Using three or more masks to define contact-line-blocking components in FinFET SRAM fabrication
A plurality of gate stacks is formed over a substrate. The gate stacks are surrounded by a dielectric structure. A plurality of contact-line-blocking patterns is formed over the dielectric structure. The contact-line-blocking patterns are formed using three or more lithography masks. A plurality of trenches is formed in the dielectric structure. The contact-line-blocking patterns serve as protective masks for the dielectric structure to prevent trenches from being formed in portions of the dielectric structure underneath the contact-line-blocking patterns. The trenches are filled with a conductive material to form a plurality of contact lines of the SRAM device.
1. A method, comprising:
defining, via a first lithography mask, a first contact-line-blocking pattern;
defining, via a second lithography mask different from the first lithography mask, a second contact-line-blocking pattern different from the first contact-line-blocking pattern;
forming a first contact-line and a second contact-line, wherein the first contact-line-blocking pattern prevents the first contact-line and the second contact-line from being formed as a single contact-line; and
forming a third contact-line and a fourth contact-line, wherein the second contact-line-blocking pattern prevents the third contact-line and the fourth contact-line from being formed as a single contact-line.
2. The method of claim 1 , wherein the first contact-line, the second contact-line, the third contact-line, and the fourth contact-line are contact-lines of a Static Random Access Memory (SRAM).
3. The method of claim 2 , wherein:
the forming the first contact-line and the second contact-line comprises forming a first Vcc contact-line as the first contact-line and forming a Vss contact-line as the second contact-line; and
the forming the third contact-line and the fourth contact-line comprises forming a second Vcc contact-line as the third contact-line and forming a bit-line contact-line as the fourth contact-line.
4. The method of claim 1 , wherein the forming the first contact-line and the second contact-line and the forming the third contact-line and the fourth contact-line are performed simultaneously.
5. The method of claim 1 , wherein the first contact-line-blocking pattern and the second contact-line-blocking pattern are defined to have different dimensions in a top view.
6. The method of claim 1 , wherein:
the first contact-line, the second contact-line, the third contact-line, and the fourth contact-line are formed such that:
the first contact-line and the second contact-line are separated from one another in a first direction;
the third contact-line and the fourth contact-line are separated from one another in the first direction; and
the first contact-line and the second contact-line are collectively separated from the third contact-line and the fourth contact-line in a second direction different from the first direction.
7. The method of claim 6 , further comprising: forming a plurality of elongated fin structures that each extend in the second direction in a top view.
8. The method of claim 6 , further comprising:
defining, via a third lithography mask different from the first lithography mask and the second lithography mask, a third contact-line-blocking pattern different from the first contact-line-blocking pattern and the second contact-line-blocking pattern; and
forming a fifth contact-line and a sixth contact-line, wherein the third contact-line-blocking pattern prevents the fifth contact-line and the sixth contact-line from being formed as a single contact-line.
9. The method of claim 8 , wherein the third contact-line-blocking pattern is located between the first contact-line-blocking pattern and the second contact-line-blocking pattern in the second direction.
10. The method of claim 1 , further comprising: forming a dielectric structure over a substrate, wherein the first contact-line, the second contact-line, the third contact-line, and the fourth contact-line are formed in the dielectric structure.
11. The method of claim 10 , wherein the first contact-line-blocking pattern and the second contact-line-blocking pattern are each formed over the dielectric structure.
12. The method of claim 1 , wherein the defining the first contact-line-blocking pattern or the defining the second contact-line-blocking pattern comprises doping a silicon layer.
13. The method of claim 1 , further comprising:
receiving a layout design for the first lithography mask, the layout design containing a pattern corresponding to the first contact-line-blocking pattern; and
adjusting the layout design at least in part by resizing or repositioning the pattern of the layout design.
14. A method, comprising:
forming a dielectric structure over a substrate;
forming a layer over the dielectric structure;
patterning, using a first lithography mask, a first portion of the layer into a first contact-line-blocking pattern;
patterning, using a second lithography mask different from the first lithography mask, a second portion of the layer into a second contact-line-blocking pattern;
forming a first trench and a second trench in the dielectric structure, wherein the first trench and the second trench are formed on opposites sides of the first contact-line-blocking pattern;
forming a third trench and a fourth trench in the dielectric structure, wherein the third trench and the fourth trench are formed on opposites sides of the second contact-line-blocking pattern; and
filling the first trench, the second trench, the third trench, and the fourth trench with a conductive material, thereby forming a first contact-line, a second contact-line, a third contact-line, and a fourth contact-line, respectively.
15. The method of claim 14 , wherein:
the first trench and the second trench are prevented from being joined together by a first portion of the dielectric structure that is located below, and aligned with, the first contact-line-blocking pattern; and
the third trench and the fourth trench are prevented from being joined together by a second portion of the dielectric structure that is located below, and aligned with, the second contact-line-blocking pattern.
16. The method of claim 14 , wherein:
the forming the layer comprises forming a silicon layer as the layer;
the patterning the first portion of the layer comprises applying dopants to the first portion of the layer; and
the patterning the second portion of the layer comprises applying dopants to the second portion of the layer.
17. The method of claim 14 , wherein:
the first contact-line includes a first Vcc contact of a Static Random Access Memory (SRAM);
the second contact-line includes a Vss contact of the SRAM;
the third contact-line includes a second Vcc contact of the SRAM; and
the fourth contact-line includes a bit-line contact of the SRAM.
18. The method of claim 14 , wherein:
the first trench, the second trench, the third trench, and the fourth trench are each formed to extend in a first direction; and
the first contact-line-blocking pattern and the second contact-line-blocking pattern are spaced apart from each other in a second direction different from the first direction.
19. A method, comprising:
forming a dielectric structure over a substrate;
forming a mask layer over the dielectric structure;
patterning, using a first lithography mask, a first portion of the mask layer into a first mask pattern;
patterning, using a second lithography mask different from the first lithography mask, a second portion of the mask layer into a second mask pattern;
etching a first trench, a second trench, a third trench, and a fourth trench in the dielectric structure, wherein the first mask pattern prevents a merging of the first trench and the second trench, and wherein the second mask pattern prevents a merging of the third trench and the fourth trench; and
forming a plurality of contacts of a Static Random Access Memory (SRAM) by filling the first trench, the second trench, the third trench, and the fourth trench with a metal material, wherein the plurality of contacts are selected from the group consisting of: a Vcc contact, a Vss contact, a bit-line contact, and a node contact.
20. The method of claim 19 , wherein:
the first trench, the second trench, the third trench, and the fourth trench each extends in a first direction; and
the first mask pattern and the second mask pattern are separated from each other in a second direction in a top view, the second direction being perpendicular to the first direction.