Semiconductor device and method of manufacturing the same
A semiconductor device includes a substrate constituted of an insulator, a first conductor film provided on a surface of the substrate; a semiconductor chip including a first electrode and a second electrode, the first electrode being connected to the first conductor film; and an external connection terminal including an inner end portion and an outer end portion. The inner end portion is located between the substrate and the semiconductor chip and is connected to the second electrode. The external connection terminal further includes an intermediate portion located between the inner end portion and the outer end portion and joined to the surface of the substrate. A distance between the intermediate portion of the external connection terminal and the substrate is greater than a distance between the inner end portion of the external connection terminal and the substrate.
1. A semiconductor device, comprising:
a substrate constituted of an insulator,
a first conductor film provided on a surface of the substrate;
a semiconductor chip comprising a first electrode and a second electrode, the first electrode being connected to the first conductor film; and
an external connection terminal comprising an inner end portion and an outer end portion, the inner end portion being located between the substrate and the semiconductor chip and being connected to the second electrode,
wherein
the external connection terminal further comprises an intermediate portion, the intermediate portion being located between the inner end portion and the outer end portion and being joined to the surface of the substrate, and
a distance between the intermediate portion of the external connection terminal and the substrate is greater than a distance between the inner end portion of the external connection terminal and the substrate.
2. The semiconductor device according to claim 1 , further comprising a second conductor film provided on the surface of the substrate at a location separated from the first conductor film,
wherein the intermediate portion of the external connection terminal is joined to the second conductor film.
3. The semiconductor device according to claim 2 , wherein the distance between the inner end portion of the external connection terminal and the substrate is smaller than a thickness of the second conductor film.
4. The semiconductor device according to claim 2 , wherein at least a part of the intermediate portion of the external connection terminal is located between the first conductor film and the second conductor film in a direction parallel with the substrate.
5. The semiconductor device according to claim 2 , wherein the intermediate portion of the external connection terminal is joined to the second conductor film via at least one joining layer.
6. The semiconductor device according to claim 1 , wherein the external connection terminal further comprises a transition portion located from the intermediate portion to the inner end portion, the transition portion extending toward the substrate.
7. The semiconductor device according to claim 6 , wherein at least a part of the transition portion is at least a part of the intermediate portion and is joined to the substrate.
8. The semiconductor device according to claim 1 , wherein
the external connection terminal comprises a first section with a first thickness extending along a longitudinal direction of the external connection terminal, and a second section with a second thickness extending along the longitudinal direction, the second thickness being greater than the first thickness, and
the inner end portion is located within the first section and the outer end portion is located within the second section.
9. The semiconductor device according to claim 8 , wherein
the second section of the external connection terminal is opposed to the substrate without intervention of the first conductor film therebetween, and
a distance between the second section of the external connection terminal and the substrate is smaller than a thickness of the first conductor film.
10. The semiconductor device according to claim 8 , further comprising:
a second substrate constituted of an insulator and opposed to the substrate with intervention of the semiconductor chip therebetween; and
a third conductor film provided on a surface of the second substrate and connected to a third electrode of the semiconductor chip,
wherein the second section of the external connection terminal is opposed to the second substrate without intervention of the third conductor film, and
a distance between the second section of the external connection terminal and the second substrate is smaller than a thickness of the third conductor film.
11. A method of manufacturing a semiconductor device, the method comprising:
connecting an inner end portion of an external connection terminal to a second electrode of a semiconductor chip; and
connecting a first conductor film provided on a surface of a substrate constituted of an insulator to a first electrode of the semiconductor chip and simultaneously joining the surface of the substrate to an intermediate portion located between the inner end portion and an outer end portion of the external connection terminal,
wherein
the inner end portion of the external connection terminal connected to the second electrode is located between the substrate and the semiconductor chip, and
a distance between the intermediate portion of the external connection terminal and the substrate is greater than a distance between the inner end portion of the external connection terminal and the substrate.