High-voltage p-channel FET based on III-nitride heterostructures

1. A Group III nitride semiconductor device comprising:

a first layer of a first polar undoped Group III nitride material grown on an undoped substrate material; and

a second layer of an undoped second polar Group III nitride material epitaxially grown on the first layer of the first polar undoped Group III nitride material;

wherein a difference between a normal component of a polarization of the second layer of the undoped second polar Group III nitride material and the first layer of the first polar undoped Group III nitride material is negative; and wherein there is an energy band offset between valence bands of the first polar undoped Group III nitride material and the undoped second polar Group III nitride material;

a 2D hole gas at a heterojunction between the first layer of the first polar undoped Group III nitride material and the second layer of the undoped second polar Group III nitride material;

composition and materials of the first layer of the first polar undoped Group III nitride material and the second layer of the undoped second polar Group III nitride material selected such that the difference between a normal component of a polarization of the second layer of the undoped second polar Group III nitride material and the first layer of the first polar undoped Group III nitride material is negative and an energy band offset exists between valence bands of the first polar undoped Group III nitride material and the undoped second polar Group III nitride material, thereby causing formation the 2D hole gas at the heterojunction between the first layer of the first polar undoped Group III nitride material and the second layer of the undoped second polar Group III nitride material ;

a first slab of p-doped third polar Group III nitride material disposed on the second layer of the undoped second polar Group III nitride material;

a second slab of p-doped third polar Group III nitride material disposed on the second layer of the undoped second polar Group III nitride material; the second slab of p-doped third polar Group III nitride material being spaced apart from the first slab of p-doped third polar Group III nitride material;

a first electrically conductive contact disposed over a portion of the first slab of p-doped third polar Group III nitride material;

a second electrically conductive contact disposed over a portion of the second slab of p-doped third polar Group III nitride material; and,

a third electrically conductive contact disposed over a surface of the second layer of the undoped second polar Group III nitride material, the surface being located between the first slab of p-doped third polar Group III nitride material and the second slab of p-doped third polar Group III nitride material and opposite a surface of the first layer of the first polar undoped Group III nitride material on which the second layer of the undoped second polar Group III nitride material is grown; the third electrically conductive contact being disposed away from the first and second electrically conductive contacts.

2. The Group III nitride semiconductor device of claim 1 , wherein the first polar undoped Group III nitride material is undoped metal-polar AlN and the undoped second polar Group III nitride material is undoped metal-polar GaN.

3. The Group III nitride semiconductor device of claim 1 , wherein the undoped substrate material is one of Sapphire, c-plane Sapphire, undoped bulk single crystal polar AlN, silicon carbide, Si-face silicon carbide or silicon.

4. The Group III nitride semiconductor device of claim 1 , wherein a 2D electron gas is not present.

5. The Group III nitride semiconductor device of claim 1 , wherein the 2D hole gas has a sheet density based upon a thickness of the second layer.

6. The Group III nitride semiconductor device of claim 1 , wherein the first polar undoped Group III nitride material is undoped metal-polar AlN and the second polar Group III nitride material is one of undoped metal-polar In x Ga 1-x N or Al x Ga 1-x N where x is a number less than 1 and greater than 0.

7. The Group III nitride semiconductor device of claim 1 , wherein the first polar undoped Group III nitride material is undoped metal-polar Al x Ga 1-x N and the second polar Group III nitride material is one of undoped metal-polar GaN or In x Ga 1-x N where x is a number less than 1 and greater than 0.

8. The Group III nitride semiconductor device of claim 1 , wherein the first polar undoped Group III nitride material is undoped metal-polar Al x In y Ga (1−(x+y)) N where x and y are numbers less than 1 and greater than 0, a sum of x and y being less than 1, and the second polar Group III nitride material is undoped metal-polar GaN.

9. The Group III nitride semiconductor device of claim 1 , wherein a valence band edge of the undoped second polar Group III nitride material is more positive in energy than a valence band edge of the undoped first polar Group III nitride material.

10. The Group III nitride semiconductor device of claim 1 , wherein the first polar undoped Group III nitride material is undoped metal-polar AN and the undoped second polar Group III nitride material is undoped metal-polar GaN.

11. The Group III nitride semiconductor device of claim 10 , wherein the third polar Group III nitride material is metal-polar In x Ga 1-x N where x is a number less than 1 and greater than 0.

12. The Group III nitride semiconductor device of claim 10 , wherein the third polar Group III nitride material is metal-polar GaN.

13. The Group III nitride semiconductor device of claim 1 , wherein the first polar undoped Group III nitride material is undoped N-polar GaN and the second polar undoped Group III nitride material is undoped N-polar MN.

14. The Group III nitride semiconductor device of claim 1 , wherein the third electrically conductive contact is disposed away from the first slab of p-doped third polar Group III nitride material and the second slab of p-doped third polar Group III nitride material.

15. The Group III nitride semiconductor device of claim 1 , further comprising an insulating layer disposed on a section of each one of first slab of p-doped third polar Group III nitride material and the second slab of p-doped third polar Group III nitride material that is not covered by the first electrically conductive contact and the second electrically conductive contact, disposed on a sidewall of the first slab of p-doped third polar Group III nitride material and an opposing sidewall of the second slab of p-doped third polar Group III nitride material, and disposed on the surface of the second layer of the undoped second polar Group III nitride material, the surface being located between the first slab of p-doped third polar Group III nitride material and the second slab of p-doped third polar Group III nitride material;

the third electrically conductive contact being disposed over the insulating layer; the third electrically conductive contact being disposed away from the first and second electrically conductive contacts.

