Wavelength converting material, and light emitting device
A wavelength converting material includes a luminous core and a first protective layer. The first protective layer covers the luminous core, in which the first protective layer includes silicon dioxide, and in silicon atoms of the silicon dioxide, the silicon atom of the zeroth configuration (Q 0 ) does not connect with any siloxy group, and the silicon atom of the first configuration (Q 1 ) connects with one siloxy group, and the silicon atom of the second configuration (Q 2 ) connects with two siloxy groups, and the silicon atom of the third configuration (Q 3 ) connects with three siloxy groups, and the silicon atom of the fourth configuration (Q 4 ) connects with four siloxy groups, in which a total amount of the silicon atoms of the third configuration and the fourth configuration is greater than a total amount of the silicon atoms of the zeroth configuration, the first configuration and the second configuration.
1. A wavelength converting material, comprising:
a luminous core; and
a first protective layer covering the luminous core, wherein the first protective layer comprises silicon dioxide, and in a plurality of silicon atoms of the silicon dioxide, each of the silicon atoms is one of a zeroth configuration) (Q 0 ), a first configuration (Q 1 ), a second configuration (Q 2 ), a third configuration (Q 3 ) and a fourth configuration (Q 4 ), and the silicon atom of the zeroth configuration (Q 0 ) does not connect with any siloxy group, and the silicon atom of the first configuration (Q 1 ) connects with one siloxy group, and the silicon atom of the second configuration (Q 2 ) connects with two siloxy groups, and the silicon atom of the third configuration (Q 3 ) connects with three siloxy groups, and the silicon atom of the fourth configuration (Q 4 ) connects with four siloxy groups, wherein a total amount of the silicon atoms of the third configuration (Q 3 ) and the fourth configuration (Q 4 ) is greater than a total amount of the silicon atoms of the zeroth configuration (Q 0 ), the first configuration (Q 1 ) and the second configuration (Q 2 ).
2. The wavelength converting material of claim 1 , wherein the total amount of the silicon atoms of the third configuration (Q 3 ) and the fourth configuration (Q 4 ) is greater than 80% based on a total amount of the silicon atoms of the silicon dioxide of 100%.
3. The wavelength converting material of claim 1 , wherein in a 29 Si nuclear magnetic resonance spectrum of the wavelength converting material, there are a peak of the third configuration (Q 3 ) in a range of from −95 to −105 ppm and a peak of the fourth configuration (Q 4 ) in a range of from −105 to −115 ppm.
4. The wavelength converting material of claim 1 , wherein the luminous core comprises a quantum dot material.
5. The wavelength converting material of claim 4 , wherein a surface of the quantum dot material is subjected to a modification treatment, and the modification treatment comprises a ligand exchange treatment, a microemulsification treatment, an organic material coating, an inorganic material coating, an embedding into pores of mesoporous particles or a combination thereof.
6. The wavelength converting material of claim 5 , wherein the organic material used for coating comprises poly(methyl methacrylate) (PMMA), polyethylene terephthalate (PET), polyethylene naphthalate (PEN), polystyrene (PS), polyvinylidene difluoride (PVDF), polyvinyl acetate (PVAC), polypropylene (PP), polyamide (PA), polycarbonate (PC), polyimide (PI), epoxy or silicone.
7. The wavelength converting material of claim 5 , wherein the inorganic material used for coating comprises nitride, metal oxide, silicon oxide or a combination thereof.
8. The wavelength converting material of claim 1 , wherein the luminous core comprises a phosphor powder material.
9. The wavelength converting material of claim 8 , wherein a surface of the phosphor powder material is subjected to a modification treatment, and the modification treatment comprises an organic material coating, an inorganic material coating or a combination thereof.
10. The wavelength converting material of claim 9 , wherein the organic material used for coating comprises poly(methyl methacrylate) (PMMA), polyethylene terephthalate (PET), polyethylene naphthalate (PEN), polystyrene (PS), polyvinylidene difluoride (PVDF), polyvinyl acetate (PVAC), polypropylene (PP), polyamide (PA), polycarbonate (PC), polyimide (PI), epoxy or silicone.
11. The wavelength converting material of claim 9 , wherein the inorganic material used for coating comprises nitride, metal oxide, silicon oxide or a combination thereof.
12. A light emitting device comprising:
a solid state semiconductor light emitting element configured to emit a first light; and
a wavelength converting material, comprising:
a luminous core; and
a first protective layer covering the luminous core, wherein the first protective layer comprises silicon dioxide, and in a plurality of silicon atoms of the silicon dioxide, each of the silicon atoms is one of a zeroth configuration (Q 0 ), a first configuration (Q 1 ), a second configuration (Q 2 ), a third configuration (Q 3 ) and a fourth configuration (Q 4 ), and the silicon atom of the zeroth configuration (Q 0 ) does not connect with any siloxy group, and the silicon atom of the first configuration (Q 1 ) connects with one siloxy group, and the silicon atom of the second configuration (Q 2 ) connects with two siloxy groups, and the silicon atom of the third configuration (Q 3 ) connects with three siloxy groups, and the silicon atom of the fourth configuration (Q 4 ) connects with four siloxy groups, wherein a total amount of the silicon atoms of the third configuration (Q 3 ) and the fourth configuration (Q 4 ) is greater than a total amount of the silicon atoms of the zeroth configuration (Q 0 ), the first configuration (Q 1 ) and the second configuration (Q 2 ), wherein the wavelength converting material absorbs a portion of the first light and emits a second light with a wavelength different from a wavelength of the first light.
13. The light emitting device of claim 12 , wherein the total amount of the silicon atoms of the third configuration (Q 3 ) and the fourth configuration (Q 4 ) is greater than 80% based on a total amount of the silicon atoms of the silicon dioxide of 100%.
14. The light emitting device of claim 12 , wherein in a 29 Si nuclear magnetic resonance spectrum of the wavelength converting material, there are a peak of the third configuration (Q 3 ) in a range of from −95 to −105 ppm and a peak of the fourth configuration (Q 4 ) in a range of from −105 to −115 ppm.
15. The light emitting device of claim 12 , wherein the luminous core comprises a quantum dot material.
16. The light emitting device of claim 15 , wherein a surface of the quantum dot material is subjected to a modification treatment, and the modification treatment comprises a ligand exchange treatment, a microemulsification treatment, an organic material coating, an inorganic material coating, an embedding into pores of mesoporous particles or a combination thereof.
17. The light emitting device of claim 12 , wherein the luminous core comprises a phosphor powder material.
18. The light emitting device of claim 17 , wherein a surface of the phosphor powder material is subjected to a modification treatment, and the modification treatment comprises an organic material coating, an inorganic material coating or a combination thereof.
19. The light emitting device of claim 18 , wherein the organic material used for coating comprises poly(methyl methacrylate) (PMMA), polyethylene terephthalate (PET), polyethylene naphthalate (PEN), polystyrene (PS), polyvinylidene difluoride (PVDF), polyvinyl acetate (PVAC), polypropylene (PP), polyamide (PA), polycarbonate (PC), polyimide (PI), epoxy or silicone.
20. The light emitting device of claim 18 , wherein the inorganic material used for coating comprises nitride, metal oxide, silicon oxide or a combination thereof.