Dual dielectric layer for closing seam in air gap structure
A structure includes an air gap structure including: an opening in a first dielectric layer between adjacent conductors, and a non-conformal dielectric layer over the opening. In some cases, the non-conformal dielectric layer narrows an end portion of the opening of the air gap but may not seal the opening. In other cases, the non-conformal layer may seal the end portion of the opening and include a seam therein. The air gap structure may also include a conformal dielectric layer on the non-conformal dielectric layer. The conformal layer either seals the end portion of the opening or, if present, seals the seam. The structure may also include a wiring layer over the air gap structure.
1. A structure, comprising:
an air gap structure including:
an opening in a first dielectric layer between adjacent conductors,
a non-conformal dielectric layer over the opening, the non-conformal dielectric layer closing an end portion of the opening,
a seam in the non-conformal dielectric layer over the end portion of the opening, and
a conformal dielectric layer over the non-conformal dielectric layer, the conformal dielectric layer structured to seal the seam in the non-conformal dielectric layer and being devoid of wiring; and
a wiring layer over the air gap structure.
2. The structure of claim 1 , wherein the non-conformal dielectric layer includes a silane-based silicon dioxide.
3. The structure of claim 1 , wherein the conformal dielectric layer includes one of: tetraethyl orthosilicate (TEOS) based silicon dioxide and fluorinated TEOS (FTEOS) based silicon dioxide.
4. The structure of claim 1 , wherein the seam has a length between 100 and 160 nanometers.
5. The structure of claim 1 , wherein the conformal dielectric layer includes carbon (C).
6. The structure of claim 1 , wherein the opening of the air gap structure is devoid of the non-conformal dielectric layer therein.
7. The structure of claim 1 , wherein the non-conformal dielectric layer has a thickness between 2100 and 2300 Ångstroms, and the conformal dielectric layer has a thickness between 2100 and 2300 Ångstroms.
8. The structure of claim 1 , wherein a lower surface of the wiring layer is distanced from a sealing point of the air gap structure by at least a portion of the conformal dielectric layer.
9. A structure, comprising:
an air gap structure including:
an opening in a first dielectric layer between adjacent conductors,
a non-conformal dielectric layer over the opening, the non-conformal dielectric layer narrowing an end portion of the opening but not sealing the opening, and
a conformal dielectric layer on the non-conformal dielectric layer, the conformal dielectric layer structured to seal the end portion of the opening; and
a wiring layer over the air gap structure.
10. The structure of claim 9 , wherein the non-conformal dielectric layer includes a silane-based silicon dioxide.
11. The structure of claim 9 , wherein the conformal dielectric layer includes one of: tetraethyl orthosilicate (TEOS) based silicon dioxide and fluorinated TEOS (FTEOS) based silicon dioxide.
12. The structure of claim 9 , wherein the conformal dielectric layer includes carbon (C).
13. The structure of claim 9 , wherein the opening of the air gap structure is devoid of the non-conformal dielectric layer therein.
14. The structure of claim 9 , wherein the non-conformal dielectric layer has a thickness between 2100 and 2300 Ångstroms, and the conformal dielectric layer has a thickness between 2100 and 2300 Ångstroms.
15. The structure of claim 9 , wherein a lower surface of the wiring layer is distanced from a sealing point of the air gap structure by at least a portion of the conformal dielectric layer.