Method for manufacturing semiconductor device
A manufacturing method of a semiconductor device includes: forming a second conductive type layer over a first conductive type layer; and forming a trench by etching the second conductivity type layer by a plasma etching process to expose the first conductivity type layer. The etching of the second conductivity type layer includes: performing a spectroscopic analysis of light emission of plasma; detecting an interface between the first conductivity type layer and the second conductivity type layer based on a change in emission intensity; and stopping the etching of the second conductivity type layer when an end point is determined based on a detection result of the interface.
1. A method for manufacturing a semiconductor device comprising:
preparing a stacking structure by forming a second conductive type layer over at least a first conductive type layer, by epitaxial growth, which is made of a same kind of semiconductor material as the second conductive type layer; and
forming a trench by etching the second conductivity type layer by a plasma etching process to penetrate the second conductivity type layer and to expose the first conductivity type layer, wherein:
the etching of the second conductivity type layer by the plasma etching process includes performing a spectroscopic analysis of light emission of plasma generated in the plasma etching process using a plasma spectrometer;
the etching of the second conductivity type layer by the plasma etching process includes detecting an interface between the first conductivity type layer and the second conductivity type layer based on a change in emission intensity of at least one of an additive in the first conductivity type layer and another additive in the second conductivity type layer at a predetermined wavelength; and
the etching of the second conductivity type layer by the plasma etching process includes stopping the etching of the second conductivity type layer when an end point is determined based on a detection result of the interface.
2. The method for manufacturing the semiconductor device according to claim 1 , wherein:
the first conductivity type layer and the second conductivity type layer are made of a group IV semiconductor material.
3. The method for manufacturing the semiconductor device according to claim 1 , wherein:
the first conductivity type layer and the second conductivity type layer have a thickness in a range between 0.1 μm and 100 μm.
4. The method for manufacturing the semiconductor device according to claim 1 , wherein:
at least one of the first conductivity type layer and the second conductivity type layer has an impurity concentration of 1×10 16 /cm 3 or more.
5. The method for manufacturing the semiconductor device according to claim 1 , wherein:
both the first conductivity type layer and the second conductivity type layer have an impurity concentration of 1×10 17 /cm 3 or more; and
the method further comprising:
forming an undoped layer having a thickness of 0.1 μm or more and 1.0 μm or less and an impurity concentration of 1×10 16 /cm 3 or less on the first conductivity type layer; and
forming the second conductivity type layer on the undoped layer.
6. The method for manufacturing the semiconductor device according to claim 1 , wherein:
both the first conductivity type layer and the second conductivity type layer have an impurity concentration of 1×10 16 /cm 3 or less; and
the method further comprising:
forming a high concentration layer having a thickness of 0.1 μm or more and 1.0 μm or less and an impurity concentration of 1×10 17 /cm 3 or more on the first conductivity type layer; and
forming the second conductivity type layer on the high concentration layer.