Three dimensional integrated circuit and fabrication thereof
View Patent ↗An integrated circuit structure includes a first transistor, an interconnect structure, a first dielectric layer, polycrystalline plugs, a semiconductor structure and a second transistor. The first transistor is formed on a substrate. The interconnect structure is over the first transistor. The first dielectric layer is over the interconnect structure. The polycrystalline plugs extend from a top surface of the dielectric layer into the dielectric layer. The semiconductor structure is disposed over the first dielectric layer. The second transistor is formed on the semiconductor structure.
1. An integrated circuit (IC) structure, comprising:
a first transistor formed on a substrate;
an interconnect structure over the first transistor;
a first dielectric layer over the interconnect structure;
polycrystalline plugs extending from a top surface of the first dielectric layer into the first dielectric layer;
a semiconductor structure disposed over the first dielectric layer;
a second transistor formed on the semiconductor structure; and
a spontaneous nucleation inhibition layer laterally extending along the top surface of the first dielectric layer, wherein the spontaneous nucleation inhibition layer further extends into the first dielectric layer and surrounds one of the polycrystalline plugs.
2. The IC structure of claim 1 , wherein the polycrystalline plugs have a width and a height greater than the width.
3. The IC structure of claim 1 , wherein the polycrystalline plugs have a height greater than half a thickness of the first dielectric layer.
4. The IC structure of claim 1 , wherein the polycrystalline plugs extend through the first dielectric layer to the interconnect structure.
5. The IC structure of claim 1 , wherein the polycrystalline plugs extend through the first dielectric layer and the interconnect structure to the substrate.
6. The IC structure of claim 1 , wherein the semiconductor structure is segmented into multiple regions separated by a second dielectric layer.
7. The IC structure of claim 1 , wherein the polycrystalline plugs have a round shape, a square shape or a rectangular shape from top view.
8. The IC structure of claim 1 , where the second transistor has a channel length greater than a channel length of the first transistor.
9. The IC structure of claim 1 , wherein the first transistor is of a control logic circuit of a voltage regulator circuit, and the second transistor is a power transistor of the voltage regulator circuit.
10. The IC structure of claim 1 , wherein the polycrystalline plugs are spaced apart from source and drain regions of the first transistor.
11. An IC structure, comprising:
an interconnect structure above a substrate and comprising a conductive via vertically extending above the substrate and a conductive line laterally extending above the conductive via;
a dielectric layer over the interconnect structure;
polycrystalline plugs in the dielectric layer and arranged in rows and columns from top view;
a semiconductor structure disposed over the dielectric layer;
a transistor formed on the semiconductor structure; and
a spontaneous nucleation inhibition layer surrounding one of the polycrystalline plugs, wherein the one of the polycrystalline plugs has a grain boundary terminating at the spontaneous nucleation inhibition layer.
12. The IC structure of claim 11 , wherein the semiconductor structure extends across one of the polycrystalline plugs.
13. The IC structure of claim 11 , wherein the polycrystalline plugs have bottom ends higher than a bottom surface of the dielectric layer.
14. An IC structure comprising:
a transistor formed on a substrate;
an interconnect structure over the transistor;
a dielectric layer over the interconnect structure;
a polysilicon fin having a first portion laterally extending along a top surface of the dielectric layer, a second portion extending within the dielectric layer, and grain boundaries extending within the second portion and terminating prior to reaching the first portion, wherein the second portion of the polysilicon fin has a bottom surface overlapping the dielectric layer;
a gate structure extending across the first portion of the polysilicon fin; and
source/drain regions on the first portion of the polysilicon fin and on opposite sides of the gate structure.
15. The IC structure of claim 14 , wherein the first portion of the polysilicon fin is single-crystalline.
16. The IC structure of claim 14 , wherein the second portion of the polysilicon fin is separated from a drain region of the transistor.
17. The IC structure of claim 14 , wherein the polysilicon fin has a longitudinal axis perpendicular to a longitudinal axis of the gate structure.
18. The IC structure of claim 14 , wherein from a top view the polysilicon fin has a first side extending in a direction perpendicular to a longitudinal axis of the gate structure, and a second side extending parallel with the longitudinal axis of the gate structure, and the first side is longer than the second side.
19. The IC structure of claim 14 , further comprising:
a spontaneous nucleation inhibition layer extending into the dielectric layer and surrounding the second portion of the polysilicon fin.
20. The IC structure of claim 14 , further comprising:
a spontaneous nucleation inhibition layer surrounding the second portion of the polysilicon fin, wherein the grain boundaries of the polysilicon fin terminate at the spontaneous nucleation inhibition layer.