Semiconductor image sensor
A BSI image sensor includes a substrate including a front side and a back side opposite to the front side, a plurality of pixel sensors arranged in an array, an isolation grid disposed in the substrate and separating the plurality of pixel sensors from each other, a reflective grid disposed over the isolation grid on the back side of the substrate, an a low-n grid disposed over the back side of the substrate and overlapping the reflective grid from a top view. A depth of the reflective grid is less than a depth of the isolation grid. A width of the low-n grid is greater than a width of the reflective grid.
1. A back side illumination (BSI) image sensor comprising:
a substrate comprising a front side and a back side opposite to the front side;
a plurality of pixel sensors arranged in an array,
an isolation grid disposed in the substrate and separating the plurality of pixel sensors from each other;
a reflective grid disposed over the isolation grid on the back side of the substrate, and a depth of the reflective grid being less than a depth of the isolation grid; and
a low-n grid disposed over the back side of the substrate and overlapping the reflective grid from a plan view,
wherein a width of the low-n grid is greater than a width of the reflective grid.
2. The BSI image sensor of claim 1 , further comprising a plurality of color filters disposed over the substrate on the back side.
3. The BSI image sensor of claim 2 , wherein the low-n grid is disposed between and separating the color filters from each other.
4. The BSI image sensor of claim 1 , wherein the reflective grid is disposed between the low-n grid and the isolation grid.
5. The BSI image sensor of claim 1 , wherein the low-n grid comprises an insulating material.
6. The BSI image sensor of claim 1 , wherein the isolation grid comprises at least an insulating material.
7. The BSI image sensor of claim 1 , wherein the reflective grid comprises a conductive material.
8. The BSI image sensor of claim 1 , wherein the depth of the isolation grid is substantially equal to or less than a thickness of the substrate.
9. The BSI image sensor of claim 1 , wherein the low-n grid is separated from the reflective grid.
10. The BSI image sensor of claim 1 , wherein the low-n grid is in contact with the reflective grid.
11. A back side illumination (BSI) image sensor comprising:
a substrate;
a pixel sensor; and
a hybrid isolation surrounding the pixel sensor in the substrate, and the hybrid isolation comprising:
a conductive structure;
a dielectric layer covering at least sidewalls of the conductive structure; and
a first insulating structure disposed in the substrate,
wherein a thickness of the conductive structure is greater than a thickness of the first insulating layer.
12. The BSI image sensor of claim 11 , wherein a thickness of the hybrid isolation is substantially equal to a thickness of the substrate.
13. The BSI image sensor of claim 11 , wherein the dielectric layer covers sidewalls and a bottom surface of the first insulating structure.
14. The BSI image sensor of claim 11 , further comprising a second insulating structure disposed over the substrate on the back side.
15. The BSI image sensor of claim 14 , wherein the conductive structure is disposed between the first insulating structure and the second insulating structure.
16. A back side illumination (BSI) image sensor comprising:
a substrate comprising a front side and a back side opposite to the front side;
a pixel sensor;
a color filter corresponding to the pixel sensor and disposed over the substrate on the back side;
a first insulating structure disposed in the substrate and surrounding the pixel sensor;
a first conductive structure disposed in the substrate and over the first insulating structure on the back side of the substrate and surrounding the pixel sensor;
a second insulating structure surrounding the color filter on the back side of the substrate; and
a second conductive structure surrounding the color filter on the back side of the substrate,
wherein the second insulating structure and the second conductive structure overlap the first insulating structure and the first conductive structure from a plan view, the first conductive structure is aligned with the second conductive structure.
17. The BSI image sensor of claim 16 , further comprising a dielectric layer covering at least sidewall and a bottom surface of the first insulating structure.
18. The BSI image sensor of claim 16 , wherein the second insulating structure cover sidewalls and a top surface of the second conductive structure.
19. The BSI image sensor of claim 16 , wherein the first conductive structure is separated from the second conductive structure.
20. The BSI image sensor of claim 19 , wherein the first insulating structure is aligned with the second insulating structure and separated from the second insulating structure.