Charged polaron-polaritons in an organic semiconductor microcavity

1. A method of generating a light-matter hybrid species of charged polaritons at room temperature, the method comprising the steps of:

providing an organic semiconductor microcavity, the organic semiconductor microcavity including a doped organic semiconductor sandwiched in a microcavity capable of generating an optical resonance, the doped organic semiconductor being a hole/electron transport material having a polaron absorption coefficient exceeding 10 2 cm −1 and capable of generating a polaron optical transition with a linewidth smaller than a predetermined threshold, the optical resonance of the microcavity having a resonance frequency matched with the polaron optical transition; and

coupling light to the polaron optical transition in the organic semiconductor microcavity thereby forming polaron-polaritons, the polaron-polaritons being charge-carrying polaritons.

2. The method according to claim 1 , wherein the hole/electron transport material has a binding energy high enough such that the polaron optical transition is observed at room temperature.

3. The method according to claim 1 , wherein the organic semiconductor is selected from 4,4′-cyclohexylidenebis[N,N-bis(4-methylphenyl)benzenamine](TAPC), linear polyacenes, rubrene, perylene, and N,N′-Bis(3-methylphenyl)-N,N′-diphenylbenzidine (TPD).

4. The method according to claim 1 , wherein the microcavity is a Fabry-Perot cavity.

5. The method according to claim 1 , the step of fabricating an organic semiconductor microcavity comprises p-doping the organic semiconductor by co-evaporating the organic semiconductor with a concentration of dopants including metals, metal oxides, or molecular dopants.

6. The method according to claim 5 , wherein the dopants includes MoO 3 , WO 3 or F4-TCNQ (2,3,5,6-Tetrafluoro-7,7,8,8-tetracyanoquinodimethane) for introducing positive polarons.

7. The method according to claim 5 , wherein the dopants includes alkali metals or Rb 2 CO 3 molecules introducing negative polarons.

8. The method according to claim 5 , the step of fabricating the organic semiconductor microcavity comprises p-doping the TAPC by co-evaporating the TAPC with a concentration of MoO 3 forming a MoO 3 :TAPC film, the MoO 3 :TAPC film sandwiched between the microcavity according to a structure: glass substrate/Ag (100 nm)/MoO 3 :TAPC/Ag (17 nm).

9. The method according to claim 1 , wherein the polaron-polaritons are positively charged.

10. The method according to claim 1 , wherein the polaron-polaritons are negatively charged.

11. The method according to claim 8 , wherein the TAPC + polaron density in 30 wt % MoO 3 doped organic semiconductor film is of an order of 10 20 cm −3 .

12. The method according to claim 8 , wherein the thickness of MoO 3 :TAPC film ranges from 175 nm for 10 wt % MoO 3 to 155 nm for 30 wt % MoO 3 .

13. A method of controlling a direction of light beam, the method comprising steps of:

providing an organic semiconductor microcavity with a microcavity sandwiching a doped organic semiconductor active layer, the organic semiconductor microcavity having a polaron-polariton mode and two electric contacts;

applying an electric field between the two electric contacts generating an electric current flowing between the two electric contacts causing a drift of the polarons;

directing a light beam having a wavelength at an incident angle into the organic semiconductor microcavity, resulting in an optical resonance with the polaron-polariton mode, gaining an additional in-plane momentum component from the drift of the polarons, resulting in an angular deviation of the reflected light beam; and

controlling the direction of the reflected light by controlling magnitude and direction of the current.

14. A method of generating an electric current using a doped organic semiconductor microcavity, comprising the steps of:

providing an organic semiconductor microcavity with a microcavity sandwiching a doped organic semiconductor active layer, the organic semiconductor microcavity having a polaron-polariton mode and two electric contacts; and

directing a light beam at an incident angle into the organic semiconductor microcavity in the polaron-polariton mode, thereby generating an electric current flowing between the two contacts.

15. An organic semiconductor microcavity, comprising:

a doped organic semiconductor active layer sandwiched/embedded in a microcavity, the microcavity capable of generating an optical resonance, the doped organic semiconductor being a hole/electron transport material having a polaron absorption coefficient exceeding 10 2 cm −1 and capable of generating a polaron optical transition with a linewidth smaller than a predetermined threshold.

16. The organic semiconductor microcavity according to claim 15 , wherein the microcavity is a Fabry-Perot cavity.

17. The organic semiconductor microcavity according to claim 15 , wherein the microcavity is semi-transparent.

18. The organic semiconductor microcavity according to claim 15 , wherein the hole/electron transport material has a binding energy high enough such that the polaron optical transition is observed at room temperature.

19. A polariton voltaic device, comprising:

an organic semiconductor microcavity according to claim 15 , wherein the microcavity is wedged with a thickness of the active layer varies from one side to the other.

20. A method of creating a light-matter hybrid species of charged polaritons by electrostatic gating in an organic semiconductor at room temperature, the method comprising:

providing an organic thin film transistor with a metal gate that supports surface plasmon polaritons (SPP) or other tightly confined optical modes;

applying negative/positive gate voltage to the metal gate thereby accumulating a large hole/electron density in the channel of the device; and

generating charged polaron polaritons through the interaction between the holes/electrons and the SPP.