Nonvolatile ternary memory device using two-dimensional ferroelectric material and method of manufacturing the same
View Patent ↗The present disclosure relates to a nonvolatile ternary memory device using a two-dimensional ferroelectric material and a method of manufacturing the same. The method of manufacturing the nonvolatile ternary memory device according to an embodiment of the present disclosure includes (a) forming a lower electrode on a substrate, (b) forming a two-dimensional ferroelectric material on the lower electrode, (c) forming a semiconductor on the two-dimensional ferroelectric material, and (d) forming an upper electrode on the semiconductor.
1. A method of manufacturing a nonvolatile ternary memory device, the method comprising:
(a) forming a lower electrode on a substrate;
(b) forming a two-dimensional ferroelectric material on the lower electrode;
(c) forming a semiconductor on the two-dimensional ferroelectric material; and
(d) forming an upper electrode on the semiconductor,
wherein the upper electrode includes a first upper electrode, a second upper electrode, a third upper electrode, and a fourth upper electrode.
2. The method of claim 1 , wherein the two-dimensional ferroelectric material includes at least one from among SnTe, GeTe, and GeSnTe 2 .
3. The method of claim 1 , further comprising, after the process (d), electrically connecting the first upper electrode among the first upper electrode, the second upper electrode, the third upper electrode, and the fourth upper electrode to the lower electrode.
4. The method of claim 3 , further comprising, after the process (d),
electrically connecting the first upper electrode to the third upper electrode and electrically connecting the second upper electrode to the fourth upper electrode.
5. The method of claim 4 , wherein
the first upper electrode and the third upper electrode are disposed in a horizontal polarization direction of the two-dimensional ferroelectric material, and
the second upper electrode and the fourth upper electrode are disposed in a vertical polarization direction of the two-dimensional ferroelectric material.
6. The method of claim 5 , wherein a voltage applied between the first upper electrode and the lower electrode is used to adjust a positive direction or a negative direction of the horizontal polarization direction according to a direction in which the voltage is applied.
7. The method of claim 5 , wherein a magnitude of a tunneling current between the first upper electrode and the lower electrode is used to represent a ternary state according to a polarization direction of the two-dimensional ferroelectric material.
8. The method of claim 5 , wherein
a voltage between the first upper electrode and the third upper electrode and a voltage between the second upper electrode and the fourth upper electrode are used for a writing process, and
a voltage between the first upper electrode and the lower electrode is used for a reading process.
9. The method of claim 5 , wherein the first upper electrode and the second upper electrode are electrically connected to each other through a conductive line.
10. A nonvolatile ternary memory device comprising:
a substrate;
a lower electrode formed on the substrate;
a two-dimensional ferroelectric material formed on the lower electrode;
a semiconductor formed on the two-dimensional ferroelectric material; and
an upper electrode formed on the semiconductor,
wherein the upper electrode includes a first upper electrode, a second upper electrode, a third upper electrode, and a fourth upper electrode.
11. The nonvolatile ternary memory device of claim 10 , wherein the two-dimensional ferroelectric material includes at least one from among SnTe, GeTe, and GeSnTe 2 .
12. The nonvolatile ternary memory device of claim 10 , wherein the first upper electrode among the first upper electrode, the second upper electrode, the third upper electrode, and the fourth upper electrode is electrically connected to the lower electrode.
13. The nonvolatile ternary memory device of claim 12 , wherein
the first upper electrode is electrically connected to the third upper electrode, and
the second upper electrode is electrically connected to the fourth upper electrode.
14. The nonvolatile ternary memory device of claim 13 , wherein
the first upper electrode and the third upper electrode are disposed in a horizontal polarization direction of the two-dimensional ferroelectric material, and
the second upper electrode and the fourth upper electrode are disposed in a vertical polarization direction of the two-dimensional ferroelectric material.
15. The nonvolatile ternary memory device of claim 14 , wherein a voltage applied between the first upper electrode and the lower electrode is used to adjust a positive direction or a negative direction of the horizontal polarization direction according to a direction in which the voltage is applied.
16. The nonvolatile ternary memory device of claim 14 , wherein a magnitude of a tunneling current between the first upper electrode and the lower electrode is used to represent a ternary state according to a polarization direction of the two-dimensional ferroelectric material.
17. The nonvolatile ternary memory device of claim 14 , wherein
a voltage between the first upper electrode and the third upper electrode and a voltage between the second upper electrode and the fourth upper electrode are used for a writing process, and
a voltage between the first upper electrode and the lower electrode is used for a reading process.
18. The nonvolatile ternary memory device of claim 14 , wherein the first upper electrode and the second upper electrode are electrically connected to each other through a conductive line.