Liquid crystal on silicon display and a method of forming the same

1. A liquid crystal on silicon (LCOS) display, comprising:

a substrate;

a wafer disposed on a top surface of the substrate;

a liquid crystal (LC) layer disposed on a top surface of the wafer;

a sealant enclosing the LC layer;

an electrode layer disposed on a top surface of the LC layer, which is confined by the wafer, the sealant and the electrode layer;

at least one conductive adhesive disposed and electrically coupled between the electrode layer and the substrate; and

a barrier disposed adjacent to the conductive adhesive and disposed between the electrode layer and the wafer to block particles of the conductive adhesive from entering a location between the electrode layer and the wafer.

2. The display of claim 1 , wherein the substrate comprises a printed circuit board.

3. The display of claim 1 , wherein the substrate comprises:

a plurality of first bond pads; and

at least one wire disposed in or on the substrate to electrically couple the first bond pads.

4. The display of claim 3 , wherein the wafer comprises:

at least one second bond pad;

wherein at least one wire is connected between the first bond pad and the second bond pad.

5. The display of claim 4 , further comprising:

a protection part disposed on the substrate and the wafer to cover and protect the wire.

6. The display of claim 1 , wherein the wafer comprises silicon.

7. The display of claim 1 , wherein the wafer is bonded to the substrate by flip chip bonding.

8. The display of claim 1 , wherein the conductive adhesive comprises silver glue.

9. The display of claim 1 , further comprising:

a cover plate disposed on a top surface of the electrode layer; and

an anti-reflective (AR) layer disposed on a top surface of the cover plate.

10. The display of claim 1 , wherein the electrode layer comprises an indium tin oxide (ITO) electrode layer.

11. A method of forming a liquid crystal on silicon (LCOS) display, comprising:

providing a structure composed of a wafer, a liquid crystal (LC) layer disposed on a top surface of the wafer, a sealant enclosing the LC layer, and an electrode layer disposed on a top surface of the LC layer, which is confined by the wafer, the sealant and the electrode layer;

forming a barrier disposed between the electrode layer and the wafer to block particles from entering a location between the electrode layer and the wafer;

disposing the wafer on a top surface of a substrate; and

forming at least one conductive adhesive disposed and electrically coupled between the electrode layer and the substrate.

12. The method of claim 11 , wherein the substrate comprises a printed circuit board.

13. The method of claim 11 , wherein the substrate comprises:

a plurality of first bond pads; and

at least one wire disposed in or on the substrate to electrically couple the first bond pads.

14. The method of claim 13 , wherein the wafer comprises:

at least one second bond pad;

wherein at least one wire is connected between the first bond pad and the second bond pad.

15. The method of claim 14 , further comprising:

forming a protection part disposed on the substrate and the wafer to cover and protect the wire.

16. The method of claim 11 , wherein the wafer comprises silicon.

17. The method of claim 11 , wherein the wafer is bonded to the substrate by flip chip bonding.

18. The method of claim 11 , wherein the conductive adhesive comprises silver glue.

19. The method of claim 11 , wherein the structure further comprises:

a cover plate disposed on a top surface of the electrode layer; and

an anti-reflective (AR) layer disposed on a top surface of the cover plate.

20. The method of claim 11 , wherein the electrode layer comprises an indium tin oxide (ITO) electrode layer.