Structure for bonding and electrical contact for direct bond hybridization
A direct bond hybridization (DBH) method is provided. The DBH method includes preparing a first underlying layer, a first contact layer disposed on the first underlying layer and a first contact electrically communicative with the first underlying layer and protruding through the first contact layer, preparing a second underlying layer, a second contact electrically communicative with the second underlying layer and formed of softer material than the first contact and a second contact layer disposed on the second underlying layer and defining an aperture about the second contact and a moat at least partially surrounding the second contact and bonding the first and second contact layers whereby the first contact contacts the second contact such that the second contact deforms and expands into the moat.
1. A direct bond hybridization (DBH) method, comprising:
preparing a first underlying layer, a first contact layer disposed on the first underlying layer and a first contact electrically communicative with the first underlying layer and protruding through the first contact layer;
preparing a second underlying layer, a second contact electrically communicative with the second underlying layer and formed of softer material than the first contact and a second contact layer disposed on the second underlying layer and defining an aperture about the second contact and a moat at least partially surrounding the second contact; and
bonding the first and second contact layers whereby the first contact contacts the second contact such that the second contact deforms and expands into the moat.
2. The DBH method according to claim 1 , wherein the first and second contact layers comprise thermal oxide.
3. The DBH method according to claim 1 , wherein the bonding comprises isostatic pressing (IP).
4. The DBH method according to claim 1 , wherein no portion of the second contact intervenes between the first and second contact layers during the bonding.
5. The DBH method according to claim 1 , wherein the second underlying layer comprises a device layer.
6. The DBH method according to claim 5 , wherein the device layer comprises a read-out integrated circuit (ROIC).
7. The DBH method according to claim 5 , wherein:
the first contact is plural in number, and
the aperture and the second contact are both plural in number in correspondence with a number of the plural first contacts.
8. The DBH method according to claim 5 , wherein the second contact comprises Indium (In).
9. The DBH method according to claim 8 , wherein the first contact is non-compressible as compared with the second contact.
10. A direct bond hybridization (DBH) method, comprising:
preparing a first underlying layer, a planar first contact layer disposed on a planar surface of the first underlying layer and a first contact electrically communicative with the first underlying layer and protruding through the planar first contact layer;
preparing a second underlying layer, a second contact electrically communicative with the second underlying layer and formed of softer material than the first contact and a planar second contact layer disposed on a planar surface of the second underlying layer and defining an aperture about the second contact and a moat at least partially surrounding the second contact in a plane of the planar second contact layer, the moat being characterized in that interior facing surfaces of the planar second contact layer are separated from sides of the second contact in the plane of the planar second contact layer; and
bonding the first and second contact layers whereby the first contact contacts the second contact such that the second contact deforms and expands into the moat in the plane of the second planar layer.
11. The DBH method according to claim 10 , wherein the first and second contact layers comprise thermal oxide.
12. The DBH method according to claim 10 , wherein the bonding comprises isostatic pressing (IP).
13. The DBH method according to claim 10 , wherein no portion of the second contact intervenes between the first and second contact layers during the bonding.
14. The DBH method according to claim 10 , wherein the second underlying layer comprises a device layer.
15. The DBH method according to claim 14 , wherein the device layer comprises a read-out integrated circuit (ROIC).
16. The DBH method according to claim 14 , wherein:
the first contact is plural in number, and
the aperture and the second contact are both plural in number in correspondence with a number of the plural first contacts.
17. The DBH method according to claim 14 , wherein the second contact comprises Indium (In).
18. The DBH method according to claim 17 , wherein the first contact is non-compressible as compared with the second contact.
19. A direct bond hybridization (DBH) method, comprising:
preparing a first underlying layer, a planar first contact layer disposed on a planar surface of the first underlying layer and a first contact electrically communicative with the first underlying layer and protruding through the planar first contact layer;
preparing a second underlying layer, a second contact electrically communicative with the second underlying layer and formed of softer material than the first contact and a planar second contact layer disposed on a planar surface of the second underlying layer and defining an aperture and a moat about and surrounding the second contact in a plane of the planar second contact layer at which interior facing surfaces of the planar second contact layer are separated from sides of the second contact in the plane of the planar second contact layer; and
bonding the first and second contact layers whereby the first contact contacts the second contact such that the second contact deforms and expands into the moat in the plane of the second planar layer.