Light-emitting device
A light-emitting device includes a panel substrate, a light-emitting chip, and a light extracting layer. The light-emitting chip is disposed on the panel substrate. The light extracting layer covers the light-emitting chip and the panel substrate, and the light extracting layer has a side portion. Taking the position where the edge of the light-emitting chip is in contact with the panel substrate as the origin, the side portion and the origin define a circle tangential to the surface of the side portion. The circle has a radius c which satisfies the following formula (1): 1 40 H ≤ c ≤ H ( 1 ) where H is a height of the light-emitting chip. The light-emitting device disclosed herein has a light extracting layer having a very small thickness, and provides excellent light-emitting efficiency and lifetime of the light-emitting device.
1. A light-emitting device, comprising:
a panel substrate;
a light-emitting chip disposed on the panel substrate; and
a light extracting layer covering the light-emitting chip and the panel substrate, and the light extracting layer has a side portion, wherein an upper surface of the light extracting layer is in direct contact with an air, wherein the side portion of the light extracting layer extends outward from an edge of the light-emitting chip along a surface of the panel substrate, and the side portion gradually decreases in thickness outwards;
wherein taking a position where the edge of the light-emitting chip is in contact with the panel substrate as an origin, the side portion and the origin define a circle tangential to a surface of the side portion, the circle has a radius c that satisfies following formula (1):
1
40
H
≤
c
≤
H
;
(
1
)
where H is a height of the light-emitting chip.
2. The light-emitting device of claim 1 , wherein the light extracting layer has an intermediate portion, and an upper surface of the light-emitting chip and an upper surface of the intermediate portion define a thickness of 10 to 200 μm.
3. The light-emitting device of claim 1 , wherein the light extracting layer has an absorption coefficient of 0.3 to 0.00436 cm −1 for light having a wavelength of 280 nm.
4. The light-emitting device of claim 1 , wherein the light extracting layer is doped with a plurality of viscosity-adjusting particles, and the viscosity-adjusting particles includes ceramic, metal, glass, silicone, tetrafluoroethylene-perfluoropropene copolymer (PFA) or poly tetrafluoroethylene (PTFE).
5. The light-emitting device of claim 1 , further comprising:
a blocking structure disposed on the panel substrate, wherein the blocking structure is spaced from the light-emitting chip by a distance, and the distance is greater than a length of the light-emitting chip.
6. The light-emitting device of claim 5 , wherein the blocking structure has a height, and the height of the blocking structure is ¼ to 1 fold of the height of the light-emitting chip.
7. The light-emitting device of claim 5 , wherein the blocking structure comprises metal, ceramic or plastic.
8. The light-emitting device of claim 5 , wherein the blocking structure comprises aluminum, gold, silver, silicon, or a combination thereof.
9. The light-emitting device of claim 5 , wherein the blocking structure has a profile of a circle or a polygon in a plan view.
10. The light-emitting device of claim 1 , further comprising:
a glue-phobic layer disposed on the panel substrate, wherein the glue-phobic layer is spaced from the light-emitting chip by a distance, and the distance is greater than a length of the light-emitting chip.
11. The light-emitting device of claim 10 , wherein the glue-phobic layer comprises polytetrafluoroethylene.