Devices including gate spacer with gap or void and methods of forming the same
Devices and structures that include a gate spacer having a gap or void are described along with methods of forming such devices and structures. In accordance with some embodiments, a structure includes a substrate, a gate stack over the substrate, a contact over the substrate, and a spacer disposed laterally between the gate stack and the contact. The spacer includes a first dielectric sidewall portion and a second dielectric sidewall portion. A void is disposed between the first dielectric sidewall portion and the second dielectric sidewall portion.
1. A method of manufacturing a semiconductor device, the method comprising:
forming a dummy gate stack over a semiconductor fin;
forming a first spacer adjacent to the dummy gate stack;
forming a second spacer adjacent to the first spacer;
forming a third spacer adjacent to the second spacer;
forming a conductive contact in physical contact with the third spacer;
replacing the dummy gate stack with a gate stack;
removing the second spacer to form a void between the first spacer and the third spacer; and
capping the void.
2. The method of claim 1 , wherein the second spacer comprises aluminum oxide.
3. The method of claim 2 , wherein the first spacer comprises silicon nitride.
4. The method of claim 1 , wherein the capping the void comprises depositing a dielectric material at least partially into the void.
5. The method of claim 4 , wherein the dielectric material comprises silicon carbon oxynitride.
6. The method of claim 1 , wherein after the capping the void the void has a height that is between about 0.3 times to about 0.7 times a height of the first spacer over the semiconductor fin.
7. The method of claim 1 , wherein the second spacer has a width between about 2 nm and about 4 nm.
8. A method of manufacturing a semiconductor device, the method comprising:
forming a tri-layer spacer over a semiconductor fin and adjacent to a dummy gate stack;
replacing the dummy gate stack with a conductive gate;
forming a conductive contact in physical contact with the tri-layer spacer;
removing a middle spacer of the tri-layer spacer to expose a source/drain region; and
depositing a dielectric material to cap a void between the conductive gate and the conductive contact.
9. The method of claim 8 , wherein the middle spacer has a width of between about 2 nm and about 4 nm.
10. The method of claim 9 , wherein a second spacer of the tri-layer spacer has a width of between about 1 nm and about 3 nm.
11. The method of claim 8 , wherein the tri-layer spacer has a width of between about 4 nm and about 10 nm.
12. The method of claim 8 , wherein the tri-layer spacer has a height over the semiconductor fin of between about 30 nm and about 80 nm.
13. The method of claim 12 , wherein the tri-layer spacer has a height over an isolation region of between about 80 nm and about 130 nm.
14. The method of claim 8 , wherein an aspect ratio of a width of the tri-layer spacer to a height of the tri-layer spacer over the semiconductor fin is between about 3 to about 20.
15. A method of manufacturing a semiconductor device, the method comprising:
applying an etchant to a semiconductor substrate to remove a first spacer between a second spacer and a third spacer, the second spacer being adjacent to a gate stack, the third spacer being adjacent to a conductive contact; and
depositing a dielectric material, wherein the depositing the dielectric material seals an area between the second spacer and the third spacer.
16. The method of claim 15 , wherein an aspect ratio of a width of the first spacer, the second spacer, and the third spacer to a height of the first spacer over the semiconductor substrate is between about 3 to about 20.
17. The method of claim 15 , wherein an aspect ratio of a width of the first spacer, the second spacer, and the third spacer to a height of the first spacer over an isolation region is between about 8 to about 33.
18. The method of claim 15 , wherein an aspect ratio of a width of the first spacer to a height of the second spacer over the semiconductor substrate is between about 7 to about 20.
19. The method of claim 15 , wherein an aspect ratio of a width of the first spacer to a height of the second spacer over an isolation region is between about 20 to about 65.
20. The method of claim 15 , wherein the dielectric material is deposited using an atomic layer deposition process.