Composition for depositing silicon-containing thin film and method for producing silicon-containing thin film using the same

1. A composition for depositing a silicon-containing thin film containing a trisilylamine compound represented by Chemical Formula 1 below:

2. A method for producing a silicon-containing thin film, comprising:

supplying a trisilylamine compound represented by Chemical Formula 1 below to a chamber in which a substrate to be deposited is placed:

3. The method of claim 2 , wherein a temperature of the substrate to be deposited is less than 100° C.

4. The method of claim 3 , wherein the temperature of the substrate to be deposited is 95° C. or less.

5. The method of claim 3 , wherein the silicon-containing thin film is a silicon nitride film, and a deposition rate of the silicon-containing thin film is 8 Å/min or more.

6. The method of claim 3 , wherein the silicon-containing thin film is a silicon oxide film, and a deposition rate of the silicon-containing thin film is 70 Å/min or more.

7. The method of claim 2 , wherein before, during, and/or after the supplying of the trisilylamine compound, any one or two or more gases are supplied, the gases being selected from oxygen (O 2 ), ozone (O 3 ), distilled water (H 2 O), hydrogen peroxide (H 2 O 2 ), nitrogen monoxide (NO), nitrous oxide (N 2 O), nitrogen dioxide (NO 2 ), ammonia (NH 3 ), nitrogen (N 2 ), hydrazine (N 2 H 4 ), hydrazine derivatives, diamines, carbon monoxide (CO), carbon dioxide (CO 2 ), C1-C12 saturated or unsaturated hydrocarbons, hydrogen, argon, and helium.

8. The method of claim 2 , further comprising:

a) heating and maintaining the substrate to be deposited which is placed in the chamber to a deposition temperature;

b) contacting the substrate to be deposited with the trisilylamine compound and adsorbing the trisilylamine compound onto the substrate to be deposited; and

c) injecting a reactive gas into the substrate to be deposited on which the trisilylamine compound is adsorbed.

9. The method of claim 8 , wherein the silicon-containing thin film is a silicon nitride film, and when the steps a) to c) are performed in one cycle, a deposition rate of the silicon nitride film per cycle is 0.65 Å/cycle or more.

10. The method of claim 8 , wherein the silicon-containing thin film is a silicon oxide film, and when the steps a) to c) are performed in one cycle, a deposition rate of the silicon oxide film per cycle is 2.5 Å/cycle or more.

11. The method of claim 8 , wherein the reactive gas is selected from an oxygen-containing gas, a nitrogen-containing gas, a carbon-containing gas, an inert gas, or a mixed gas thereof, and is a plasma-activated gas.

12. The method of claim 2 , wherein the silicon-containing thin film is one or two or more selected from a silicon oxide thin film, a silicon oxycarbide thin film, a silicon carbonitride thin film, a silicon nitride thin film, a silicon oxynitride thin film, a silicon oxycarbonitride thin film, and a silicon carbide thin film.

13. A silicon-containing thin film produced by supplying a trisilylamine compound represented by Chemical Formula 1 to a chamber in which a substrate to be deposited is placed:

14. The composition of claim 1 , wherein the silicon-containing thin film is one or two or more selected from a silicon oxide thin film, a silicon oxycarbide thin film, a silicon carbonitride thin film, a silicon nitride thin film, a silicon oxynitride thin film, a silicon oxycarbonitride thin film, and a silicon carbide thin film.