Light-emitting diode structure with reflective layer for improving luminous efficiency thereof
A light-emitting diode structure includes a first type semiconductor layer, a light-emitting layer, a second type semiconductor layer, a reflective layer, and an ohmic contact layer. The light-emitting layer is disposed under the first type semiconductor layer. The second type semiconductor layer is disposed under the light-emitting layer, wherein the second type semiconductor layer includes a plurality of recesses which are recessed from a lower surface of the second type semiconductor layer toward the light-emitting layer. The reflective layer is disposed in the recesses. The ohmic contact layer is disposed under the lower surface of the second type semiconductor layer and surrounds the recesses. The light-emitting diode structure can increase the luminous efficiency greatly.
1. A light-emitting diode structure, comprising:
a first type semiconductor layer;
a light-emitting layer disposed under the first type semiconductor layer;
a second type semiconductor layer disposed under the light-emitting layer, wherein the second type semiconductor layer comprises a plurality of recesses which are recessed from a lower surface of the second type semiconductor layer toward the light-emitting layer;
a reflective layer disposed in the recesses;
an ohmic contact layer disposed under the lower surface of the second type semiconductor layer and surrounding the recesses;
an electrical connection layer covering the reflective layer and the ohmic contact layer; and
an electrode in contact with the electrical connection layer.
2. The light-emitting diode structure of claim 1 , wherein the recesses are filled with the reflective layer, and a lower surface of the reflective layer is substantially flush with the lower surface of the second type semiconductor layer.
3. The light-emitting diode structure of claim 1 , wherein the reflective layer comprises a first portion and a second portion, the recesses are filled with the first portion, and the second portion is located under the first portion and extends to cover a portion of the ohmic contact layer.
4. The light-emitting diode structure of claim 1 , further comprising a substrate located under the second type semiconductor layer.
5. A light-emitting diode structure, comprising:
a first type semiconductor layer;
a light-emitting layer disposed under the first type semiconductor layer;
a second type semiconductor layer disposed under the light-emitting layer, wherein the second type semiconductor layer comprises a plurality of protruding portions which are protruded from a lower surface of the second type semiconductor layer in a direction away from the light-emitting layer;
an ohmic contact layer disposed under the protruding portions;
a reflective layer disposed under the lower surface of the second type semiconductor layer and surrounding the protruding portions, the reflective layer at least covering an entirety of the lower surface of the second type semiconductor layer except for portions of the lower surface of the second type semiconductor layer having the protruding portions thereon and including two stacked thin films having different refractive indices than each other;
an electrical connection layer covering the reflective layer and the ohmic contact layer; and
an electrode in contact with the electrical connection layer.
6. The light-emitting diode structure of claim 5 , wherein a lower surface of the reflective layer is substantially flush with a lower surface of each of the protruding portions.
7. The light-emitting diode structure of claim 5 , wherein the reflective layer comprises a first portion and a second portion, the second portion is located under the first portion and extends to cover a portion of the ohmic contact layer.
8. The light-emitting diode structure of claim 5 , further comprising a substrate under the second type semiconductor layer.
9. The light-emitting diode structure of claim 1 , wherein a maximum vertical dimension of the reflective layer is less than a minimum vertical dimension of the second type semiconductor layer.
10. The light-emitting diode structure of claim 5 , wherein a maximum vertical dimension of the reflective layer is less than a minimum vertical dimension of the second type semiconductor layer.
11. A light-emitting diode structure, comprising:
a first type semiconductor layer;
a light-emitting layer disposed under the first type semiconductor layer;
a second type semiconductor layer disposed under the light-emitting layer, wherein the second type semiconductor layer comprises a plurality of protruding portions which are protruded from a lower surface of the second type semiconductor layer in a direction away from the light-emitting layer;
an ohmic contact layer disposed under the protruding portions;
a reflective layer disposed under the lower surface of the second type semiconductor layer and laterally surrounding an entirety of the protruding portions, the reflective layer including two stacked thin films having different refractive indices than each other;
an electrical connection layer covering the reflective layer and the ohmic contact layer; and
an electrode in contact with the electrical connection layer.
12. The light-emitting diode structure of claim 11 , wherein a lower surface of the reflective layer is substantially flush with a lower surface of each of the protruding portions.
13. The light-emitting diode structure of claim 11 , wherein the reflective layer comprises a first portion and a second portion, the second portion is located under the first portion and extends to cover a portion of the ohmic contact layer.
14. The light-emitting diode structure of claim 11 , further comprising a substrate under the second type semiconductor layer.
15. The light-emitting diode structure of claim 11 , wherein a maximum vertical dimension of the reflective layer is less than a minimum vertical dimension of the second type semiconductor layer.