Semiconductor device and method for fabricating a semiconductor device
A semiconductor device includes: a carrier having a die pad and a contact; a semiconductor die having opposing first and second main sides and being attached to the die pad by a first solder joint such that the second main side faces the die pad; and a contact clip having a first contact region and a second contact region. The first contact is attached to the first main side by a second solder joint. The second contact region is attached to the contact by a third solder joint. The first contact region has a convex shape facing towards the first main side such that a distance between the first main side and the first contact region increases from a base of the convex shape towards an edge of the first contact region. The base runs along a line that is substantially perpendicular to a longitudinal axis of the contact clip.
1. A semiconductor device, comprising:
a carrier comprising a die pad and a contact;
a semiconductor die comprising a first main side and an opposing second main side, the semiconductor die being attached to the die pad by a first solder joint such that the second main side faces the die pad; and
a contact clip comprising a first contact region and a second contact region, the first contact region being attached to the first main side of the semiconductor die by a second solder joint and the second contact region being attached to the contact by a third solder joint,
wherein the first contact region has a convex shape facing towards the first main side of the semiconductor die such that a distance between the first main side and the first contact region increases from a base of the convex region towards an edge of the first contact region,
wherein the base runs along a line that runs substantially perpendicular to a longitudinal axis of the contact clip,
wherein the contact clip has a uniform width along the longitudinal axis,
wherein the line runs along the entire width.
2. The semiconductor device of claim 1 , wherein the distance monotonically increases from the base towards the edge.
3. The semiconductor device of claim 2 , wherein the distance monotonically increases continuously from the base towards the edge.
4. The semiconductor device of claim 1 , wherein the line coincides with a center axis of the semiconductor die within a margin of error of 200 μm or less.
5. The semiconductor device of claim 1 , wherein the second contact region of the contact clip comprises a bent-down end portion comprising a cut surface, and wherein the cut surface faces the contact.
6. The semiconductor device of claim 1 , wherein the first contact region and the second contact region of the contact clip are straight.
7. The semiconductor device of claim 1 , wherein the first solder joint is flat such that a vertical distance of the second main side of the semiconductor die to the die pad is within a margin of error of 15 μm or less.
8. A semiconductor device, comprising:
a carrier comprising a die pad and a contact;
a semiconductor die comprising a first main side and an opposing second main side, the semiconductor die being attached to the die pad by a first solder joint such that the second main side faces the die pad;
a contact clip comprising a first contact region and a second contact region, the first contact region being attached to the first main side of the semiconductor die by a second solder joint and the second contact region being attached to the contact by a third solder joint,
wherein the first contact region has a convex shape facing towards the first main side of the semiconductor die such that a distance between the first main side and the first contact region increases from a base of the convex region towards an edge of the first contact region,
wherein the base runs along a line that runs substantially perpendicular to a longitudinal axis of the contact clip, and
wherein the convex shape is a V shape with a rounded tip.
9. The semiconductor device of claim 8 , wherein a surface curvature of the first contact region is free of discontinuities.
10. The semiconductor device of claim 8 , wherein a tilt angle between the first main side of the semiconductor die and a leg of the V shape is in a range of 3° to 15°.
11. The semiconductor device of claim 8 , wherein the second contact region of the contact clip has a gull wing shape.
12. The semiconductor device of claim 8 , wherein the second contact region of the contact clip comprises a bent-down end portion comprising a cut surface, and wherein the cut surface faces the contact.
13. The semiconductor device of claim 8 , wherein the first contact region and the second contact region of the contact clip are straight.
14. The semiconductor device of claim 8 , wherein the first solder joint is flat such that a vertical distance of the second main side of the semiconductor die to the die pad is within a margin of error of 15 μm or less.
15. A method for fabricating a semiconductor device, the method comprising:
providing a carrier comprising a die pad and a contact;
depositing a first solder deposit on the die pad and a third solder deposit on the contact;
arranging a semiconductor die comprising a first main side and an opposing second main side on the first solder deposit such that the second main side faces the die pad;
depositing a second solder deposit on the first main side of the semiconductor die;
arranging a contact clip comprising a first contact region and a second contact region over the semiconductor die such that the first contact region contacts the second solder deposit and the second contact region contacts the third solder deposit; and
soldering the first, second and third solder deposits,
wherein the first contact region has a convex shape facing towards the first main side of the semiconductor die such that a distance between the first main side and the first contact region increases from a base of the convex region towards an edge of the first contact region,
wherein the base runs along a line that runs substantially perpendicular to a longitudinal axis of the contact clip,
wherein the contact clip has a uniform width along the longitudinal axis,
wherein the line runs along the entire width.
16. The method of claim 15 , wherein the first, second and third solder deposits are soldered simultaneously.
17. The method of claim 15 , wherein the distance monotonically increases from the base towards the edge.
18. The method of claim 17 , wherein the distance monotonically increases continuously from the base towards the edge.
19. The method of claim 15 , wherein the line coincides with a center axis of the semiconductor die within a margin of error of 200 μm or less.
20. A method for fabricating a semiconductor device, the method comprising:
providing a carrier comprising a die pad and a contact;
depositing a first solder deposit on the die pad and a third solder deposit on the contact;
arranging a semiconductor die comprising a first main side and an opposing second main side on the first solder deposit such that the second main side faces the die pad;
depositing a second solder deposit on the first main side of the semiconductor die;
arranging a contact clip comprising a first contact region and a second contact region over the semiconductor die such that the first contact region contacts the second solder deposit and the second contact region contacts the third solder deposit; and
soldering the first, second and third solder deposits,
wherein the first contact region has a convex shape facing towards the first main side of the semiconductor die such that a distance between the first main side and the first contact region increases from a base of the convex region towards an edge of the first contact region,
wherein the base runs along a line that runs substantially perpendicular to a longitudinal axis of the contact clip,
wherein the convex shape is a V shape with a rounded tip.