Memory device and test operation method thereof
The present technology includes a memory device and a method of operating the same. The memory device in which an interface circuit and a semiconductor memory are packaged together includes a centrally located region in a ball mapping region of a memory device in which data input/output pins for an operation of the interface circuit and the semiconductor memory are disposed, and a test pin region in which test pins for a test operation of the interface circuit are disposed.
1. A memory device in which an interface circuit and a semiconductor memory are packaged together, the memory device comprising:
a centrally located region in a ball mapping region of a memory device in which data input/output pins for an operation of the interface circuit and the semiconductor memory are disposed; and
a test pin region in which test pins for a test operation of the interface circuit are disposed,
wherein the interface circuit mediates command and data communication between a controller outside of the memory device and the semiconductor memory.
2. The memory device of claim 1 ,
wherein the ball mapping region of the memory device is bonded to an outer border of the memory device through a ball out process, and
wherein the test pin region is disposed on opposite sides of the centrally located region.
3. The memory device of claim 1 , wherein non-connecting pins are disposed in each of corner regions of the ball mapping region.
4. The memory device of claim 1 , wherein the data input/output pins disposed in the centrally located region are bonded to an outer border through a ball out process.
5. The memory device of claim 4 , wherein the test pins disposed in the test pin region are not bonded to the outer border.
6. A memory device in which an interface circuit and a semiconductor memory are packaged together, the memory device comprising:
a center region of a ball mapping region of a memory device in which a plurality of data input/output pins for an operation that is not a test operation of the interface circuit and the semiconductor memory are disposed; and
a first test pin region in which a plurality of first test pins for the test operation of the interface circuit are disposed,
wherein a plurality of second test pins used during the test operation of the interface circuit are disposed in the center region, and
wherein the interface circuit mediates command and data communication between a controller outside of the memory device and the semiconductor memory.
7. The memory device of claim 6 , wherein the first test pin region is disposed on left and right sides, or upper and lower sides, of the center region.
8. The memory device of claim 6 , further comprising:
a second test pin region in which a plurality of third test pins for the test operation of the semiconductor memory are disposed.
9. The memory device of claim 6 , wherein a plurality of non-connecting pins are disposed in each of four corner regions of the ball mapping region.
10. The memory device of claim 9 , wherein a plurality of fourth test pins used during the test operation of the interface circuit are disposed in each of the four corner regions of the ball mapping region.
11. The memory device of claim 10 , wherein the plurality of fourth test pins are disposed in a region adjacent to the center region and adjacent to any of the four corner regions of the ball mapping regions.
12. The memory device of claim 6 , wherein the test operation is a multi-channel test operation of the interface circuit.
13. The memory device of claim 8 , wherein the plurality of data input/output pins disposed in the center region are bonded to an outer border of the memory device through a ball out process.
14. The memory device of claim 13 , wherein the plurality of first test pins disposed in the first test pin region and the plurality of third test pins disposed in the second test pin region are not bonded to the outer border.
15. A test operation method of a memory device, the test operation method comprising:
providing a memory device including an interface circuit and a semiconductor memory connected to the interface circuit;
receiving a test command corresponding to a test operation of the interface circuit to be performed by the interface circuit;
performing a blocking operation to block signal transmission to the semiconductor memory from the interface circuit; and
performing the test operation of the interface circuit in response to the test command,
wherein the interface circuit mediates command and data communication between a controller outside of the memory device and the semiconductor memory.
16. The test operation method of claim 15 , wherein the test command includes an address corresponding to the interface circuit.
17. The test operation method of claim 15 , wherein the interface circuit receives signals through a plurality of test pins during the test operation and outputs signals generated according to a result of the test operation through the plurality test pins to an outside.