Shared three-dimensional vertical memory
In a shared three-dimensional vertical memory (3D-M V ), each horizontal address line comprises at least two regions: a lightly-doped region and a low-resistivity region. The lightly-doped region is formed around selected memory holes and shared by a plurality of low-leakage memory cells. The low-resistivity region forms a conductive network to reduce the resistance of the horizontal address line.
1. A three-dimensional vertical memory (3D-M V ), comprising:
a semiconductor substrate including a substrate circuit;
a plurality of horizontal address lines stacked above said substrate circuit;
a plurality of memory holes penetrating through said horizontal address lines;
a plurality of programmable layers covering the sidewalls of said memory holes;
a plurality of vertical address lines formed in said memory holes;
each of said horizontal address lines including at least a first region and a second region outside said first region, wherein:
said first region comprises at least a lightly-doped semiconductor material surrounding selected ones of said memory holes;
said first region has a higher resistivity than said second region; and,
a first plurality of said memory holes penetrate through said first region;
a second plurality of said memory holes penetrate through said second region.
2. The 3D-M V according to claim 1 , wherein a plurality of low-leakage memory cells are formed at the intersections between said memory holes and said first region; and, another plurality of high-leakage memory cells are formed at the intersections between said memory holes and said second region.
3. The 3D-M V according to claim 1 , wherein the intersections of said selected ones of said memory holes and said each of said horizontal address lines constitute at least two rows and at least two columns.
4. The 3D-M V according to claim 1 , wherein the intersections of said selected ones of said memory holes and said each of said horizontal address lines are not separated by said second region.
5. The 3D-M V according to claim 1 , wherein the shape of said first region is rectangular or hexagonal.
6. The 3D-M V according to claim 1 , wherein the total area of said first region is larger than said second region.
7. The 3D-M V according to claim 1 , wherein a plurality of memory cells formed at the intersections of said horizontal address lines and said vertical address lines, with the areal density of said memory cells in said first region larger than said second region.
8. The 3D-M V according to claim 1 , wherein selected one of said memory holes is in contact with both of said first and second regions.
9. The 3D-M V according to claim 1 , wherein:
said second region comprises at least a heavily-doped semiconductor material; and,
said vertical address lines comprise at least a metallic material or another heavily-doped semiconductor material with polarity opposite to said heavily-doped semiconductor material.
10. The 3D-M V according to claim 1 , wherein:
said second region comprises at least a metallic material; and,
said vertical address lines comprise at least a heavily-doped semiconductor material.
11. The 3D-M V according to claim 1 , wherein said programmable layer is one-time programmable, multiple-time programmable, or re-programmable.
12. A three-dimensional vertical memory (3D-M V ), comprising:
a semiconductor substrate including a substrate circuit;
a plurality of horizontal address lines stacked above said substrate circuit;
a plurality of memory holes penetrating through said horizontal address lines;
a plurality of programmable layers covering the sidewalls of said memory holes;
a plurality of vertical address lines formed in said memory holes;
each of said horizontal address lines including at least a first region and a second region outside said first region, wherein:
said first region comprises at least a lightly-doped semiconductor material surrounding selected ones of said memory holes;
said first region has a higher resistivity than said second region; and,
said memory holes penetrate through said first region;
none of said memory holes penetrate through said second region.
13. The 3D-M V according to claim 12 , wherein the intersections of said selected ones of said memory holes and said each of said horizontal address lines constitute at least two rows and at least two columns.
14. The 3D-M V according to claim 12 , wherein the intersections of said selected ones of said memory holes and said each of said horizontal address lines are not separated by said second region.
15. The 3D-M V according to claim 12 , wherein the shape of said first region is rectangular or hexagonal.
16. The 3D-M V according to claim 12 , wherein the total area of said first region is larger than said second region.
17. The 3D-M V according to claim 12 , wherein a plurality of memory cells formed at the intersections of said horizontal address lines and said vertical address lines, with the areal density of said memory cells in said first region larger than said second region.
18. The 3D-M V according to claim 12 , wherein:
said second region comprises at least a heavily-doped semiconductor material; and,
said vertical address lines comprise at least a metallic material or another heavily-doped semiconductor material with polarity opposite to said heavily-doped semiconductor material.
19. The 3D-M V according to claim 12 , wherein:
said second region comprises at least a metallic material; and,
said vertical address lines comprise at least a heavily-doped semiconductor material.
20. The 3D-M V according to claim 12 , wherein said programmable layer is one-time programmable, multiple-time programmable, or re-programmable.