Vertical semiconductor device and method for fabricating the same

1. A method for fabricating a vertical semiconductor device comprising:

forming an alternating stack of dielectric layers and sacrificial layers over a lower structure;

forming an opening by etching the alternating stack;

forming a blocking layer on the alternating stack in which the opening is formed;

performing a surface treatment to adsorb a deposition inhibitor on a surface of the blocking layer; and

forming a charge storage layer on the blocking layer on which the deposition inhibitor is adsorbed.

2. The method of claim 1 , wherein the surface treatment comprises a plasma treatment.

3. The method of claim 1 , wherein the surface treatment is concentrated on a top corner of the opening.

4. The method of claim 1 , wherein the surface treatment comprises partially etching the blocking layer at a top corner of the opening.

5. The method of claim 1 , wherein the surface treatment is performed by plasma treatment comprising a plasma including an etch species.

6. The method of claim 1 , wherein the deposition inhibitor comprises a plasma including fluorine.

7. The method of claim 1 , wherein the deposition inhibitor comprises a plasma including nitrogen trifluoride NF 3 .

8. The method of claim 1 , wherein the deposition inhibitor comprises fluorine F, chlorine Cl, nitrogen N 2 or hydrogen fluoride HF.

9. A method for fabricating a vertical semiconductor device comprising:

forming an alternating stack of dielectric layers and sacrificial layers over a lower structure;

forming an opening by etching the alternating stack;

forming a blocking layer on the alternating stack in which the opening is formed;

performing a first surface treatment to adsorb a first deposition inhibitor on a surface of the blocking layer;

forming a charge storage layer on the blocking layer on which the first deposition inhibitor is adsorbed; and

performing a second surface treatment to adsorb a second deposition inhibitor on a surface of the charge storage layer.

10. The method of claim 9 , wherein the first surface treatment comprises performing a plasma treatment.

11. The method of claim 9 , wherein the first surface treatment is concentrated on a top corner of the opening.

12. The method of claim 9 , wherein the first surface treatment comprises partially etching the blocking layer at a top corner of the opening.

13. The method of claim 9 , wherein the first surface treatment comprises using a plasma including an etch species.

14. The method of claim 9 , wherein the first deposition inhibitor comprises a plasma including fluorine.

15. The method of claim 9 , wherein the first deposition inhibitor comprises a plasma including nitrogen trifluoride NF 3 .

16. The method of claim 9 , wherein the first deposition inhibitor comprises fluorine F, chlorine Cl, nitrogen N 2 or hydrogen fluoride HF.

17. The method of claim 9 , wherein the blocking layer comprises silicon oxide or aluminum oxide.

18. The method of claim 9 , wherein the first deposition inhibitor and the second deposition inhibitor comprise the same material of a plasma.

19. The method of claim 9 , wherein the first deposition inhibitor and the second deposition inhibitor comprise fluorine F, chlorine Cl, nitrogen N 2 or hydrogen fluoride HF.

20. The method of claim 9 , further comprises:

forming a tunnel dielectric layer on the charge storage layer on which the second deposition inhibitor is adsorbed; and

forming a channel layer on the tunnel dielectric layer.