Methods and apparatus for NAND flash memory

1. A method for programming a NAND flash memory, wherein the NAND flash memory comprises a memory array having strings of memory cells that are accessed using bit lines and word lines, the method comprising:

setting programming conditions on the word lines to set up programming of multiple memory cells associated with multiple bit lines;

sequentially enabling bit line select gates to load data from a page buffer to the multiple bit lines of the memory, wherein after each bit line is loaded with selected data an associated bit line select gate is disabled so that the selected data is maintained in the bit line using bit line capacitance; and

waiting for a programming interval to complete after all the bit lines are loaded with data to program the multiple memory cells associated with the multiple bit lines, wherein at least a portion of the multiple memory cells are programmed simultaneously.

2. The method of claim 1 , wherein before the operation of setting, performing an operation of enabling bit line select gates to load a precharge voltage to multiple bit lines of the memory, and after the operation of setting, performing an operation of disabling the bit line select gates to store the precharge voltage in the multiple bit lines using a bit line capacitance associated with each bit line.

3. A method for programming a NAND flash memory, wherein the NAND flash memory comprises a memory array having strings of memory cells that are accessed using bit lines and word lines, the method comprising:

sequentially enabling the bit line select gates to load data from a page buffer to multiple bit lines of the memory, wherein after each bit line is loaded with selected data an associated bit line select gate is disabled so that the selected data is maintained in the bit line using the bit line capacitance;

setting programming conditions on the word lines to set up programming of multiple memory cells associated with the multiple bit lines; and

waiting for a programming interval to complete after the programming conditions are set on the word lines to program the selected memory cells associated with the multiple bit lines, wherein at least a portion of the bit lines are programmed simultaneously.

4. A method for reading a NAND flash memory, wherein the NAND flash memory comprises a memory array having strings of memory cells that are accessed using bit lines and word lines, the method comprising:

setting reading conditions on the word lines and source lines to set up reading of multiple memory cells associated with multiple bit lines;

enabling bit line select gates to load a precharge voltage to the multiple bit lines of the memory, and after the operation of enabling, disabling the bit line select gates to store the precharge voltage in the multiple bit lines using a bit line capacitance associated with each bit line, wherein the precharging voltage is different from a source line voltage;

waiting for a discharging interval to complete, after all the selected memory cells are in an on-state, to discharge the associated bit lines to a predetermined voltage or current level, wherein at least a portion of the bit lines are discharged simultaneously; and

sequentially enabling the bit line select gates to couple the associated bit lines to a sensing circuit, that performs sensing of voltage or current level of the bit lines to determine data; and

latching the data into a data latch; and

repeating the enabling and latching for the multiple bit lines until the data of the multiple bit lines are latched.