Solid-state imaging apparatus, imaging system, and distance measurement method
To improve accuracy of distance measurement using a Z pixel having the same size as size of a visible light pixel. In a solid-state imaging apparatus, a visible light converting block includes a plurality of visible light converting units in which light receiving faces for receiving visible light are disposed and configured to generate electric charges in accordance with a light receiving amount of the received visible light, and a visible light electric charge holding unit configured to exclusively hold the electric charges respectively generated by the plurality of visible light converting units in periods different from each other. An infrared light converting block includes a plurality of infrared light converting units in which light receiving faces which have substantially the same size as size of the light receiving faces of the visible light converting units and which receive infrared light are disposed and configured to generate electric charges in accordance with a light receiving amount of the received infrared light, and an infrared light electric charge holding unit configured to collectively and simultaneously hold the electric charges respectively generated by the plurality of infrared light converting units.
1. A light detecting device comprising:
a first pixel unit including a first, second, and third photoelectric converting units configured to detect visible light, a fourth photoelectric converting unit configured to detect infrared light, and a first floating diffusion configured to receive electric charges from the first to the fourth photoelectric converting units;
a second pixel unit including a fifth, sixth, and seventh photoelectric converting units configured to detect the visible light, an eighth photoelectric converting unit configured to detect the infrared light, and a second floating diffusion configured to receive electric charges from the fifth to the eighth photoelectric converting units;
a third pixel unit including a ninth, tenth, and eleventh photoelectric converting units configured to detect the visible light, a twelfth photoelectric converting unit configured to detect the infrared light, and a third floating diffusion configured to receive electric charges from the ninth to the twelfth photoelectric converting units; and
a fourth pixel unit including a thirteenth, fourteenth, and fifteenth photoelectric converting units configured to detect the visible light, a sixteenth photoelectric converting unit configured to detect the infrared light, and a fourth floating diffusion configured to receive electric charges from the thirteenth to the sixteenth photoelectric converting units,
wherein
the first pixel unit is divided into the first to the fourth photoelectric converting units by a first separation region overlapping with the first floating diffusion,
the second pixel unit is divided into the fifth to the eighth photoelectric converting units by a second separation region overlapping with the second floating diffusion,
the third pixel unit is divided into the ninth to the twelfth photoelectric converting units by a third separation region overlapping with the third floating diffusion,
the fourth pixel unit is divided into the thirteenth to the sixteenth photoelectric converting units by a fourth separation region overlapping with the fourth floating diffusion,
each of the first, second, third, and fourth floating diffusions is connected to a respective electric charge transferring unit and a respective overflow drain, and
each respective electric charge transferring unit and respective overflow drain is configured with a MOS transistor.