IP Library Granted Patent US 11,469,352
Granted Patent B2
US 11,469,352 · App. 16/698,980 · Granted Oct 11, 2022

Display device and manufacturing method thereof

Inventors: Fu-Hsin Chen (Hsinchu, TW); Yu-Chun Lee (Hsinchu, TW); Hung-Chun Tong (Hsinchu, TW); Tzong-Liang Tsai (Hsinchu, TW)
Assignee: Lextar Electronics Corporation
H01L33/504H01L25/0753H01L33/0095H01L33/06H01L2933/0041
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Quick Facts
Patent No.
US 11,469,352
App. No.
16/698,980
Granted
Oct 11, 2022
Kind
B2
Abstract

A display device includes a substrate, a plurality of white light-emitting units, and a color filter layer. The white light-emitting units are arranged on the substrate at intervals, and the white light-emitting units are chip scale package (CSP). The color filter layer is above the white light-emitting units. Each of the white light-emitting units includes a light-emitting diode chip and a wavelength conversion film. The wavelength conversion film directly covers a top surface and side surfaces of the light-emitting diode chip, and the wavelength conversion film converts light emitted by the light-emitting diode chip into white light.

Claims (12)

1. A display device, comprising:

a substrate;

a plurality of white light-emitting units arranged on the substrate at intervals, wherein the white light-emitting units are chip scale package (CSP), and each of the white light-emitting units comprises:

a light-emitting diode chip comprising a n-type semiconductor layer, a p-type semiconductor layer, a luminous layer disposed between the n-type semiconductor layer and the p-type semiconductor layer, a positive electrode disposed between the p-type semiconductor layer and the substrate and being in contact with the substrate, and a negative electrode disposed between the n-type semiconductor layer and the substrate and being in contact with the substrate; and

a wavelength conversion film directly covering and contacting with a top surface and side surfaces of the n-type semiconductor layer of the light-emitting diode chip, and the wavelength conversion is in direct contact with a side surface of the p-type semiconductor layer such that the wavelength conversion film and the light-emitting diode chip have a same profile, and the wavelength conversion film converts light emitted by the light-emitting diode chip into white light; and

a color filter layer above the white light-emitting units comprising a plurality of color resists, wherein the color resists correspond to the white light-emitting units respectively to form a plurality of pixel units.

2. The display device of claim 1 , wherein each of the color resists is a red color resist, a green color resist or a blue color resist.

3. The display device of claim 2 , wherein the color filter layer further comprises a black matrix between the color resists.

4. The display device of claim 1 , wherein the light-emitting diode chip emits blue light.

5. The display device of claim 1 , wherein the wavelength conversion film comprises a plurality of first quantum dots and a plurality of second quantum dots, and a wavelength range of light excited from the first quantum dots are different from a wavelength range of light excited from the second quantum dots.

6. The display device of claim 1 , wherein the light-emitting diode chip is a light-emitting diode chip without substrate, and a thickness of the light-emitting diode chip is in a range from about 5 μm to about 10 μm.

7. The display device of claim 1 , wherein a thickness of the color filter layer is in a range from about 3 μm to about 100 μm.

Assignments (2)
MERGER Recorded Mar 27, 2026
From: LEXTAR ELECTRONICS CORPORATION
To: ENNOSTAR CORPORATION
Reel/Frame 075286/0822 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Nov 28, 2019
From: CHEN, FU-HSIN; LEE, YU-CHUN; TONG, HUNG-CHUN; TSAI, TZONG-LIANG
To: LEXTAR ELECTRONICS CORPORATION
Reel/Frame 051136/0961 →