Light-emitting unit and method for manufacturing the same

1. A light-emitting unit, comprising a first semiconductor layer, a light-emitting layer and a second semiconductor layer distributed in a stacking manner, wherein,

the first semiconductor layer is in contact with a part of a bottom surface and a part of a side of the light-emitting layer, the second semiconductor layer is in contact with a part of a top surface and a part of a side of the light-emitting layer, and both the top surface and the bottom surface of the light-emitting layer are flat surfaces,

the first semiconductor layer is insulated from the second semiconductor layer, and

one of the first semiconductor layer and the second semiconductor layer is an N-type semiconductor layer and the other is a P-type semiconductor layer; and

wherein

the light-emitting unit further comprises a first electrode and a second electrode,

the first electrode is electrically connected with the first semiconductor layer, and an orthographic projection of the light-emitting layer on the first semiconductor layer is staggered from an orthographic projection of the first electrode on the first semiconductor layer; and

the second electrode is electrically connected with the second semiconductor layer, and the orthographic projection of the light-emitting layer on the first semiconductor layer is staggered from an orthographic projection of the second electrode on the first semiconductor layer.

2. The light-emitting unit according to claim 1 , wherein

the second semiconductor layer at least covers a part of the top surface and the part of the side of the light-emitting layer, and the top surface of the light-emitting layer is a surface, which is away from the first semiconductor layer, of two layer surfaces of the light-emitting layer.

3. The light-emitting unit according to claim 1 , wherein

the second semiconductor layer covers all the top surface and all the side of the light-emitting layer.

4. The light-emitting unit according to claim 1 , wherein

the first semiconductor layer has a first convex structure, and the light-emitting layer at least covers a part of a top surface and a part of a side of the first convex structure.

5. The light-emitting unit according to claim 1 , wherein

the side of the light-emitting layer is inclined with respect to a bottom surface of the first semiconductor layer; or,

the side of the light-emitting layer is vertical with respect to a bottom surface of the first semiconductor layer.

6. The light-emitting unit according to claim 1 , wherein

an orthographic projection of the top surface of the light-emitting layer on the first semiconductor layer is located within an orthographic projection of the light-emitting layer on the first semiconductor layer.

7. The light-emitting unit according to claim 1 , wherein

a light-emitting surface of the second semiconductor layer has at least one second convex structure.

8. The light-emitting unit according to claim 7 , wherein

the light-emitting surface of the second semiconductor layer has a plurality of the second convex structures, and the plurality of the second convex structures are evenly distributed.

9. The light-emitting unit according to claim 1 , wherein

the first semiconductor layer comprises a first light-emitting drive portion and a first extension portion, and an orthographic projection of the light-emitting layer on the first semiconductor layer coincides with the first light-emitting drive portion and is staggered from the first extension portion, and the first electrode is located on the first extension portion and electrically connected with the first extension portion; and

the second semiconductor layer comprises a second light-emitting drive portion and a second extension portion, and the orthographic projection of the light-emitting layer on the first semiconductor layer is located within an orthographic projection of the second light-emitting drive portion on the first semiconductor layer, the orthographic projection of the light-emitting layer on the first semiconductor layer is staggered from an orthographic projection of the second extension portion on the first semiconductor layer, and the second electrode is located on the second extension portion and electrically connected with the second extension portion.

10. The light-emitting unit according to claim 1 , wherein

the light-emitting unit further comprises a refractive layer, and the refractive layer is located on one side, which is away from the first semiconductor layer, of the second semiconductor layer.

11. The light-emitting unit according to claim 10 , wherein

the difference between a refractive index of the second semiconductor layer and a refractive index of the refractive layer is less than a preset threshold, and the light transmittance of the refractive layer is greater than that of the second semiconductor layer; or,

the refractive index of the refractive layer is smaller than that of the second semiconductor layer, and the refractive index of the refractive layer is greater than that of air.

12. The light-emitting unit according to claim 10 , wherein

a light-emitting surface of the refractive layer has at least one third convex structure, or

a light-emitting surface of the refractive layer has a plurality of third convex structures, and the plurality of third convex structures are evenly distributed.

13. The light-emitting unit according to claim 1 , wherein

the light-emitting unit comprises a micro LED (light-emitting diode) device.

14. A method for manufacturing a light-emitting unit, comprising:

forming a first semiconductor layer;

forming a light-emitting layer on one side of the first semiconductor layer; and

forming a second semiconductor layer on one side, which is away from the first semiconductor layer, of the light-emitting layer; and

wherein the first semiconductor layer is in contact with a part of a bottom surface and a part of a side of the light-emitting layer, the second semiconductor layer is in contact with a part of a top surface and a part of a side of the light-emitting layer, and both the top surface and the bottom surface of the light-emitting layer are flat surfaces, the first semiconductor layer is insulated from the second semiconductor layer, and one of the first semiconductor layer and the second semiconductor layer is an N-type semiconductor layer and the other is a P-type semiconductor layer; and

wherein after forming the first semiconductor layer, the method further comprises:

forming a first electrode on one side of the first semiconductor layer; and

after forming a second semiconductor layer on one side, which is away from the first semiconductor layer, of the light-emitting layer, the method further comprises:

forming a second electrode on one side, which is away from the first semiconductor layer, of the second semiconductor layer; and

wherein,

the first electrode is electrically connected with the first semiconductor layer, and an orthographic projection of the light-emitting layer on the first semiconductor layer is staggered from an orthographic projection of the first electrode on the first semiconductor layer; and

the second electrode is electrically connected with the second semiconductor layer, and the orthographic projection of the light-emitting layer on the first semiconductor layer is staggered from an orthographic projection of the second electrode on the first semiconductor layer.

15. The method according to claim 14 , wherein

the forming a first semiconductor layer comprises:

forming a first semiconductor thin film layer; and

patterning the first semiconductor thin film layer to obtain the first semiconductor layer, wherein one surface of the first semiconductor layer has a first convex structure; and

the forming the light-emitting layer on one side of the first semiconductor layer comprises:

forming a light-emitting thin film layer on one side, which has the first convex structure, of the first semiconductor layer; and

patterning the light-emitting thin film layer to obtain the light-emitting layer, wherein the light-emitting layer at least covers a part of a top surface and a part of side of the first convex structure.

16. The method according to claim 15 , wherein

the forming the second semiconductor layer on one side, which is away from the first semiconductor layer, of the light-emitting layer comprises:

forming a second semiconductor thin film layer on one side, which is away from the first semiconductor layer, of the light-emitting layer; and

patterning the second semiconductor thin film layer to obtain the second semiconductor layer, wherein a light-emitting surface of the second semiconductor layer has at least one second convex structure.

17. The method according to claim 14 , wherein

after forming the second semiconductor layer on one side, which is away from the first semiconductor layer, of the second semiconductor layer, the method further comprises:

forming a refractive layer on one side, which is away from the first semiconductor layer, of the second semiconductor layer.

18. The method according to claim 17 , wherein

the forming the refractive layer on one side, which is away from the first semiconductor layer, of the second semiconductor layer comprises:

forming a refractive thin film layer on one side, which is away from the first semiconductor layer, of the second semiconductor layer; and

patterning the refractive film layer to obtain the refractive layer, wherein a light-emitting surface of the refractive layer has at least one third convex structure.