Image sensor
An image sensor including a semiconductor substrate having a first surface and a second surface, and a pixel region having a photoelectric conversion region; a first conductive pattern in a first trench defining the pixel region and extending from the first surface toward the second surface; a second conductive pattern in a second trench shallower than the first trench and defined between a plurality of active patterns on the first surface of the pixel region; a transfer transistor and a plurality of logic transistors on the active patterns; and a conductive line on the second surface and electrically connected to the first conductive pattern.
1. An image sensor, comprising:
a semiconductor substrate having a first surface and a second surface, the semiconductor substrate including a pixel region having a photoelectric conversion region;
a first conductive pattern in a first trench, the first trench defining the pixel region and extending from the first surface toward the second surface;
a second conductive pattern in a second trench, the second trench being shallower than the first trench and defined between a plurality of active patterns on the first surface in the pixel region;
a transfer transistor and a plurality of logic transistors on the active patterns; and
a conductive line on the second surface and electrically connected to the first conductive pattern.
2. The image sensor of claim 1 , wherein the first conductive pattern has a grid structure surrounding the pixel region.
3. The image sensor of claim 1 , further comprising a dielectric pattern on the first conductive pattern,
wherein the dielectric pattern fills an upper portion of the first trench, and
wherein a top surface of the dielectric pattern is coplanar with the first surface.
4. The image sensor of claim 3 , wherein
the second trench penetrates the dielectric pattern and exposes a top surface of the first conductive pattern, and
the second conductive pattern is in contact with the top surface of the first conductive pattern.
5. The image sensor of claim 1 , further comprising a device isolation structure defining the active patterns,
wherein the second trench is in the device isolation structure, and
wherein the device isolation structure insulates the second conductive pattern from the semiconductor substrate.
6. The image sensor of claim 1 , wherein a bottom surface of the first conductive pattern is coplanar with the second surface.
7. The image sensor of claim 1 , further comprising a first dielectric pattern in the second trench,
wherein the first dielectric pattern is interposed between the semiconductor substrate and the second conductive pattern, and
wherein the first dielectric pattern insulates the second conductive pattern from the semiconductor substrate.
8. The image sensor of claim 7 , further comprising a second dielectric pattern on the second conductive pattern,
wherein the second dielectric pattern fills an upper portion of the second trench, and
wherein a top surface of the second dielectric pattern is coplanar with the first surface.
9. The image sensor of claim 1 , further comprising:
a connection line layer on the first surface; and
a contact electrically connecting the second conductive pattern to a connection line of the connection line layer.
10. The image sensor of claim 1 , further comprising:
a color filter on the second surface in the pixel region; and
a micro-lens on the color filter.
11. An image sensor, comprising:
a semiconductor substrate having a first surface and a second surface, the semiconductor substrate including a pixel region having a photoelectric conversion region;
a first device isolation structure having a grid structure surrounding the pixel region, the first device isolation structure including a first conductive pattern;
a second device isolation structure in the pixel region, the second device isolation structure including a second conductive pattern; and
a conductive line on the second surface and electrically connected to the first conductive pattern,
wherein top surfaces of the first and second device isolation structures are coplanar with the first surface, and
wherein a distance between a bottom surface of the first device isolation structure and the second surface is less than a distance between a bottom surface of the second device isolation structure and the second surface.
12. The image sensor of claim 11 , wherein
the first device isolation structure further includes a first dielectric pattern on the first conductive pattern,
the second device isolation structure further includes a second dielectric pattern on the second conductive pattern,
wherein top surfaces of the first and second dielectric patterns are coplanar with the first surface.
13. The image sensor of claim 11 , wherein the second device isolation structure comprises:
a first segment on the first device isolation structure; and
a second segment extending from the first segment into the pixel region,
wherein the second conductive pattern of the first segment is in contact with a top surface of the first conductive pattern.
14. The image sensor of claim 13 , further comprising a third device isolation structure defining a plurality of active patterns on the first surface of the pixel region,
wherein the second segment of the second device isolation structure is on the third device isolation structure, and
wherein the third device isolation structure insulates the second conductive pattern of the second segment from the semiconductor substrate.
15. The image sensor of claim 11 , further comprising:
a connection line layer on the first surface; and
a contact electrically connecting the second conductive pattern to a connection line of the connection line layer.
16. An image sensor, comprising:
a semiconductor substrate having a first surface and a second surface, the semiconductor substrate including a pixel region having a photoelectric conversion region;
a first device isolation structure having a grid structure surrounding the pixel region; and
a second device isolation structure in the pixel region,
wherein the first device isolation structure includes a first conductive pattern and a first dielectric pattern on the first conductive pattern,
wherein the second device isolation structure includes a second conductive pattern and a second dielectric pattern on the second conductive pattern,
wherein top surfaces of the first dielectric pattern and the second dielectric pattern are coplanar with the first surface, and
wherein a distance between a top surface of the second conductive pattern and the first surface is less than a distance between a top surface of the first conductive pattern and the first surface.
17. The image sensor of claim 16 , further comprising a conductive line on the second surface and electrically connected to the first conductive pattern.
18. The image sensor of claim 16 , wherein the second device isolation structure comprises:
a first segment on the first device isolation structure; and
a second segment extending from the first segment into the pixel region,
wherein the second conductive pattern of the first segment is in contact with the top surface of the first conductive pattern.
19. The image sensor of claim 18 , further comprising a third device isolation structure defining a plurality of active patterns on the first surface of the pixel region,
wherein the second segment of the second device isolation structure is on the third device isolation structure, and
wherein the third device isolation structure insulates the second conductive pattern of the second segment from the semiconductor substrate.
20. The image sensor of claim 16 , further comprising:
a connection line layer on the first surface; and
a contact electrically connecting the second conductive pattern to a connection line of the connection line layer.