Semiconductor device and manufacturing method thereof
In a method for manufacturing a semiconductor device by using a gate replacement technology, a gate space constituted by dielectric material portions, in which a semiconductor fin channel layer is exposed, is formed. The surfaces of the dielectric material portions are made hydrophobic. A first dielectric layer is formed on the semiconductor fin channel layer, while maintaining the surfaces of the dielectric material portions hydrophobic. A surface of the formed first dielectric layer is hydrophilic. A first conductive layer is formed over the first dielectric layer, while maintaining the surfaces of the dielectric material portions hydrophobic. A second conductive layer is formed over the first conductive layer and on the hydrophobic surfaces of the dielectric material portions, thereby filling the gate space.
1. A semiconductor device including a fin field-effect transistor (FinFET), the FinFET comprising:
a fin structure extending in a first direction;
a gate structure including a gate dielectric layer disposed over the fin structure and a gate electrode layer disposed over the gate dielectric layer, and extending in a second direction crossing the first direction;
sidewall spacers disposed on opposing side faces of the gate structure and made of an insulating material; and
a plurality of conductive underlying layers disposed between the gate dielectric layer and the gate electrode layer,
wherein each of the plurality of conductive underlying layers has a thickness variation within ±5 nm from an average thickness.
2. The semiconductor device of claim 1 , wherein gate dielectric layer includes at least one layer selected from the group consisting of HfO 2 , ZrO 2 , Al 2 O 3 , and La 2 O 3 .
3. The semiconductor device of claim 1 , wherein the gate electrode layer includes at least one selected from the group consisting of W, Co, Ni, Al, and Cu.
4. The semiconductor device of claim 1 , wherein the gate electrode layer is in direct contact with the sidewall spacers.
5. The semiconductor device of claim 1 , wherein the plurality of conductive underlying layers comprises a conductive barrier layer.
6. The semiconductor device of claim 5 , wherein the plurality of conductive underlying layers comprises a first conductive adhesion layer disposed over the conductive barrier layer.
7. The semiconductor device of claim 6 , wherein the plurality of conductive underlying layers comprises a work function adjustment layer.
8. The semiconductor device of claim 7 , wherein the plurality of conductive underlying layers comprises a second conductive adhesion layer disposed over the work function adjustment layer.
9. The semiconductor device of claim 1 , wherein each of the conductive underlying layers have a substantially uniform thickness above the fin structure.
10. The semiconductor device of claim 1 , wherein the plurality of conductive underlying layers include at least one layer selected from the group consisting of Ti, TiN, TaN, and TiSiN.
11. The semiconductor device of claim 1 , wherein the gate dielectric layer includes an interfacial layer disposed over the fin structure and a high-k dielectric layer disposed over the interfacial layer.
12. A semiconductor device including a fin field-effect transistor (FinFET), the FinFET comprising:
a fin structure-extending in a first direction;
a gate structure including a gate dielectric layer disposed over the fin structure- and a gate electrode layer disposed over the gate dielectric layer, and extending in a second direction crossing the first direction;
sidewall spacers disposed on opposing side faces of the gate structure and made of an insulating material,
wherein the gate dielectric layer has a thickness variation within ±0.5 nm from an average thickness; and
a plurality of conductive underlying layers disposed between the gate dielectric layer and the gate electrode layer,
wherein each of the plurality of conductive layers are formed of a different material.
13. The semiconductor device of claim 12 , wherein each of the conductive underlying layers have a substantially uniform thickness above the fin structure.
14. The semiconductor device of claim 12 , wherein the plurality of conductive underlying layers include at least one layer comprising Ti, TiN, TaN, or TiSiN.
15. A semiconductor device including a fin field-effect transistor (FinFET), the FinFET comprising:
a fin structure extending in a first direction;
a gate structure including a gate dielectric layer disposed over the fin structure and a gate electrode layer disposed over the gate dielectric layer, and extending in a second direction crossing the first direction,
wherein the gate electrode layer includes a main metal electrode layer;
sidewall spacers disposed on opposing side faces of the gate structure and made of an insulating material,
wherein the gate dielectric layer has a thickness variation within ±0.5 nm from an average thickness; and
a plurality of conductive underlying layers disposed between the gate dielectric layer and the gate electrode layer,
wherein the main metal electrode layer and each of the plurality of conductive layers are each in direct contact with the sidewall spacers.
16. The semiconductor device of claim 15 , wherein the main metal electrode layer comprises at least one of W, Co, Ni, Al, or Cu.
17. The semiconductor device of claim 15 , wherein the plurality of conductive underlying layers comprises a conductive barrier layer.
18. The semiconductor device of claim 17 , wherein the plurality of conductive underlying layers comprises a first conductive adhesion layer disposed over the conductive barrier layer.
19. The semiconductor device of claim 18 , wherein the plurality of conductive underlying layers comprises a work function adjustment layer.
20. The semiconductor device of claim 19 , wherein the plurality of conductive underlying layers comprises a second conductive adhesion layer disposed over the work function adjustment layer.