IP Library Granted Patent US 11,311,937
Granted Patent B2
US 11,311,937 · App. 16/716,809 · Granted Apr 26, 2022

Apparatus and method for the production of quantum particles

Inventors: Kamal Hadidi (Somerville, MA); Gregory Wrobel (Boxford, MA)
Assignee: 6K Inc.
B22F9/082B22F1/0003B22F1/0088B22F1/02B22F9/16B82B3/0033C01B19/007C01G9/03C23C10/08C23C26/00B22F2009/0836B22F2009/0848B22F2301/30B22F2302/45B22F2998/10B22F2999/00B82Y30/00B82Y40/00C01P2004/64Y10S977/774Y10S977/896
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Quick Facts
Patent No.
US 11,311,937
App. No.
16/716,809
Granted
Apr 26, 2022
Kind
B2
Abstract

Systems, methods, and devices are disclosed for producing quantum particles (e.g., quantum dots) having a uniform size by vaporization of molten precursor droplets. More particularly, the present technology produces quantum dots by melting or liquefying solid and substantially pure precursor materials followed by production of uniformly sized droplets of molten precursor by use of a droplet maker into a microwave generated plasma torch.

Claims (22)

1. A system for the manufacture of particles, the system comprising:

a material feeding system for injecting into a plasma a molten precursor material that is reactive to a components of a reactive plasma gas;

a plasma chamber in communication with the material feeding system and disposed to receive the molten precursor material from the material feeding system;

at least one inlet for introducing a reactive gas or gas mixture into the plasma chamber;

an energy source for forming the plasma, the energy source in communication with the plasma chamber and disposed to apply energy to the reactive gas or gas mixture in the plasma chamber to form the plasma within the plasma chamber to react the molten precursor material with the reactive gas; and

a quenching chamber in communication with the plasma chamber and disposed to receive an output of the plasma chamber, the quenching chamber adapted to quench the output of the plasma chamber to form product particles from a reaction between the molten precursor material and the reactive gas.

2. The system of claim 1 , wherein the molten precursor material includes titanium, aluminum, boron, silicon, or compounds thereof.

3. The system of claim 2 , wherein the reactive gas introduced into the plasma chamber includes nitrogen, cracked ammonia, methane, or carbon dioxide.

4. The system of claim 3 , wherein the product particles include titanium nitride, aluminum nitride, boron nitride, silicon carbide, or silicon nitride particles having a stoichiometry of TiN, Ti2N, TiN2, Ti3N2, Ti3N4, Si3N4, SiC, AN, or BN.

5. The system of claim 1 , wherein the product particles are between about 0.01 microns and 0.1 microns.

6. The system of claim 1 , wherein the product particles are between about 1 nanometer and about 100 nanometers (0.1 microns).

7. The system of claim 1 , wherein the product particles are a compound formed by the reaction between the molten precursor material and the reactive gas.

8. A system for the manufacture of compound particles comprising:

a solid precursor material including a first element to be incorporated into the compound particles;

a melt chamber for melting the solid precursor material into a molten precursor material;

a material feeding system for injecting the molten precursor material into a plasma;

a plasma chamber in communication with the material feeding system and disposed to receive the molten precursor material from the material feeding system;

at least one inlet for introducing a reactive gas or gas mixture into the plasma chamber, the gas including a second element to be incorporated into the compound particles;

an energy source for forming the plasma, the energy source in communication with the plasma chamber and disposed to apply energy to the gas in the plasma chamber to form the plasma within the plasma chamber to react the first element and the second element; and

a quenching chamber in communication with the plasma chamber and disposed to receive an output of the plasma chamber, the quenching chamber adapted to quench the output of the plasma chamber to form the compound particles including the first element and the second element.

9. The system of claim 8 , wherein the first element includes titanium, silicon, aluminum, or boron; the second element includes nitrogen, cracked ammonia, methane, or carbon dioxide; and the compound particles are spherical particles of titanium nitride, aluminum nitride, boron nitride, silicon carbide, silicon nitride.

10. The system of claim 8 , wherein spherical titanium nitride particles are produced by reacting titanium particles with a nitrogen plasma.

Assignments (3)
CHANGE OF NAME Recorded Sep 29, 2020
From: AMASTAN TECHNOLOGIES INC.
To: 6K INC.
Reel/Frame 053911/0165 →
CHANGE OF NAME Recorded May 21, 2020
From: AMASTAN TECHNOLOGIES LLC
To: AMASTAN TECHNOLOGIES INC.
Reel/Frame 052724/0543 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Feb 20, 2020
From: HADIDI, KAMAL; WROBEL, GREGORY
To: AMASTAN TECHNOLOGIES LLC
Reel/Frame 051873/0795 →
Continuity (2)
Division 15347225 · Nov 9, 2016
Related Publication 20200139446A1 · May 7, 2020
Cited By (3)
US 12,195,338 US 12,261,023 US 12,406,829