Semiconductor device and method of manufacturing the same
A semiconductor device may include a substrate constituted of an insulator; a first conductor film provided on a part of the substrate; a semiconductor chip located on the first conductor film; and an external connection terminal joined to the substrate via a joining layer at a position separated from the first conductor film. The semiconductor chip may be a power semiconductor chip including a main electrode and a signal electrode. The main electrode may be electrically connected to the first conductor film and the signal electrode may be electrically connected to the external connection terminal.
1. A semiconductor device, comprising:
a substrate constituted of an insulator;
a first conductor film provided on a part of the substrate;
a semiconductor chip located on the first conductor film; and
an external connection terminal joined to the substrate via a joining layer at a position separated from the first conductor film,
wherein
the semiconductor chip is a power semiconductor chip comprising a main electrode and a signal electrode,
the main electrode is electrically connected to the first conductor film and the signal electrode is electrically connected to the external connection terminal, and
a part of the semiconductor chip is located on the external connection terminal and the signal electrode is joined to the external connection terminal.
2. The semiconductor device according to claim 1 , wherein a portion of the external connection terminal that is opposed to the signal electrode protrudes toward the signal electrode.
3. The semiconductor device according to claim 1 , wherein an angle of a side surface of the external connection terminal with respect to the substrate is greater than an angle of a side surface of the first conductor film with respect to the substrate.
4. The semiconductor device according to claim 1 , wherein a thickness of the first conductor film is greater than a thickness of the external connection terminal.
5. The semiconductor device according to claim 1 , wherein
the external connection terminal comprises a first section being in contact with the joining layer and a second section extending from the first section toward outside the substrate, and
a thickness of the second section is smaller than a thickness of the first section.
6. The semiconductor device according to claim 1 , wherein
the semiconductor chip is a power semiconductor chip comprising an Insulated Gate Bipolar Transistor (IGBT) structure,
the main electrode is connected to either an emitter or a collector of the IGBT structure, and
the signal electrode is connected to a gate of the IGBT structure.
7. The semiconductor device according to claim 1 , wherein
the semiconductor chip is a power semiconductor chip comprising a Metal-Oxide-Semiconductor Field-Effect Transistor (MOSFET) structure,
the main electrode is connected to either a source or a drain of the MOSFET structure, and
the signal electrode is connected to a gate of the MOSFET structure.
8. The semiconductor device according to claim 1 , wherein the substrate is a ceramic substrate.
9. The semiconductor device according to claim 1 , wherein the first conductor film is joined to the substrate via a brazing material.
10. The semiconductor device according to claim 1 , further comprising a second conductor film provided on an opposite side of the substrate with respect to the first conductor film.
11. A semiconductor device, comprising:
a substrate constituted of an insulator;
a first conductor film provided on a part of the substrate;
a semiconductor chip located on the first conductor film; and
an external connection terminal joined to the substrate via a joining layer at a position separated from the first conductor film,
wherein
the semiconductor chip is a power semiconductor chip comprising a main electrode and a signal electrode,
the main electrode is electrically connected to the first conductor film and the signal electrode is electrically connected to the external connection terminal, and
an angle of a side surface of the external connection terminal with respect to the substrate is greater than an angle of a side surface of the first conductor film with respect to the substrate.
12. A semiconductor device, comprising:
a substrate constituted of an insulator;
a first conductor film provided on a part of the substrate;
a semiconductor chip located on the first conductor film; and
an external connection terminal joined to the substrate via a joining layer at a position separated from the first conductor film,
wherein
the semiconductor chip is a power semiconductor chip comprising a main electrode and a signal electrode,
the main electrode is electrically connected to the first conductor film and the signal electrode is electrically connected to the external connection terminal,
the external connection terminal comprises a first section being in contact with the joining layer and a second section extending from the first section toward outside the substrate, and
a thickness of the second section is smaller than a thickness of the first section.