IP Library › Granted Patent US 11,296,073
Granted Patent B2
US 11,296,073 · App. 16/765,416 · Granted Apr 5, 2022

Semiconductor device

Inventors: Yuki Hata (Tokyo, JP); Akira Yamamoto (Fukuoka, JP)
Assignee: Mitsubishi Electric Corporation
H01L27/0288H01L27/088
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Quick Facts
Patent No.
US 11,296,073
App. No.
16/765,416
Granted
Apr 5, 2022
Kind
B2
Abstract

An object is to provide a semiconductor device that can prevent increase in the package size and detect a current with high precision by suppressing a current induced by magnetic flux. A semiconductor device 1 is connectable to a control board 100 detecting a current flowing through an IGBT 3 included in the semiconductor device 1 and functioning as a semiconductor element. The semiconductor device 1 includes an insulating substrate, the IGBT 3 , and a sense resistor 4 . The IGBT 3 is disposed on the insulating substrate 2 , and includes a sense electrode and an emitter electrode. The sense resistor 4 is disposed on the insulating substrate 2 , and has one end connected to the sense electrode and the other end connected to the emitter electrode. The control board 100 detects a potential difference between both ends of the sense resistor 4 to detect the current flowing through the IGBT 3.

Claims (18)

1. A semiconductor device connectable to a control board that detects a current flowing through a semiconductor element included in the semiconductor device, the semiconductor device comprising:

an insulating substrate;

the semiconductor element disposed on the insulating substrate and including a sense electrode and an emitter electrode; and

a sense resistor disposed on the insulating substrate without another substrate interposed therebetween and having one end connected to the sense electrode and the other end connected to the emitter electrode, wherein

the control board detects a potential difference between both of the ends of the sense resistor to detect the current flowing through the semiconductor element.

2. A semiconductor device connectable to a control board that detects a current flowing through a semiconductor element included in the semiconductor device, the semiconductor device comprising:

an insulating substrate;

the semiconductor element disposed on the insulating substrate and including a sense electrode and an emitter electrode; and

a sense resistor disposed on the insulating substrate and having one end connected to the sense electrode and the other end connected to the emitter electrode, wherein

the control board detects a potential difference between both of the ends of the sense resistor to detect the current flowing through the semiconductor element,

the one end of the sense resistor is directly connected to the sense electrode, and

the other end of the sense resistor is directly connected to the emitter electrode.

3. The semiconductor device according to claim 1 , wherein

the one end of the sense resistor is connected to the sense electrode through a first wire,

the other end of the sense resistor is connected to the emitter electrode through a second wire, and

the first wire and the second wire cross each other.

4. The semiconductor device according to claim 1 , wherein

the semiconductor element contains a wide bandgap material.

Assignments (1)
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded May 19, 2020
From: HATA, YUKI; YAMAMOTO, AKIRA
To: MITSUBISHI ELECTRIC CORPORATION
Reel/Frame 052704/0233 →
Continuity (1)
Related Publication 20200335492A1 · Oct 22, 2020