IP Library › Granted Patent US 11,404,848
Granted Patent B2
US 11,404,848 · App. 16/720,634 · Granted Aug 2, 2022

Vertical-cavity surface-emitting laser

Inventors: Ki Hwang Lee (Ansan-si, KR); Jeong Rae Ro (Ansan-si, KR); Byueng Su Yoo (Ansan-si, KR); Yoon Sang Jeon (Ansan-si, KR); Gong Hee Choi (Ansan-si, KR)
Assignee: Seoul Viosys Co., Ltd.
H01S5/18311H01S5/18361H01S5/423H01S5/04254H01S2301/176
View Patent ↗
Loading inventors, assignments & file history…
Monitor This Case
Get email alerts when status or documents change.
Order Certified Copies
Most orders are placed with the USPTO same day — all within 24 business hours.
Order via The Patent Place →
Pre-filled with this patent's details
Quick Facts
Patent No.
US 11,404,848
App. No.
16/720,634
Granted
Aug 2, 2022
Kind
B2
Abstract

A vertical-cavity surface-emitting laser (VCSEL) including a lower mirror, an upper mirror having an insulation region including implanted ions and an isolation region surrounded by the insulation region, an active layer interposed between the lower mirror and the upper mirror, an aperture forming layer interposed between the upper mirror and the active layer, and including an oxidation layer and a window layer surrounded by the oxidation layer, and a plurality of oxidation holes disposed in the isolation region and passing through the upper mirror and the aperture forming layer.

Claims (52)

1. A vertical-cavity surface-emitting laser (VCSEL), comprising:

a lower mirror;

an upper mirror having an insulation region including implanted ions and an isolation region surrounded by the insulation region;

an active layer interposed between the lower mirror and the upper mirror;

an aperture forming layer interposed between the upper mirror and the active layer, and including an oxidation layer and a window layer disposed in the isolation region and surrounded by the oxidation layer;

a connector disposed on the upper mirror;

a plurality of oxidation holes disposed in the isolation region and passing through the upper mirror and the aperture forming layer; and

an upper insulation layer covering the plurality of oxidation holes,

wherein at least a portion of the connector is disposed in the oxidation holes.

2. The VCSEL of claim 1 , wherein the insulation region extends from the upper mirror to a portion of the lower mirror.

3. The VCSEL of claim 1 , further comprising an ohmic contact layer disposed on the upper mirror,

wherein the ohmic contact layer includes a circular portion and protrusions protruding outwardly from the circular portion.

4. The VCSEL of claim 3 , wherein the circular portion has a partially incised ring-shape.

5. The VCSEL of claim 4 , wherein the oxidation holes are disposed between the protrusions.

6. The VCSEL of claim 5 , wherein the oxidation holes have smaller widths than those of the protrusions, respectively.

7. The VCSEL of claim 4 , further comprising:

a surface protection layer covering the ohmic contact layer and the upper mirror; and

the upper insulation layer disposed on the surface protection layer,

wherein the oxidation holes pass through the surface protection layer.

8. The VCSEL of claim 7 , further comprising a plurality of via holes passing through the upper insulation layer and the surface protection layer and exposing the ohmic contact layer,

wherein the via holes are disposed to correspond to the protrusions.

9. The VCSEL of claim 8 , further comprising a pad, wherein:

the pad is disposed in the insulation region; and

the connector extends from the pad and electrically connects the pad and the ohmic contact layer through the via holes.

10. The VCSEL of claim 1 , wherein the oxidation holes have substantially a circular or a quadrangular shape.

11. A vertical-cavity surface-emitting laser (VCSEL) comprising:

a lower mirror;

an upper mirror having an insulation region including implanted ions and an isolation region surrounded by the insulation region;

an emitter array including a plurality of emitters disposed in the isolation region;

an active layer interposed between the lower mirror and the upper mirror;

an aperture forming layer interposed between the upper mirror and the active layer, and including an oxidation layer and a window layer surrounded by the oxidation layer;

a connector disposed on the upper mirror;

a plurality of oxidation holes disposed in the isolation region and passing through the upper mirror and the aperture forming layer, each oxidation hole being disposed to correspond to each emitter of the emitter array; and

an upper insulation layer covering the plurality of oxidation holes,

wherein at least a portion of the connector is disposed in the oxidation holes.

12. The VCSEL of claim 11 , wherein the insulation region extends from the upper mirror to a portion of the lower mirror.

13. The VCSEL of claim 11 , further comprising ohmic contact layers disposed on the upper mirror to correspond to each emitter of the emitter array, respectively, wherein:

each ohmic contact layer has a circular portion and protrusions protruding outwardly from the circular portion; and

the oxidation holes are disposed between the protrusions.

14. The VCSEL of claim 13 , wherein the circular portion has a partially incised ring-shape.

15. The VCSEL of claim 13 , wherein the oxidation holes have smaller widths than those of the protrusions, respectively.

16. The VCSEL of claim 13 , further comprising:

a surface protection layer covering the ohmic contact layer and the upper mirror; and

the upper insulation layer disposed on the surface protection layer,

wherein the oxidation holes pass through the surface protection layer.

17. The VCSEL of claim 16 , further comprising a plurality of via holes passing through the upper insulation layer and the surface protection layer and exposing the ohmic contact layer,

wherein the via holes are disposed to correspond to the protrusions.

18. The VCSEL of claim 17 , further comprising a pad, wherein:

the pad is disposed in the insulation region; and

the connector extends from the pad and electrically connects the pad and the ohmic contact layer through the via holes.

19. The VCSEL of claim 18 , wherein the connector has a mesh shape including circular openings corresponding to each emitter.

20. The VCSEL of claim 11 , wherein the oxidation holes have substantially a circular or a quadrangular shape.

Assignments (1)
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Dec 19, 2019
From: LEE, KI HWANG; RO, JEONG RAE; YOO, BYUENG SU; JEON, YOON SANG; CHOI, GONG HEE
To: SEOUL VIOSYS CO., LTD.
Reel/Frame 051332/0317 →
Continuity (2)
Provisional Application 62784616 · Dec 24, 2018
Related Publication 20200203927A1 · Jun 25, 2020