SEMICONDUCTOR DEVICES WITH SUPERLATTICE LAYERS
In accordance with some embodiments of the present disclosure, a semiconductor device (e.g., a light-emitting device) is provided. The semiconductor device may include a first epitaxial layer of a first group III-V material, a superlattice layer grown on the first epitaxial layer of the first group III-V material, and a second epitaxial layer of the first group iii-v material grown on the superlattice layer. In some embodiments, the superlattice layer may include the first group III-V material and a second group III-V material. In some embodiments, the first epitaxial layer may include the first group III-V material of a semipolar orientation. The semipolar orientation may include at least one of at least one of a (20 2 1) orientation, a (20 21 ) orientation, a (30 3 1) orientation, or a (30 31 ) orientation including off-axis orientations within ±4 degrees. The second epitaxial layer may include the first group III-V material of the semipolar orientation.
1 . A semiconductor device, comprising:
a first epitaxial layer of a first group III-V material;
a superlattice layer grown on the first epitaxial layer of the first group III-V material, wherein the superlattice layer comprises the first group III-V material and a second group III-V material; and
a second epitaxial layer of the first group III-V material grown on the superlattice layer.
2 . The semiconductor device of claim 1 , wherein the first group III-V material comprises GaN, and wherein the second group III-V material comprises AlGaN.
3 . The semiconductor device of claim 1 , wherein the first epitaxial layer comprises a first undoped layer of the first group III-V material.
4 . The semiconductor device of claim 3 , wherein the second epitaxial layer comprises a second undoped layer of the first group III-V material.
5 . The semiconductor device of claim 1 , wherein the superlattice layer comprises a plurality of pairs of a layer of the first group III-V material and a layer of the second group III-V material.
6 . The semiconductor device of claim 5 , wherein a thickness of the plurality of pairs of the layer of the first group III-V material and the layer of the second group III-V material is between 0.5 nm and 5 μm.
7 . The semiconductor device of claim 5 , wherein the first epitaxial layer comprises the first group III-V material of a semipolar orientation, wherein the semipolar orientation comprises at least one of a (20 2 1) orientation, a (20 21 ) orientation, a (30 3 1) orientation, or a (30 31 ) orientation including off-axis orientations within ±4 degrees.
8 . The semiconductor device of claim 7 , wherein the second epitaxial layer comprises the first group III-V material of the semipolar orientation.
9 . The semiconductor device of claim 7 , wherein the first epitaxial layer of the first group III-V material is grown on a growth template comprising the first group III-V material of the semipolar orientation.
10 . The semiconductor device of claim 1 , further comprising:
a semiconductor structure grown on the second epitaxial layer of the first group III-V material, the semiconductor structure comprising:
an active layer comprising at least one quantum well structure; and
a p-doped layer of the first group III-V material.
11 . A method for fabricating a semiconductor device, comprising:
growing a first epitaxial layer of a first group III-V material;
growing, on the first epitaxial layer of the first group III-V material, a superlattice layer grown comprising the first group III-V material and a second group III-V material; and
growing, on the superlattice layer, a second epitaxial layer of the first group III-V material.
12 . The method of claim 11 , wherein the first group III-V material comprises GaN, and wherein the second group III-V material comprises AlGaN.
13 . The method of claim 11 , wherein growing the first epitaxial layer comprises growing a first undoped layer of the first group III-V material.
14 . The method of claim 13 , wherein growing the second epitaxial layer comprises growing a second undoped layer of the first group III-V material.
15 . The method of claim 11 , wherein growing the superlattice layer comprises growing a plurality of pairs of a layer of the first group III-V material and a layer of the second group III-V material.
16 . The method of claim 15 , wherein a thickness of the plurality of pairs of the layer of the first group III-V material and the layer of the second group III-V material is between 0.5 nm and 5 μm.
17 . The method of claim 11 , wherein growing the first epitaxial layer comprises growing the first group III-V material on a growth template along a semipolar orientation.
18 . The method of claim 17 , wherein the semipolar orientation comprises at least one of a (20 2 1) orientation, a (20 21 ) orientation, a (30 3 1) orientation, or a (30 31 ) orientation including off-axis orientations within ±4 degrees.
19 . The method of claim 18 , wherein growing the second epitaxial layer comprises growing the first group III-V material along the semipolar orientation.
20 . The method of claim 11 , further comprising:
growing a semiconductor structure on the second epitaxial layer of the first group III-V material, wherein growing the semiconductor structure comprises:
growing an active layer comprising at least one quantum well structure; and
growing a p-doped layer of the first group III-V material.