Inductive coil structure and inductively coupled plasma generation system
An inductively-coupled plasma (ICP) generation system may include a dielectric tube, a first inductive coil structure to enclose the dielectric tube, an RF power supply, a first main capacitor between a positive output terminal of the RF power supply and one end of the first inductive coil structure, and a second main capacitor between a negative output terminal of the RF power supply and an opposite end of the first inductive coil structure. The first inductive coil structure may include inductive coils connected in series to each other and placed at different layers, the inductive coils having at least one turn at each layer, and auxiliary capacitors, which are respectively provided between adjacent ones of the inductive coils to distribute a voltage applied to the inductive coils.
1. An inductively-coupled plasma (ICP) generating device including an inductive coil and a tube, wherein:
the inductive coil comprises:
a first unit antenna including a first end and a second end and wound around the tube; and
a second unit antenna which is located at a predetermined distance from the first unit antenna in a direction of length of the tube and includes a third end and a fourth end, and wound around the tube, and
wherein:
the first unit antenna is provided with a first circular arc between the first end and the second end,
the second antenna is provided with a second circular arc between the third end and the fourth end, and
a maximum voltage value at the second end and a maximum voltage value at the fourth end correspond to each other.
2. The inductively-coupled plasma (ICP) generating device of the claim 1 , wherein:
a maximum voltage value at the third end is closer to a maximum voltage value at the first end than the maximum voltage value at the second end.
3. The inductively-coupled plasma (ICP) generating device of the claim 1 , wherein:
a voltage between the first end and the second end correspond to a voltage between the first end and the fourth end.
4. The inductively-coupled plasma (ICP) generating device of the claim 1 , wherein:
a voltage at the second end with respect to the first end has the same value and opposite sign as a voltage at the third end with respect to the second end.
5. The inductively-coupled plasma (ICP) generating device of the claim 1 , wherein:
the ICP generating device receives power from a RF power supply which outputs an AC signal with respect to a ground, and
the maximum voltage value at the second end is a highest measured voltage value between the second end and the ground.
6. The inductively-coupled plasma (ICP) generating device of the claim 1 , wherein:
the ICP generating device is connected to a RF power supply by a positive terminal and a negative terminal, and
the maximum voltage value at the second end is a highest measured voltage value between the second end and the positive terminal.
7. The inductively-coupled plasma (ICP) generating device of the claim 1 , wherein:
a voltage between the first end and the second end at a certain time point and a voltage between the first end and the fourth end at the certain time point correspond to each other.
8. The inductively-coupled plasma (ICP) generating device of the claim 1 , further comprising:
an electrical member which is connected between the second end and the third end, and wherein the maximum voltage value at the second end and the maximum voltage value at the fourth end correspond to each other.
9. The inductively-coupled plasma (ICP) generating device of the claim 8 , wherein:
the electrical member lowers a voltage applied to the second unit antenna.
10. The inductively-coupled plasma (ICP) generating device of the claim 8 , wherein:
the electrical member is a capacitor connected between the second end and the third end, and the capacitor lowers the maximum voltage value at the fourth end to have corresponding value to the maximum voltage value at the second end.
11. The inductively-coupled plasma (ICP) generating device of the claim 10 , wherein:
each of the first unit antenna and the second unit antenna has a first inductance, the capacitor has a first capacitance, and
the inductive coil resonates at a first frequency which is determined based on the first inductance and the first capacitance.
12. The inductively-coupled plasma (ICP) generating device of the claim 1 , wherein:
a maximum voltage value at a first point of the first unit antenna and a maximum voltage value at a second point of the second unit antenna correspond to each other, and
the first point and the second point are located at different positions in a view of the direction of the length of the tube.
13. The inductively-coupled plasma (ICP) generating device of the claim 12 , wherein:
the second point is located at a position rotated by a first angle from the first point in a circumferential direction of the tube about a central axis of the tube, in the view of the direction of the length of the tube.
14. The inductively-coupled plasma (ICP) generating device of the claim 13 , wherein:
the first unit antenna includes a first opened portion formed between the first end and the second end which is opened in a first direction,
the second unit antenna includes a second opened portion formed between the third end and the fourth end which is opened in a second direction which is different from the first direction, and
the second direction is a direction which is rotated from the first direction by the first angle in the circumferential direction of the tube about the central axis of the tube, in the view of the direction of the length of the tube.
15. The inductively-coupled plasma (ICP) generating device of the claim 14 , wherein:
the second direction is perpendicular to the first direction.
16. The inductively-coupled plasma (ICP) generating device of the claim 1 , wherein:
the first unit antenna comprises multiple turns including a first turn which is an inner-most turn among the multiple turns and a second turn which is an outer-most turn among the multiple turns.
17. The inductively-coupled plasma (ICP) generating device of the claim 16 , wherein:
a maximum voltage value at a first point of the first turn correspond to a maximum voltage value at a second point of the second turn.
18. The inductively-coupled plasma (ICP) generating device of the claim 17 , wherein:
a voltage at the second point of the second turn has the same value and opposite sign as a voltage at the first point of the first turn.
19. The inductively-coupled plasma (ICP) generating device of the claim 17 , wherein:
the first unit antenna further comprises a third turn connected between the first turn and the second turn and a fourth turn connected between the third turn and the second turn, and
the maximum voltage value at the first point is larger than a maximum voltage value at the third point of the third turn.
20. The inductively-coupled plasma (ICP) generating device of the claim 17 , wherein:
the second unit antenna comprises multiple turns including a fifth turn which is an inner-most turn among the multiple turns and a sixth turn which is an outer-most turn among the multiple turns;
a maximum voltage value at a fifth point of the fifth turn correspond to the maximum voltage value at the first point, and
a maximum voltage value at a sixth point of the sixth turn correspond to the maximum voltage value at the second point.