Memory system
According to one embodiment, a memory system includes a semiconductor memory and a controller. The semiconductor memory includes blocks each containing memory cells. The controller is configured to instruct the semiconductor memory to execute a first operation and a second operation. In the first operation and the second operation, the semiconductor memory selects at least one of the blocks, and applies at least one voltage to all memory cells contained in said selected blocks. A number of blocks to which said voltage is applied per unit time in the second operation is larger than that in the first operation.
1. A memory system comprising:
a nonvolatile memory including a plurality of blocks, each of the plurality of blocks including a plurality of word lines; and
a controller configured to instruct the nonvolatile memory to execute a dummy read operation on a first group of blocks within a first period, wherein,
in the dummy read operation, at least one block of the first group of blocks is selected, and a voltage higher than a ground voltage is applied to each word line of the plurality of word lines included in the selected block, and
the controller is further configured to change, on the basis of a remaining time of the first period, a rate indicating the number of blocks to be selected per unit time.
2. The memory system according to claim 1 , wherein
in the dummy read operation, a memory cell transistor connected to a word line to which the voltage higher than the ground voltage is applied turns on.
3. The memory system according to claim 2 , wherein
in the dummy read operation, data stored in the memory cell transistor that turns on is not output to the controller.
4. The memory system according to claim 1 , wherein
the controller is further configured to manage an address conversion table to convert a logical address associated with data stored in the nonvolatile memory into a physical address of the nonvolatile memory, and
each block of the first group of blocks stores at least one piece of valid user data or the address conversion table.
5. The memory system according to claim 4 , wherein
the controller is configured to instruct the nonvolatile memory to execute the dummy read operation on the first group of blocks at a startup of the memory system.
6. The memory system according to claim 1 , wherein
the dummy read operation includes a first dummy read operation and a second dummy read operation, and the number of blocks selected in one execution of the first dummy read operation is smaller than the number of blocks selected in one execution of the second dummy read operation.
7. The memory system according to claim 1 , wherein
the controller is configured to determine the first period on the basis of temperature of the memory system.
8. A memory system comprising:
a semiconductor memory including a plurality of blocks, each of the plurality of blocks including a plurality of word lines and a plurality of memory cells, each of the plurality of word lines connecting at least one of the plurality of memory cells; and
a controller configured to:
instruct the semiconductor memory to perform a first operation after a power begins to be supplied to the memory system and before data is read out from a first block to the controller, wherein, in the first operation, the semiconductor memory applies a voltage to a first word line of the first block and does not output, to the controller, data stored in a memory cell connected to the first word line; and
instruct the semiconductor memory to perform the first operation again within a first period after instructing the semiconductor memory to perform the first operation.
9. The memory system according to claim 8 , wherein
within the first period after the first operation is instructed to the semiconductor memory, the first word line is in a first state in which a voltage of the first word line while the first block is not selected as an access target is higher than a first voltage.
10. The memory system according to claim 8 , wherein
the plurality of memory cells are deployed in three dimensions, and
the first word line is located at the outermost of the first block.
11. The memory system according to claim 8 , wherein
the controller is further configured to:
upon instructing the semiconductor memory predetermined times to execute one of a read operation, a write operation, and an erase operation to a second block, instruct the semiconductor memory to perform the first operation to a third block, the third block being a block within a group that includes the second block, the third block being different from the second block.
12. The memory system according to claim 8 , wherein
the controller is further configured to instruct the semiconductor memory to perform the first operation in a case where reading data from the first word line to the controller is required while the first word line is in a second state, the second state being a state in which a voltage of the first word line while the first block is not selected as an access target is lower than a second voltage, before instructing the semiconductor memory to read data from the first word line.
13. A memory system comprising:
a nonvolatile memory including a plurality of blocks, each of the plurality of blocks including a plurality of word lines; and
a controller configured to instruct the nonvolatile memory to execute a dummy read operation on a first group of blocks within a first period, wherein,
in the dummy read operation, at least one block of the first group of blocks is selected, and a voltage higher than a ground voltage is applied to each word line of the plurality of word lines included in the selected block, and
the dummy read operation includes a first dummy read operation and a second dummy read operation, and the number of blocks selected in one execution of the first dummy read operation is smaller than the number of blocks selected in one execution of the second dummy read operation.
14. The memory system according to claim 13 , wherein
in the dummy read operation, a memory cell transistor connected to a word line to which the voltage higher than the ground voltage is applied turns on, and
in the dummy read operation, data stored in the memory cell transistor that turns on is not output to the controller.
15. The memory system according to claim 13 , wherein
the controller is further configured to manage an address conversion table to convert a logical address associated with data stored in the nonvolatile memory into a physical address of the nonvolatile memory,
each block of the first group of blocks stores at least one piece of valid user data or the address conversion table, and
the controller is configured to instruct the nonvolatile memory to execute the dummy read operation on the first group of blocks at a startup of the memory system.
16. The memory system according to claim 13 , wherein
the controller is configured to determine the first period on the basis of temperature of the memory system.
17. The memory system according to claim 13 , wherein
the controller is further configured to change, on the basis of a remaining time of the first period, a rate indicating the number of blocks to be selected per unit time.
18. The memory system according to claim 13 , wherein
a processing time for one execution of the first dummy read operation is shorter than a processing time for one execution of the second dummy read operation.
19. The memory system according to claim 18 , wherein
in the second dummy read operation, two or more blocks are selected and the voltage higher than the ground voltage is applied concurrently to each word line of the plurality of word lines included in the selected blocks.
20. The memory system according to claim 19 , wherein
the controller is further configured to change, on the basis of a remaining time of the first period, a rate indicating the number of blocks to be selected per unit time by changing a ratio of the number of the first dummy read operations to the number of the second dummy read operations to be executed in the first period.