Semiconductor package
A package-on-package type package includes a lower semiconductor package and an upper semiconductor package. The lower semiconductor package includes a first semiconductor device including a through electrode, a second semiconductor device disposed on the first semiconductor device and including a second through electrode electrically connected to the first through electrode, a first molding member covering a sidewall of at least one of the first semiconductor device and the second semiconductor device, a second molding member covering a sidewall of the first molding member, and an upper redistribution layer disposed on the second semiconductor device and electrically connected to the second through electrode.
1. A semiconductor package comprising:
a lower semiconductor package; and
an upper semiconductor package disposed on the lower semiconductor package,
wherein the lower semiconductor package includes:
a first semiconductor device including a first through electrode;
a second semiconductor device disposed on the first semiconductor device and including a second through electrode electrically connected to the first through electrode;
a first molding member covering a sidewall of at least one of the first semiconductor device and the second semiconductor device;
a second molding member contacting a sidewall of the first molding member; and
an upper redistribution layer disposed on the second semiconductor device and electrically connected to the second through electrode, and
wherein the upper semiconductor package includes:
a third semiconductor device; and
a connection terminal electrically connected to the third semiconductor device and the upper redistribution layer.
2. The semiconductor package according to claim 1 , wherein a material of the first molding member is different from a material of the second molding member.
3. The semiconductor package according to claim 1 , wherein an upper surface of the second through electrode, an upper surface of the first molding member, and an upper surface of the second molding member are coplanar with one another.
4. The semiconductor package according to claim 1 , wherein the lower semiconductor package further includes:
a first pad disposed on the first through electrode;
a second pad disposed under the second through electrode;
a connection bump disposed between the first pad and the second pad; and
a connection layer disposed between the first semiconductor device and the second semiconductor device and covering the first pad, the second pad, and the connection bump.
5. The semiconductor package according to claim 1 , wherein a sidewall of the second semiconductor device is positioned further inward than a sidewall of the first semiconductor device,
the first molding member is disposed on the first semiconductor device and covers the second semiconductor device,
the sidewall of the first molding member is aligned with the sidewall of the first semiconductor device, and
the second molding member covers the sidewall of the first semiconductor device.
6. The semiconductor package according to claim 1 , wherein the upper semiconductor package further includes:
a third molding member covering a sidewall of the third semiconductor device; and
a heat sink disposed on the third molding member, and
wherein a sidewall of the third molding member is aligned with a sidewall of the lower semiconductor package.
7. The semiconductor package according to claim 1 , wherein the lower semiconductor package further includes:
a first protection layer disposed on the first semiconductor device and covering an upper portion of the first through electrode; and
a second protection layer disposed on the second semiconductor device and covering an upper portion of the second through electrode,
wherein an upper surface of the second protection layer is coplanar with an upper surface of the second through electrode.
8. A semiconductor package according comprising:
a lower package; and
an upper package disposed on the lower package,
wherein the lower package includes:
a first semiconductor device including a first through electrode;
a second semiconductor device disposed on the first semiconductor device and including a second through electrode electrically connected to the first through electrode;
a first molding member covering a sidewall of at least one of the first semiconductor device and the second semiconductor device;
a second molding member covering a sidewall of the first molding member;
an upper redistribution layer disposed on the second semiconductor device and electrically connected to the second through electrode;
a lower redistribution layer disposed below the first semiconductor device and electrically connected to the first through electrode; and
an external connection terminal electrically connected to the lower redistribution layer,
wherein the upper package includes:
a third semiconductor device; and
a first connection terminal electrically connected to the third semiconductor device and the upper redistribution layer, and
wherein an upper surface of the second through electrode is coplanar with a lower surface of the upper redistribution layer.
9. The semiconductor package according to claim 8 , wherein each of the first and second molding members is free of a through electrode.
10. The semiconductor package according to claim 8 , wherein the first molding member contacts the second molding member, and
a sidewall of the second molding member is aligned with a sidewall of the lower redistribution layer.
11. The semiconductor package according to claim 8 , wherein a sidewall of the second semiconductor device is located further inward than a sidewall of the first semiconductor device,
the first molding member is disposed on the first semiconductor device and covers the sidewall of the second semiconductor device,
the sidewall of the first molding member is aligned with the sidewall of the first semiconductor device, and
the second molding member covers the sidewall of the first semiconductor device.
12. The semiconductor package according to claim 8 , wherein the upper package further includes:
a third molding member that covers the third semiconductor device; and
a heat sink disposed on the third molding member and the third semiconductor device.
13. The semiconductor package according to claim 8 , wherein a sidewall of the upper package is located further inward than a sidewall of the second molding member.
14. A semiconductor package comprising:
a first semiconductor device including a first through electrode;
a second semiconductor device disposed on the first semiconductor device and including a second through electrode electrically connected to the first through electrode;
a first molding member covering a sidewall of at least one of the first semiconductor device and the second semiconductor device, wherein the first molding member is spaced apart from all through electrodes;
an upper redistribution layer disposed on the second semiconductor device and including an upper redistribution pattern electrically connected to the second through electrode; and
a third semiconductor device disposed on the upper redistribution layer and electrically connected to the upper redistribution pattern.
15. The semiconductor package according to claim 14 , further comprising:
a circuit substrate including an upper pad and a lower pad electrically connected to the upper pad; and
an external connection terminal electrically connected to the lower pad.
16. The semiconductor package according to claim 15 , further comprising a second molding member covering a sidewall of the first molding member and contacting the first molding member,
wherein a sidewall of the second molding member is aligned with a sidewall of the circuit substrate.
17. The semiconductor package according to claim 14 , further comprising:
a lower redistribution layer disposed below the first semiconductor device and electrically connected to the first through electrode; and
an external terminal electrically connected to the lower redistribution layer.
18. The semiconductor package according to claim 14 , further comprising:
a first pad disposed on the first through electrode;
a second pad disposed under the second through electrode;
a connection bump disposed between the first pad and the second pad; and
a connection layer disposed between the first semiconductor device and the second semiconductor device, and covering the first pad, the second pad, and the connection bump.
19. The semiconductor package according to claim 14 , wherein a sidewall of the second semiconductor device is located further inward than a sidewall of the first semiconductor device,
the first molding member is disposed on the first semiconductor device and covering the sidewall of the second semiconductor device, and
the sidewall of the first molding member is aligned with the sidewall of the first semiconductor device.
20. The semiconductor package according to claim 8 ,
wherein the upper redistribution layer comprises:
a redistribution pattern that is electrically connected to the second through electrode; and
an insulation region that is on the redistribution pattern, and
wherein an upper surface of the first molding member contacts only the insulation region of the upper redistribution layer.