16. The Group III nitride semiconductor device of claim 1 , wherein the second layer of the undoped second polar Group III nitride material has an indentation extending from a first surface on which the first slab of p-doped third polar Group III nitride material and the second slab of p-doped third polar Group III nitride material are disposed to a second surface disposed between the first surface and a surface in contact with the first layer of a first polar undoped Group III nitride material; the indentation disposed between the first and second slabs of p-doped second polar Group III nitride material; and

wherein the third electrically conductive contact substantially fills the indentation in the second layer of the undoped second polar Group III nitride material.

17. The Group III nitride semiconductor device of claim 16 , wherein the third electrically conductive contact is disposed away from the first slab of p-doped third polar Group III nitride material and the second slab of p-doped third polar Group III nitride material.

18. The Group III nitride semiconductor device of claim 16 , wherein the third electrically conductive contact is disposed in contact with the first slab of p-doped third polar Group III nitride material and the second slab of p-doped third polar Group III nitride material.

19. The Group III nitride semiconductor device of claim 1 , wherein the second layer of the undoped second polar Group III nitride material has an indentation extending from a first surface on which the first slab of p-doped third polar Group III nitride material and the second slab of p-doped third polar Group III nitride material are disposed to a second surface disposed between the first surface and a surface in contact with the first layer of a first polar undoped Group III nitride material; the indentation disposed between the first and second slabs of p-doped second polar Group III nitride material;

wherein the Group III nitride semiconductor device further comprises an insulating layer disposed on a section of each one of first slab of p-doped third polar Group III nitride material and the second slab of p-doped third polar Group III nitride material that is not covered by the first electrically conductive contact and the second electrically conductive contact, disposed on a sidewall of the first slab of p-doped third polar Group III nitride material and an opposing sidewall of the second slab of p-doped third polar Group III nitride material, and disposed on bottom and sidewall surfaces of the indentation;

the third electrically conductive contact being disposed over the insulating layer; the third electrically conductive contact being disposed away from the first and second electrically conductive contacts.

20. The Group III nitride semiconductor device of claim 19 , wherein the insulating layer is also disposed over a sidewall of the first electrically conductive contact that is opposite a sidewall of the second electrically conductive contact, over a portion of a surface of the first electrically conductive contact that is opposite a surface disposed on the first slab of p-doped third polar Group III nitride material; the portion extending from the sidewall of the first electrically conductive contact that is opposite a sidewall of the second electrically conductive contact, over the sidewall of the second electrically conductive contact that is opposite the sidewall of the first electrically conductive contact, and over a portion of a surface of the second electrically conductive contact that is opposite a surface disposed on the second slab of p-doped third polar Group III nitride material; the portion extending from the sidewall of the second electrically conductive contact that is opposite a sidewall of the first electrically conductive contact; and,

wherein the third electrically conductive contact being disposed over at least a portion of the insulating layer.

21. The Group III nitride semiconductor device of claim 1 , wherein the second layer of the undoped second polar Group III nitride material has an indentation extending from a first surface on which the first slab of p-doped third polar Group III nitride material and the second slab of p-doped third polar Group III nitride material are disposed to a second surface disposed between the first surface and a surface in contact with the first layer of a first polar undoped Group III nitride material; the indentation disposed away from the first and second slabs of p-doped second polar Group III nitride material;

wherein the Group III nitride semiconductor device further comprises an insulating layer disposed on a section of a first surface of the second layer of the undoped second polar Group III nitride material on which the second layer of the undoped second polar Group III nitride material is not covered by the first slab of p-doped third polar Group III nitride material and the second slab of p-doped third polar Group III nitride material, disposed on surfaces of the indentation;

the third electrically conductive contact being disposed over the insulating layer; the third electrically conductive contact being disposed away from the first and second electrically conductive contacts.

22. The Group III nitride semiconductor device of claim 21 , wherein the insulating layer is also disposed over a sidewall of first slab of p-doped third polar Group III nitride material that is opposite a sidewall of the second slab of p-doped third polar Group III nitride material, over a sidewall of the first electrically conductive contact that is opposite a sidewall of the second electrically conductive contact, over a portion of a surface of the first electrically conductive contact that is opposite a surface disposed on the first slab of p-doped third polar Group III nitride material, the portion extending from the sidewall of the first electrically conductive contact that is opposite a sidewall of the second conductive contact, over the sidewall of the second slab of p-doped third polar Group III nitride material that is opposite the sidewall of the first slab of p-doped third polar Group III nitride material, over the sidewall of the second electrically conductive contact that is opposite the sidewall of the first electrically conductive contact, and over a portion of a surface of the second electrically conductive contact that is opposite a surface disposed on the second slab of p-doped third polar Group III nitride material, the portion extending from the sidewall of the second electrically conductive contact that is opposite the sidewall of the first conductive contact; and,

wherein the third electrically conductive contact being disposed over at least a portion of the insulating layer.

23. The Group III nitride semiconductor device of claim 1 wherein the undoped substrate material, the first layer of a first polar undoped Group III nitride material grown on the undoped substrate material, and the undoped second polar Group III nitride material extend beyond the Group III nitride semiconductor device, thereby providing a platform for growing other semiconductor device;

at least one other semiconductor device being grown on the platform.

24. The Group III nitride semiconductor device of claim 23 wherein the at least one other semiconductor device is an nFET selected from one of a MOSFET, MESFET, a JFET, or a HEMT.

25. The Group III nitride semiconductor device of claim 24 wherein the nFET includes a 2D electron gas.