Advanced electronic device structures using semiconductor structures and superlattices

1. A semiconductor structure comprising:

a p-type superlattice region;

an i-type superlattice region; and

an n-type superlattice region;

wherein:

at least one of the p-type superlattice region, the i-type superlattice region and the n-type superlattice region comprises a plurality of unit cells exhibiting a monotonic change in average composition along a growth axis from a first average composition corresponding to a first wider band gap (WBG) material to a second average composition corresponding to a first narrower band gap (NBG) material, or from a third average composition corresponding to a second NBG material to a fourth average composition corresponding to a second WBG material, with no abrupt changes in polarization at interfaces between each region.

2. The semiconductor structure of claim 1 , further comprising a p-type GaN region adjacent the p-type superlattice region.

3. The semiconductor structure of claim 1 , wherein the p-type superlattice region comprises:

a cation-polar crystal structure and the monotonic change in average composition of the unit cells changes monotonically from the first average composition to the second average composition along the growth axis; or

an anion-polar crystal structure and the monotonic change in average composition of the unit cells changes monotonically from the third average composition to the fourth average composition along the growth axis.

4. The semiconductor structure of claim 3 , wherein:

the anion-polar crystal structure is a nitrogen-polar crystal structure or an oxygen-polar crystal structure; and

the cation-polar crystal structure is a metal-polar crystal structure.

5. The semiconductor structure of claim 1 , wherein the n-type superlattice region comprises:

a cation-polar crystal structure and the monotonic change in average composition of the unit cells changes monotonically from the third average composition to the fourth average composition along the growth axis; or

an anion-polar crystal structure and the monotonic change in average composition of the unit cells changes monotonically from the first average composition to the second average composition along the growth axis.

6. The semiconductor structure of claim 5 , wherein:

the cation-polar crystal structure is a metal-polar crystal structure; and

the anion-polar crystal structure is a nitrogen-polar crystal structure or an oxygen-polar crystal structure.

7. The semiconductor structure of claim 1 , wherein the monotonic change in average composition of the unit cells comprises a changes in a stepwise manner along the growth axis.

8. A semiconductor structure comprising:

a p-type superlattice region;

an i-type superlattice region; and

an n-type superlattice region;

wherein:

the p-type superlattice region is adjacent to the i-type superlattice region;

the i-type superlattice region is adjacent to the n-type superlattice region; and

at least one of the p-type superlattice region, the i-type superlattice region and the n-type superlattice region comprises a semiconductor superlattice with a plurality of unit cells each comprising at least two distinct layers formed of a substantially single crystal semiconductor, the semiconductor superlattice having a polar crystal structure with a growth axis being substantially parallel to a spontaneous polarization axis of the polar crystal structure, a monotonically changing average composition of the unit cells of the semiconductor superlattice exhibiting a monotonic change from a first average composition corresponding to a first wider band gap (WBG) material to a second average composition corresponding to a first narrower band gap (NBG) material, or from a third average composition corresponding to a second NBG material to a fourth average composition corresponding to a second WBG material, such that there are no abrupt changes in polarization at interfaces between each region.

9. The semiconductor structure of claim 8 , further comprising a p-type GaN region adjacent the p-type superlattice region.

10. A light emitting diode (LED) comprising the semiconductor structure of claim 8 , and further comprising:

a substrate; and

a buffer layer contiguous with the substrate and contiguous with the semiconductor structure of claim 8 , wherein the buffer layer comprises a superlattice.

11. The semiconductor structure of claim 8 , wherein:

the monotonic change in composition from the first wider band gap (WBG) material to the first narrower band gap (NBG) material or from the second NBG material to the second WBG material along the growth axis induces a p-type or n-type conductivity.

12. The semiconductor structure of claim 8 , further comprising:

a substrate; and

a buffer or dislocation filter region contiguous with the substrate;

wherein:

the n-type superlattice region is contiguous with the buffer or dislocation filter region;

the n-type superlattice region comprises a wider average bandgap than the i-type superlattice region; and

the substrate comprises a wider bandgap than the i-type superlattice region.

13. A light emitting diode (LED) comprising the semiconductor structure of claim 12 , wherein light is emitted from the i-type superlattice region and the light passes through the n-type superlattice region before being emitted from the LED.

14. The semiconductor structure of claim 8 , further comprising:

a substrate; and

a buffer or dislocation filter region contiguous with the substrate;

wherein:

the p-type superlattice region is contiguous with the buffer or dislocation filter region;

the p-type superlattice region comprises a wider average bandgap than the i-type superlattice region;

and the substrate comprises a wider bandgap than the i-type superlattice region.

15. A light emitting diode (LED) comprising the semiconductor structure of claim 14 , wherein light is emitted from the i-type superlattice region and the light passes through the p-type superlattice region before being emitted from the LED.