Semiconductor material and semiconductor device having a metal element and nitrogen
A semiconductor material is an oxide including a metal element and nitrogen, in which the metal element is indium (In), an element M (M is aluminum (Al), gallium (Ga), yttrium (Y), or tin (Sn)), and zinc (Zn) and nitrogen is taken into an oxygen vacancy or bonded to an atom of the metal element.
1. A semiconductor material that is an oxide comprising a plurality of metal elements and nitrogen,
wherein the plurality of metal elements are indium, an element M, and zinc,
wherein the element M is aluminum, gallium, yttrium, or tin, and
wherein the nitrogen is taken into an oxygen vacancy or bonded to an atom of one of the plurality of metal elements.
2. The semiconductor material according to claim 1 ,
wherein a carrier concentration of the oxide is lower than 5×10 17 cm −3 .
3. The semiconductor material according to claim 1 ,
wherein a proportion of the number of atoms of the nitrogen in the oxide is lower than 1.2 atomic %.
4. The semiconductor material according to claim 1 ,
wherein no structural change in the oxide is observed when the oxide is irradiated with an electron and when a cumulative electron dose of the electron is less than or equal to 3.6×10 8 e − /nm 2 .
5. The semiconductor material according to claim 1 ,
wherein the oxide comprises cerium.
6. A semiconductor device comprising a transistor,
wherein the transistor comprises:
an oxide;
a first insulator over the oxide; and
a conductor over the first insulator,
wherein the oxide comprises a plurality of metal elements and nitrogen,
wherein the plurality of metal elements are indium, an element M, and zinc,
wherein the element M is aluminum, gallium, yttrium, or tin, and
wherein the nitrogen is taken into an oxygen vacancy or bonded to an atom of one of the plurality of metal elements.
7. The semiconductor device according to claim 6 ,
wherein a carrier concentration of the oxide is lower than 5×10 17 cm −3 .
8. The semiconductor device according to claim 6 ,
wherein a proportion of the number of atoms of the nitrogen in the oxide is lower than 1.2 atomic %.
9. A semiconductor device comprising a transistor,
wherein the transistor comprises a first oxide, a second oxide, a first conductor, a second conductor, a third conductor, a first insulator, and a second insulator,
wherein the first oxide comprises a first region, a second region, and a third region in contact with the first region and the second region,
wherein the first region overlaps with the first conductor,
wherein the second region overlaps with the second conductor,
wherein the third region comprises a region overlapping with the third conductor with the first insulator and the second oxide positioned therebetween,
wherein the second insulator comprises an opening that exposes a side surface of the first conductor, a side surface of the second conductor, and the third region,
wherein the third conductor is placed in the opening with the second oxide and the first insulator positioned therebetween,
wherein the first oxide comprises a plurality of metal elements and nitrogen,
wherein the plurality of metal elements are indium, an element M, and zinc,
wherein the element M is aluminum, gallium, yttrium, or tin, and
wherein the nitrogen is taken into an oxygen vacancy or bonded to an atom of one of the plurality of metal elements.
10. The semiconductor device according to claim 9 ,
wherein the first oxide comprises cerium.
11. The semiconductor device according to claim 9 ,
wherein a carrier concentration of the first oxide is lower than 5×10 17 cm −3 .
12. The semiconductor device according to claim 9 ,
wherein a proportion of the number of atoms of the nitrogen in the first oxide is lower than 1.2 atomic %.
13. The semiconductor device according to claim 9 ,
wherein no structural change in the first oxide is observed when the oxide is irradiated with an electron and when a cumulative electron dose of the electron is less than or equal to 3.6×10 8 e − /nm 2 .
14. A semiconductor device comprising a transistor,
wherein the transistor comprises a first oxide, a second oxide, a first conductor, a second conductor, a third conductor, a first insulator, a second insulator, and a third insulator,
wherein the first oxide comprises a first region, a second region, and a third region in contact with the first region and the second region,
wherein the first region overlaps with the first conductor,
wherein the second region overlaps with the second conductor,
wherein the third region comprises a region overlapping with the third conductor with the first insulator and the second oxide positioned therebetween,
wherein the second insulator overlaps with the first conductor and the second conductor with the third insulator positioned therebetween and comprises an opening that exposes a side surface of the first conductor, a side surface of the second conductor, and the third region,
wherein the third conductor is placed in the opening with the third insulator, the second oxide, and the first insulator positioned therebetween,
wherein the first oxide comprises a plurality of metal elements and nitrogen,
wherein the plurality of metal elements are indium, an element M, and zinc,
wherein the element M is aluminum, gallium, yttrium, or tin, and
wherein the nitrogen is taken into an oxygen vacancy or bonded to an atom of one of the plurality of metal elements.
15. The semiconductor device according to claim 14 ,
wherein the first oxide comprises cerium.
16. The semiconductor device according to claim 14 ,
wherein a carrier concentration of the first oxide is lower than 5×10 17 cm −3 .
17. A semiconductor device comprising a transistor,
wherein the transistor comprises a first oxide, a second oxide, a third oxide, a fourth oxide, a first conductor, a second conductor, a third conductor, a first insulator, and a second insulator,
wherein the first oxide comprises a first region, a second region, and a third region in contact with the first region and the second region,
wherein the first region overlaps with the first conductor with the third oxide positioned therebetween,
wherein the second region overlaps with the second conductor with the fourth oxide positioned therebetween,
wherein the third region comprises a region overlapping with the third conductor with the first insulator and the second oxide positioned therebetween,
wherein the second insulator comprises an opening that exposes the third region,
wherein a side surface of the opening and a side surface of the first conductor or the second conductor are on one plane,
wherein the third conductor is placed in the opening with the second oxide and the first insulator positioned therebetween,
wherein the first oxide comprises a plurality of metal elements and nitrogen,
wherein the plurality of metal elements are indium, an element M, and zinc,
wherein the element M is aluminum, gallium, yttrium, or tin, and
wherein the nitrogen is taken into an oxygen vacancy or bonded to an atom of one of the plurality of metal elements.
18. The semiconductor device according to claim 17 ,
wherein the third oxide and the fourth oxide have a higher cerium content than the first oxide.
19. A semiconductor device comprising a transistor,
wherein the transistor comprises a first oxide, a second oxide, a third oxide, a fourth oxide, a first conductor, a second conductor, a third conductor, a first insulator, a second insulator, and a third insulator,
wherein the first oxide comprises a first region, a second region, and a third region in contact with the first region and the second region,
wherein the first region overlaps with the first conductor with the third oxide positioned therebetween,
wherein the second region overlaps with the second conductor with the fourth oxide positioned therebetween,
wherein the third region comprises a region overlapping with the third conductor with the first insulator and the second oxide positioned therebetween,
wherein the second insulator overlaps with the first conductor and the second conductor with the third insulator positioned therebetween and comprises an opening that exposes a side surface of the first conductor, a side surface of the second conductor, and the third region,
wherein the third conductor is placed in the opening with the third insulator, the second oxide, and the first insulator positioned therebetween,
wherein the first oxide comprises a plurality of metal elements and nitrogen,
wherein the plurality of metal elements are indium, an element M, and zinc,
wherein the element M is aluminum, gallium, yttrium, or tin, and
wherein the nitrogen is taken into an oxygen vacancy or bonded to an atom of one of the plurality of metal elements.
20. The semiconductor device according to claim 19 ,
wherein the third oxide and the fourth oxide have a higher cerium content than the first oxide.