Semiconductor device and method for fabricating the same
A capacitor includes: a plurality of bottom electrodes; a dielectric layer formed over the bottom electrodes; and a top electrode formed over the dielectric layer, wherein the top electrode includes a carbon-containing material and a germanium-containing material that fill a gap between the bottom electrodes.
1. A capacitor, comprising:
a plurality of bottom electrodes;
a supporter for supporting outer walls of the bottom electrodes;
a dielectric layer formed over the bottom electrodes and the supporter; and
a top electrode formed over the dielectric layer,
wherein the top electrode includes:
a carbon-containing material formed on the dielectric layer; and
a germanium-containing material formed on the carbon-containing material and filling gaps between the bottom electrodes on the carbon-containing material,
wherein an upper surface of the supporter is disposed at a lower level than upper surfaces of the bottom electrodes.
2. The capacitor of claim 1 , wherein the carbon-containing material includes silicon carbide.
3. The capacitor of claim 1 , wherein the germanium-containing material includes silicon germanium.
4. The capacitor of claim 1 , wherein the top electrode further includes a metal or metal-containing material over the germanium-containing material.
5. The capacitor of claim 1 , wherein the supporter includes silicon nitride or silicon carbon nitride (Si—C—N).
6. The capacitor of claim 1 , wherein the top electrode includes an alloy of the carbon-containing material and the germanium-containing material.
7. The capacitor of claim 1 , wherein the top electrode includes a stack of the carbon-containing material and the germanium-containing material.
8. The capacitor of claim 1 , wherein the carbon-containing material includes Si—C—Ge, and the germanium-containing material includes SiGe.
9. The capacitor of claim 1 , wherein the germanium-containing material includes boron-doped silicon germanium.
10. The capacitor of claim 1 , wherein each of the bottom electrodes has a pillar shape.
11. The capacitor of claim 1 , wherein the dielectric layer includes a zirconium oxide-based material or a hafnium oxide-based material.
12. The capacitor of claim 1 , wherein the carbon-containing material and the germanium-containing material completely fills the gaps between the bottom electrodes.
13. The capacitor of claim 1 , wherein the carbon-containing material is formed conformally on the dielectric layer, and the germanium-containing material completely fills the gaps between the bottom electrodes on the carbon-containing material.