Plasma processing apparatus
A plasma processing apparatus includes a balun having a first unbalanced terminal, a second unbalanced terminal, a first balanced terminal, and a second balanced terminal, a grounded vacuum container, a first electrode electrically connected to the first balanced terminal, and a second electrode electrically connected to the second balanced terminal. When Rp represents a resistance component between the first balanced terminal and the second balanced terminal when viewing a side of the first electrode and the second electrode from a side of the first balanced terminal and the second balanced terminal, and X represents an inductance between the first unbalanced terminal and the first balanced terminal, 1.5≤X/Rp≤5000 is satisfied.
1. A plasma processing apparatus comprising:
a balun including a first unbalanced terminal, a second unbalanced terminal, a first balanced terminal, and a second balanced terminal;
a grounded vacuum container;
a first electrode electrically connected to the first balanced terminal;
a second electrode electrically connected to the second balanced terminal, and
−10.0≥dB ISO≥−80 dB is satisfied, wherein ISO equals 20 log(I3/I2′), I2′ is a current flowing through the second unbalanced terminal, and I3 is a current flowing from the first balanced terminal to ground.
2. The plasma processing apparatus according to claim 1 , wherein the first balanced terminal and the first electrode are electrically connected via a blocking capacitor.
3. The plasma processing apparatus according to claim 1 , wherein the second balanced terminal and the second electrode are electrically connected via a blocking capacitor.
4. The plasma processing apparatus according to claim 1 , wherein the first balanced terminal and the first electrode are electrically connected via a blocking capacitor, and the second balanced terminal and the second electrode are electrically connected via a blocking capacitor.
5. The plasma processing apparatus according to claim 1 , wherein the first electrode is supported by the vacuum container via an insulator.
6. The plasma processing apparatus according to claim 1 , wherein an insulator is arranged between the second electrode and the vacuum container.
7. The plasma processing apparatus according to claim 1 , further comprising at least one of a mechanism configured to vertically move the second electrode and a mechanism configured to rotate the second electrode.
8. The plasma processing apparatus according to claim 1 , wherein the balun includes a first coil configured to connect the first unbalanced terminal and the first balanced terminal, and a second coil configured to connect the second unbalanced terminal and the second balanced terminal.
9. The plasma processing apparatus according to claim 1 , wherein the first electrode holds a target, the second electrode holds a substrate, and the plasma processing apparatus is configured as a sputtering apparatus.
10. The plasma processing apparatus according to claim 1 , wherein the first electrode holds a substrate, and the plasma processing apparatus is configured as an etching apparatus.
11. The plasma processing apparatus according to claim 1 , wherein the first electrode holds a target, and the second electrode is arranged around the first electrode.
12. The plasma processing apparatus according to claim 1 , wherein the first electrode holds a substrate, and the second electrode is arranged around the first electrode.
13. The plasma processing apparatus according to claim 1 , wherein the first electrode holds a first target, the second electrode holds a second target, the first electrode opposes a space on a side of a substrate as a processing target via the first target, and the second electrode opposes the space via the second target.
14. The plasma processing apparatus according to claim 1 , wherein
a first high-frequency supply unit and a second high-frequency supply unit are provided, and each of the first high-frequency supply unit and the second high-frequency supply unit includes the balun, the first electrode, and the second electrode,
the first electrode of the first high-frequency supply unit holds a target, and the second electrode of the first high-frequency supply unit is arranged around the first electrode of the first high-frequency supply unit, and
the first electrode of the second high-frequency supply unit holds a substrate, and the second electrode of the second high-frequency supply unit is arranged around the first electrode of the second high-frequency supply unit.
15. The plasma processing apparatus according to claim 1 , wherein
a plurality of first high-frequency supply units and a second high-frequency supply unit are provided, and each of the plurality of first high-frequency supply units and the second high-frequency supply unit includes the balun, the first electrode, and the second electrode,
the first electrode of each of the plurality of first high-frequency supply units holds a target and, in each of the plurality of first high-frequency supply units, the second electrode is arranged around the first electrode, and
the first electrode of the second high-frequency supply unit holds a substrate, and the second electrode of the second high-frequency supply unit is arranged around the first electrode of the second high-frequency supply unit.
16. The plasma processing apparatus according to claim 1 , wherein
a first high-frequency supply unit and a second high-frequency supply unit are provided, and each of the first high-frequency supply unit and the second high-frequency supply unit includes the balun, the first electrode, and the second electrode,
the first electrode of the first high-frequency supply unit holds a first target, the second electrode of the first high-frequency supply unit holds a second target, the first electrode of the first high-frequency supply unit opposes a space on a side of a substrate as a processing target via the first target, and the second electrode of the first high-frequency supply unit opposes the space via the second target, and
the first electrode of the second high-frequency supply unit holds the substrate, and the second electrode of the second high-frequency supply unit is arranged around the first electrode of the second high-frequency supply unit.
17. The plasma processing apparatus according to claim 1 , further comprising:
a high-frequency power supply; and
an impedance matching circuit arranged between the high-frequency power supply and the balun.
18. A plasma processing apparatus comprising:
a balun including a first unbalanced terminal, a second unbalanced terminal, a first balanced terminal, and a second balanced terminal;
a grounded vacuum container;
a first electrode electrically connected to the first balanced terminal; and
a second electrode electrically connected to the second balanced terminal,
wherein when Rp represents a resistance component between the first balanced terminal and the second balanced terminal when viewing a side of the first electrode and the second electrode from a side of the first balanced terminal and the second balanced terminal, and X represents an inductance between the first unbalanced terminal and the first balanced terminal, 1.5≤X/Rp≤5000 is satisfied;
wherein the balun includes a first coil configured to connect the first unbalanced terminal and the first balanced terminal, and a second coil configured to connect the second unbalanced terminal and the second balanced terminal; and
wherein the balun further includes a third coil and a fourth coil both of which are connected between the first balanced terminal and the second balanced terminal, and the third coil and the fourth coil are configured to set, as a midpoint between a voltage of the first balanced terminal and a voltage of the second balanced terminal, a voltage of a connection node of the third coil and the fourth coil.