Method and structure to improve image sensor crosstalk
Image sensors include a substrate material having a plurality of small photodiodes (SPDs) and a plurality of large photodiodes (LPDs) disposed therein. A plurality of pixel isolators is formed in the substrate material, each pixel isolator being disposed between one of the SPDs and one of the LPDs. A passivation layer is disposed on the substrate material and a buffer layer is disposed on the passivation layer. A plurality of first metal elements is disposed in the buffer layer, each first metal element being disposed over one of the pixel isolators, and a plurality of second metal elements is disposed over the plurality of first metal elements.
1. An image sensor, comprising:
a substrate material, wherein the substrate material includes a plurality of small photodiodes (SPDs) and a plurality of large photodiodes (LPDs) disposed therein, each LPD having a first full well capacity that is larger than a second full well capacity of each SPD;
a plurality of pixel isolators formed in the substrate material, each pixel isolator being disposed between one of the SPDs and one of the LPDs;
a passivation layer disposed on the substrate material;
a buffer layer disposed on the passivation layer;
a plurality of first metal elements disposed in the buffer layer, each first metal element being disposed over one of the pixel isolators;
a plurality of second metal elements disposed over the plurality of first metal elements; and
a plurality of color filters, wherein each color filter of the plurality of color filters is disposed between the second metal elements of the plurality of second metal elements, such that the plurality of second metal elements surround the plurality of color filters.
2. The image sensor of claim 1 , wherein the plurality of first metal elements has a thickness of 0.005 um to 0.010 um less than a thickness of the buffer layer, such that the buffer layer isolates the plurality of first metal elements from the passivation layer.
3. The image sensor of claim 1 , wherein the buffer layer has a first dielectric constant and the passivation layer has a second dielectric constant, wherein the first dielectric constant is lower than the second dielectric constant.
4. The image sensor of claim 2 , wherein an upper surface of the plurality of first metal elements is flush with an upper surface of the buffer layer.
5. The image sensor of claim 1 , wherein each first metal element has a width of 0.05 um to 0.25 um.
6. The image sensor of claim 5 , wherein each first metal element has a width of 0.09 um to 0.20 um.
7. The image sensor of claim 5 , wherein the width of each first metal element is the same as or less than a width of the pixel isolator over which it is disposed.
8. The image sensor of claim 1 , wherein the plurality of second metal elements has a thickness of 0.10 um to 0.50 um.
9. The image sensor of claim 1 , wherein each second metal element has a greater thickness than each first metal element.
10. The image sensor of claim 1 , where the plurality of first metal elements is shifted relative to the plurality of second metal elements.
11. The image sensor of claim 1 , wherein at least one of the plurality of first metal elements or one of the plurality of second metal elements is formed from tungsten or aluminum.
12. The image sensor of claim 1 , further comprising:
a plurality small microlenses, each small microlens being positioned over one of the SPDs; and
a plurality large microlenses, each large microlens being positioned over one of the LPDs.
13. The image sensor of claim 1 , further comprising an attenuation layer disposed at least partially over the plurality of second metal elements formed in the buffer layer.
14. The image sensor of claim 1 , wherein at least one of the plurality of first metal elements and the plurality of second metal elements forms a grid.