Atomic layer deposition of silicon carbon nitride based material
A process for depositing a silicon carbon nitride film on a substrate can include a plurality of complete deposition cycles, each complete deposition cycle having a SiN sub-cycle and a SiCN sub-cycle. The SiN sub-cycle can include alternately and sequentially contacting the substrate with a silicon precursor and a SiN sub-cycle nitrogen precursor. The SiCN sub-cycle can include alternately and sequentially contacting the substrate with carbon-containing precursor and a SiCN sub-cycle nitrogen precursor. The SiN sub-cycle and the SiCN sub-cycle can include atomic layer deposition (ALD). The process for depositing the silicon carbon nitride film can include a plasma treatment. The plasma treatment can follow a completed plurality of complete deposition cycles.
1. A thermal atomic layer deposition (ALD) process for depositing a silicon carbon nitride film on a substrate in a reaction space, the process comprising a plurality of deposition cycles, each deposition cycle comprising:
performing a thermal SiN sub-cycle, wherein the thermal SiN sub-cycle comprises alternately and sequentially contacting the substrate with a first silicon precursor comprising a halosilane and a first nitrogen precursor; and
performing a thermal SiCN sub-cycle, wherein the SiCN sub-cycle comprises alternately and sequentially contacting the substrate with a second silicon precursor comprising a silylalkane or alkylaminosilane and a second nitrogen precursor to form the silicon carbon nitride on the substrate,
wherein the thermal ALD process is carried out at a deposition temperature of from 300 to 600° C.
2. The thermal ALD process of claim 1 , wherein the second silicon precursor comprises a substituted silylalkane.
3. The thermal ALD process of claim 2 , wherein the second silicon precursor comprises a halogen substituted silylalkane.
4. The thermal ALD process of claim 1 , wherein the first silicon precursor comprises hexachlorodisilane and the second silicon precursor comprises a halogen-substituted alkylsilane.
5. The thermal ALD process of claim 1 , wherein the first silicon precursor comprises octachlorotrisilane or hexachlorodisilane.
6. The thermal ALD process of claim 5 , wherein the first silicon precursor comprises hexachlorodisilane.
7. The thermal ALD process of claim 1 , wherein the first nitrogen precursor comprises NH 3 or N 2 H 4 .
8. The thermal ALD process of claim 1 , wherein the second nitrogen precursor comprises NH 3 or N 2 H 4 .
9. The thermal ALD process of claim 1 , wherein the first nitrogen precursor and the second nitrogen precursor are the same.
10. The thermal ALD process of claim 1 , wherein the deposition temperature is from about 400° C. to 500° C.
11. The thermal ALD process of claim 1 , wherein the thermal SiN sub-cycle additionally comprises removing excess first silicon precursor from the vicinity of the substrate after contacting the substrate with the first silicon precursor and prior to contacting the substrate with the first nitrogen precursor.
12. The thermal ALD process of claim 1 , wherein the thermal SiCN sub-cycle additionally comprises removing excess second silicon precursor from the vicinity of the substrate after contacting the substrate with the second silicon precursor and prior to contacting the substrate with the second nitrogen precursor.
13. The thermal ALD process of claim 1 , wherein the thermal SiCN sub-cycle and the thermal SiN sub-cycle are carried out at a predetermined ratio in each of the plurality of deposition cycles.
14. The thermal ALD process of claim 13 , wherein the ratio is selected to achieve a desired carbon content in the deposited silicon carbon nitride film.
15. The thermal ALD process of claim 1 , wherein the silicon carbon nitride film is formed over a three-dimensional structure having a sidewall region and a top region.
16. The thermal ALD process of claim 1 , wherein the thermal ALD process is followed by a plasma treatment of the deposited silicon carbon nitride film.
17. A thermal atomic layer deposition (ALD) process for forming a silicon carbon nitride film, comprising:
performing at least one thermal SiCN deposition cycle, the at least one SiCN deposition cycle comprising alternately and sequentially contacting the substrate with a silylalkane compound or alkylaminosilane compound and a first nitrogen precursor; and
performing at least one thermal SiN deposition cycle, the SiN deposition cycle comprising alternately and sequentially contacting the substrate with hexachlorodisilane and a second nitrogen precursor;
wherein the thermal ALD process is carried out at a deposition temperature of about 300° C. to 600° C.
18. The thermal ALD process of claim 17 , wherein the first nitrogen precursor and second nitrogen precursor each comprise one or more of NH 3 and N 2 H 2 .
19. The thermal ALD process of claim 17 , wherein the at least one thermal SiCN deposition cycle comprising alternately and sequentially contacting the substrate with a substituted silylalkane compound and a first nitrogen precursor.
20. The thermal ALD process of claim 19 , wherein the substituted silylalkane compound is a halogen substituted silylalkane.