Crystal growing apparatus and crucible having a main body portion and a first portion having a radiation rate different from that of the main body portion
A crystal growing apparatus includes: a crucible which includes a main body portion, and a first portion having a radiation rate different from that of the main body portion, and is capable of controlling a temperature of a specific region inside during heating to a higher or lower temperature than that of the other regions; and a heating unit which is positioned on the outside of the crucible and is configured to heat the crucible by radiant heat, and the first portion is at a position where the crucible and a line segment connecting a heating center of the heating unit and the specific region intersect with each other.
1. A crystal growing apparatus comprising:
a crucible which includes a main body portion, and a first portion having a radiation rate different from that of the main body portion, and is capable of controlling a temperature of a specific region inside of the crucible during heating to a higher or lower temperature than that of other regions; and
a heating unit which is positioned on the outside of the crucible and is configured to heat the crucible by radiant heat,
wherein the first portion is at a position where the crucible and a line segment connecting a heating center of the heating unit and the specific region intersect with each other,
a height of the first portion is within 50% of a height of the crucible,
the specific region is one or more selected from the group consisting of an outer portion in a radial direction of a portion where a seed crystal is installed in the crucible, and a guide portion which is configured to control a flow of a raw material gas from the raw material towards the seed crystal and has a diameter decreasing from a surface of the raw material toward the seed crystal, and
a radiation rate of the first portion is higher than a radiation rate of the main body portion.
2. The crystal growing apparatus according to claim 1 ,
wherein the first portion is exposed to an outer surface of the crucible at a position where the crucible and the line segment connecting the heating center of the heating unit and the specific region intersect with each other.
3. The crystal growing apparatus according to claim 1 ,
wherein an outer surface of the main body portion is a flat surface, and
an outer surface of the first portion is uneven.
4. The crystal growing apparatus according to claim 2 ,
wherein an outer surface of the main body portion is a flat surface, and
an outer surface of the first portion is uneven.
5. The crystal growing apparatus according to claim 1 , further comprising:
a support,
wherein the support is positioned on a lower portion of the crucible and supports the crucible, and
the support rotates in a radial direction.
6. The crystal growing apparatus according to claim 1 , further comprising:
a heat insulating material,
wherein the heat insulating material is a member having a thermal conductivity equal to or smaller than 5 W/mK.
7. The crystal growing apparatus according to claim 5 , further comprising:
a heat insulating material,
wherein the heat insulating material is a member having a thermal conductivity equal to or smaller than 5 W/mK.
8. The crystal growing apparatus according to claim 7 , wherein the support passes through the heat insulating material and projects downward from the crucible.