Solid-state image sensor and imaging device

1. A solid-state image sensor, comprising:

a pixel array including pixel cells arranged in a matrix,

wherein each of the pixel cells includes:

an avalanche photodiode having a first mode in which a charge amount of charges approximately proportional to the number of photons which cause photoelectric conversion is collected in a cathode of the avalanche photodiode when photons enter the avalanche photodiode under application of a first bias, and a second mode in which a saturated amount of charges is collected in the cathode when photons enter the avalanche photodiode under application of a second bias having a larger potential difference from a potential difference of the first bias and one photon causes photoelectric conversion;

a floating diffusion which accumulates charges;

a transfer transistor which connects the cathode of the avalanche photodiode and the floating diffusion;

a first reset transistor for resetting charges collected in the cathode of the avalanche photodiode;

a second reset transistor for resetting charges accumulated in the floating diffusion;

an amplification transistor for converting a charge amount of the charges accumulated in the floating diffusion into a voltage;

a memory which accumulates charges; and

a count transistor which connects the floating diffusion and the memory,

wherein, in a case where the avalanche photodiode is in the second mode, a potential barrier between a source and a drain of the transfer transistor when the transfer transistor is turned on is higher than a potential level of the cathode of the avalanche photodiode, the transfer transistor being turned on for redistributing the charges accumulated in the cathode to the cathode and to the floating diffusion.

2. The solid-state image sensor according to claim 1 ,

wherein the memory has a capacity that is at least five times a capacity of the floating diffusion.

3. The solid-state image sensor according to claim 1 ,

wherein the memory is a capacitor having a laminate structure.

4. The solid-state image sensor according to claim 1 ,

wherein the memory is a capacitor including an electrode, a semiconductor layer, and an insulating layer disposed between the electrode and the semiconductor layer.

5. The solid-state image sensor according to claim 1 ,

wherein the memory is a capacitor including a first electrode, a second electrode, and an insulating layer disposed between the first electrode and the second electrode.

6. The solid-state image sensor according to claim 5 ,

wherein the avalanche photodiode, the floating diffusion, the transfer transistor, the first reset transistor, the second reset transistor, and the amplification transistor are disposed in a semiconductor substrate,

the capacitor includes the first electrode and the second electrode facing each other, and the insulating layer interposed between the first electrode and the second electrode,

the first electrode and the second electrode are disposed in a wiring layer region located vertically above a main flat surface of the semiconductor substrate, and

first electrodes in the pixel cells are connected to each other without a via.

7. The solid-state image sensor according to claim 6 ,

wherein the first electrode is grounded at a predetermined potential through a via outside the pixel array.

8. The solid-state image sensor according to claim 1 ,

wherein the first reset transistor has a threshold voltage equal to or lower than a threshold voltage of the transfer transistor.

9. The solid-state image sensor according to claim 1 ,

wherein a potential barrier between a source and a drain of the first reset transistor under application of a first voltage to a gate of the first reset transistor is lower than a potential barrier between a source and a drain of the transfer transistor under application of a second voltage to a gate of the transfer transistor.

10. The solid-state image sensor according to claim 8 ,

wherein among the charges collected in the cathode of the avalanche photodiode, at least part of charges having a potential higher than the potential barrier between the source and the drain of the first reset transistor is transferred to the drain of the first reset transistor.

11. The solid-state image sensor according to claim 1 ,

wherein in an operation in the second mode, the potential barrier between the source and the drain under application of a voltage to the gate of the transfer transistor is higher than a potential of the floating diffusion initialized by the second reset transistor.

12. The solid-state image sensor according to claim 1 ,

wherein in an operation in the first mode, the potential barrier between the source and the drain under application of a voltage to the gate of the transfer transistor is equal to or lower than the potential of the floating diffusion initialized by the second reset transistor.

13. An imaging device, comprising:

the solid-state image sensor according to claim 1 ; and

a signal processing circuit which sets a bias to be applied to the avalanche photodiode at one of the first bias and the second bias based on a signal output from the solid-state image sensor.