IP Library Granted Patent US 11,828,546
Granted Patent B2
US 11,828,546 · App. 16/690,507 · Granted Nov 28, 2023

Heat exchange compound module

Inventors: Peter Dietrich (Rödermark, DE); Ryan Persons (Newtown Square, PA)
Assignee: HERAEUS DEUTSCHLAND GMBH & CO. KG
F28F3/022F28F21/04F28F21/084F28F21/085
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Quick Facts
Patent No.
US 11,828,546
App. No.
16/690,507
Granted
Nov 28, 2023
Kind
B2
Abstract

The disclosure relates to a heat exchange compound module and a manufacturing method for a heat exchange compound module. The heat exchange compound module comprises a metal-ceramic substrate and a heat exchange structure. The metal-ceramic substrate comprises an outer layer of a first metallic material. The heat exchange structure is made of a second metallic material and is connected to the outer layer of the metal-ceramic substrate only by an eutectic bond between the first metallic material and the second metallic material.

Claims (24)

1. A heat exchange compound module, comprising:

a metal-ceramic substrate comprising an outer layer of a first metallic material, and

a heat exchange structure made of a second metallic material, the second metallic material comprising 95 to 99.99% aluminum,

wherein the heat exchange structure is connected to the outer layer of the metal-ceramic substrate only by a eutectic bond between the first metallic material and the second metallic material, and wherein the eutectic bond consists of a homogeneous mixture of the first metallic material and the second metallic material.

2. The module of claim 1 , wherein the heat exchange structure is a direct cooling device.

3. The module of claim 1 , wherein the heat exchange structure is a pin fin cooler.

4. The module of claim 3 , wherein the pin fin cooler comprises a plurality of single, non-interconnected pin fins.

5. The module of claim 1 , wherein the heat exchange structure is a heat sink.

6. The module of claim 1 , wherein the heat exchange structure is connected to the outer layer of the metal-ceramic substrate by a heat diffusion process.

7. The module of claim 1 , wherein the first metallic material comprises copper as major component.

8. The module of claim 1 , wherein the metal-ceramic substrate is a sandwich comprising the outer layer of the first metallic material as a first outer layer, followed by a ceramic core and followed by a second outer layer of a metallic material.

9. The module of claim 1 , wherein the metal-ceramic substrate comprises another outer layer of a metallic material, wherein the another outer layer is at least partly structured to form electrical contact areas.

10. The module of claim 1 , wherein the first metallic material comprises 80 to 99.9% copper.

11. A manufacturing method for a heat exchange compound module, comprising the following steps:

providing a metal-ceramic substrate comprising an outer layer of a first metallic material, applying a heat exchange structure made of a second metallic material on the metal-ceramic substrate to form a heat exchange compound module, the second metallic material comprising 95 to 99.9% aluminum, and

heating the heat exchange compound module to a eutectic temperature of the first metallic material and the second metallic material, at which the heat exchange structure connects to the outer layer of the metal-ceramic substrate only by a eutectic bond between the first metallic material and the second metallic material, wherein the eutectic bond consists of a homogeneous mixture of the first metallic material and the second metallic material.

12. The method of claim 11 , wherein the first metallic material comprises copper as a major component.

13. The method of claim 11 , wherein the eutectic temperature is in a range of 530° C. to 570° C.

14. The method of claim 11 , wherein the heating is done in an inert atmosphere.

15. The method of claim 11 , further comprising a step of applying a weight on the heat exchange compound module before heating the heat exchange compound module.

16. The method of claim 11 , wherein the heat exchange structure is a direct cooling device.

17. The method of claim 11 , wherein the heat exchange structure is a pin fin cooler.

18. The method of claim 11 , wherein the heat exchange structure is a heat sink.

19. The method of claim 11 , wherein the first metallic material comprises 80 to 99.9% copper.

Assignments (2)
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Jun 5, 2024
From: HERAEUS DEUTSCHLAND GMBH & CO. KG
To: HERAEUS ELECTRONICS GMBH & CO. KG
Reel/Frame 068409/0258 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Feb 4, 2020
From: DIETRICH, PETER; PERSONS, RYAN
To: HERAEUS DEUTSCHLAND GMBH & CO. KG
Reel/Frame 051711/0219 →