SiC chemical vapor deposition apparatus

1. A SiC chemical vapor deposition apparatus comprising:

a furnace body inside of which a growth space is formed;

a placement table which is positioned in the growth space and has a placement surface on which a SiC wafer is placed; and

two gas supply sources connected to the furnace body, wherein the two gas supply sources are a raw material gas supply source and an inert gas supply source,

wherein the furnace body comprises

a first hole which is positioned on an upper portion which faces the placement surface, wherein the first hole is connected with the raw material gas supply source to supply a raw material gas and generate a SiC epitaxial film in the growth space,

a second hole which is positioned on a side wall of the furnace body, wherein the second hole is not connected with the raw material gas supply source but is connected with the inert gas supply source to supply an inert gas,

a third hole which is positioned on the side wall of the furnace body at a lower position than the second hole and discharges the gases included in the growth space, and

a protrusion which protrudes towards the growth space from a lower end of the second hole to adjust a flow of the raw material gas,

wherein

a flow direction of the inert gas which is supplied from the second hole is mainly a direction along the protrusion, and

a flow of the inert gas includes a flow which flows upwards along the side wall to prevent generation of deposits which are caused on the side wall by the raw material gas, and

wherein the furnace body includes a first portion, a second portion, and a third portion from above,

an inner diameter of the first portion is smaller than an inner diameter of the third portion,

the second portion bonds the first portion and the third portion to each other,

the first hole is positioned in the first portion,

the second hole and the protrusion are positioned in the second portion, and

the third hole is positioned in the third portion, and

wherein the lower end of the second hole directly connects to an upper surface of the protrusion.

2. The SiC chemical vapor deposition apparatus according to claim 1 ,

wherein the protrusion exists in a ring shape over an entire periphery of the side wall of the furnace body.

3. The SiC chemical vapor deposition apparatus according to claim 1 ,

wherein the protrusion is parallel with the placement surface.

4. The SiC chemical vapor deposition apparatus according to claim 1 ,

wherein the protrusion protrudes from the side wall of the furnace body towards the growth space such that the protrusion is tilted obliquely upward with respect to the placement surface.

5. The SiC chemical vapor deposition apparatus according to claim 1 ,

wherein a first end of the protrusion on a growth space side is positioned outside of an outer periphery of the SiC wafer, which is placed on the placement surface, in a plan view of the placement surface.

6. The SiC chemical vapor deposition apparatus according to claim 1 ,

wherein the second hole is positioned over an entire periphery of the side wall of the furnace body.

7. The SiC chemical vapor deposition apparatus according to claim 1 ,

wherein the second hole is positioned higher than the placement surface of the placement table in the furnace body.

8. The SiC chemical vapor deposition apparatus according to claim 1 ,

wherein the third hole is positioned at a lower portion than the placement surface of the placement table in the furnace body.

9. The SiC chemical vapor deposition apparatus according to claim 1 ,

wherein an angle of the protrusion with respect to a vertical direction is 30° to 150°.

10. The SiC chemical vapor deposition apparatus according to claim 1 ,

wherein an angle of the protrusion with respect to a vertical direction is 90° to 150°.