Light emitting diode of improved light extraction rate

1. A light emitting diode, comprising:

a first type semiconductor layer;

an active layer disposed on the first type semiconductor layer;

a second type semiconductor layer disposed on the active layer, the second type semiconductor layer including a first surface and a second surface opposite thereto, wherein the first surface faces the active layer, and the second surface has a first arithmetic mean roughness;

a patterned electrode layer disposed on the second surface of the second type semiconductor layer and exposing a portion of the second type semiconductor layer;

a planarization layer disposed on the exposed portion of the second type semiconductor layer, wherein the planarization layer includes an opening exposing a portion of the patterned electrode layer, and the planarization layer includes a third surface and a fourth surface opposite to each other, wherein the third surface contacts the second surface of the second type semiconductor layer, and the fourth surface has a second arithmetic mean roughness that is less than the first arithmetic mean roughness;

a reflective layer contacting the fourth surface of the planarization layer, wherein the reflective layer is continuously and integrally formed on the planarization layer and the patterned electrode layer; and

an insulating layer, covering the reflective layer, the planarization layer, sidewalls of the first type semiconductor layer, the active layer, and sidewalls of the second type semiconductor layer.

2. The light emitting diode of claim 1 , wherein the patterned electrode layer comprises a plurality of electrodes, and each of the plurality of electrodes is spaced apart from each other.

3. The light emitting diode of claim 1 , further comprising a first contact and a second contact, wherein the first contact is electrically connected to the first type semiconductor layer, and the second contact is electrically connected to the reflective layer.

4. The light emitting diode of claim 1 , wherein a maximum height roughness of the second surface is greater than 100 Å.

5. The light emitting diode of claim 1 , wherein the second arithmetic mean roughness of the fourth surface is less than 3 Å.

6. The light emitting diode of claim 1 , wherein the reflective layer covers the patterned electrode layer and the planarization layer.

7. The light emitting diode of claim 1 , wherein the reflective layer is electrically connected to the patterned electrode layer through the opening.

8. The light emitting diode of claim 1 , wherein the planarization layer comprises an insulating oxide or nitride.

9. The light emitting diode of claim 1 , wherein the reflective layer comprises a metal reflective material.

10. The light emitting diode of claim 1 , wherein the patterned electrode layer comprises a light-transmitting conductive oxide.

11. The light emitting diode of claim 1 , wherein:

the reflective layer comprises a metal reflective material;

the opening of the planarization layer is defined by sidewalls of the planarization layer; and

the reflective layer is filled in the opening of the planarization layer, covers and directly contacts the portion of the patterned electrode layer exposed by the opening of the planarization layer, and covers and directly contacts the sidewalls of the planarization layer that define the opening of the planarization layer.

12. The light emitting diode of claim 1 , wherein the reflective layer covers and directly contacts an entirety of the sidewalls of the planarization layer.

13. The light emitting diode of claim 3 , wherein the first contact is below an interface between the first type semiconductor layer and the active layer, and the second contact is above the interface between the first type semiconductor layer and the active layer.