Semiconductor memory device and method for manufacturing same
A semiconductor memory device includes a semiconductor substrate, a first insulating film provided above the semiconductor substrate, a first conductive film provided above the first insulating film, a plurality of first electrode films provided above the first conductive film and stacked to be separated from each other, a semiconductor member extending in a stacking direction of the plurality of first electrode films, and a charge storage member provided between the semiconductor member and one of the plurality of first electrode films. The first conductive film includes a main portion disposed at least below the plurality of first electrode films, and a fine line portion extending from the main portion toward an end surface side of the semiconductor substrate. A width of the fine line portion is narrower than a width of the main portion.
1. A semiconductor memory device, comprising:
a first conductive film;
a second conductive film provided in a first direction of the first conductive film, the first direction being parallel to a surface of the first conductive film;
an insulating member provided between the first conductive film and the second conductive film;
a plurality of first electrode films separated from each other in a second direction crossing the first direction, the plurality of first electrode films being provided above the first conductive film;
a semiconductor member provided directly above the first conductive film and extending through the plurality of first electrode films in the second direction, the semiconductor member having one end electrically connected to the first conductive film; and
a charge storage member provided between the semiconductor member and the plurality of first electrode films.
2. The semiconductor memory device according to claim 1 , wherein
the first conductive film includes
a main portion disposed directly below the plurality of first electrode films, and
a fine line portion extending from the main portion toward the second conductive film, a width of the fine line portion being narrower than a width of the main portion, and
a side surface of the second conductive film extends in a direction toward the fine line portion and is positioned on an extension plane of a side surface of the fine line portion, the side surface of the fine line portion extending in a direction toward the second conductive film.
3. The semiconductor memory device according to claim 1 , wherein
the first conductive film includes:
a first metal layer; and
a first silicon layer stacked with the first metal layer.
4. The semiconductor memory device according to claim 1 , wherein
the second conductive film includes:
a second metal layer; and
a second silicon layer stacked with the second metal layer.
5. The semiconductor memory device according to claim 1 , wherein
the first conductive film includes:
a first metal layer; and
a first silicon layer stacked with the first metal layer,
the second conductive film includes:
a second metal layer; and
a second silicon layer stacked with the second metal layer,
a thickness of the first metal layer is equal to a thickness of the second metal layer, and
a thickness of the first silicon layer is equal to a thickness of the second silicon layer.
6. The semiconductor memory device according to claim 1 , further comprising an insulating film provided at a periphery of the plurality of first electrode films, wherein
the insulating member is provided in the insulating film.
7. The semiconductor memory device according to claim 1 , wherein the insulating member extends in the second direction.
8. The semiconductor memory device according to claim 1 , wherein the insulating member contacts the first conductive film and the second conductive film.
9. A semiconductor memory device, comprising:
a first conductive film;
a second conductive film provided in a first direction of the first conductive film;
an insulating member provided between the first conductive film and the second conductive film;
a plurality of first electrode films provided above the first conductive film and separated from each other in a second direction crossing the first direction;
a semiconductor member provided directly above the first conductive film and extending through the plurality of first electrode films in the second direction, the semiconductor member having one end electrically connected to the first conductive film; and
a charge storage member provided between the semiconductor member and the plurality of first electrode films,
the first conductive film including
a main portion disposed at least below the plurality of first electrode films, and
a fine line portion extending from the main portion toward the second conductive film, a width of the fine line portion being narrower than a width of the main portion, and
a side surface of the second conductive film extending in a direction toward the fine line portion and being positioned on an extension plane of a side surface of the fine line portion, the side surface of the fine line portion extending in a direction toward the second conductive film.
10. A semiconductor memory device, comprising:
a first conductive film;
a second conductive film provided in a first direction of the first conductive film;
an insulating member provided between the first conductive film and the second conductive film, the insulating member contacting the first conductive film and the second conductive film;
a plurality of first electrode films provided above the first conductive film and separated from each other in a second direction crossing the first direction;
a semiconductor member provided directly above the first conductive film and extending through the plurality of first electrode films in the second direction, the semiconductor member having one end electrically connected to the first conductive film; and
a charge storage member provided between the semiconductor member and the plurality of first electrode films.