Wiring structure, semiconductor device and display device

1. A wiring structure comprising:

a structure body including a pattern;

a first conductive layer above the structure body;

a first insulating layer above the first conductive layer, wherein the first insulating layer has a first opening; and

a second conductive layer in the first opening,

wherein

the first conductive layer has a shape crossing an edge of a pattern of the structure body and reflecting a step of the edge of the pattern of the structure body,

the first opening of the first insulating layer overlaps the edge of the pattern of the structure body in a plan view,

the second conductive layer is connected to the first conductive layer,

the structure body is an oxide semiconductor,

the first conductive layer is a source electrode or a drain electrode of a transistor,

the first conductive layer includes a first film, a second film below the first film, and a third film below the second film,

a part of a surface of the first film on the second film side is exposed from the second film, and

the second conductive layer directly contacts the third film at the first opening;

wherein a gap is arranged between the second film and the second conductive layer; and

further comprising:

a second insulating layer below the structure body; and

a semiconductor layer below the second insulting layer, the semiconductor layer being arranged in a region not overlapping the first opening in the plan view;

wherein

the structure body includes a first oxide semiconductor layer connected to the first conductive layer,

the first insulating layer has a second opening in a region overlapping the semiconductor layer in the plan view, and

the second insulating layer has a third opening in a region overlapping the second opening in the plan view.