Semiconductor device and method for manufacturing the semiconductor device
A semiconductor device having a high on-state current is provided. The semiconductor device includes a first oxide; a first conductor and a second conductor provided over the first oxide to be separated from each other; and a second oxide provided over the first oxide and between the first conductor and the second conductor. Each of the first oxide and the second oxide has crystallinity, the first oxide includes a region where a c-axis is aligned substantially perpendicularly to a top surface of the first oxide, and the second oxide includes a region where the c-axis is aligned substantially perpendicularly to the top surface of the first oxide, a region where the c-axis is aligned substantially perpendicularly to a side surface of the first conductor, and a region where the c-axis is aligned substantially perpendicularly to a side surface of the second conductor.
1. A semiconductor device comprising:
a first oxide;
a first conductor and a second conductor over the first oxide;
a first insulator over the first conductor and the second conductor;
a third conductor in an opening of the first insulator
a second oxide between the third conductor and the first insulator and in the opening of the first insulator; and
a second insulator between the third conductor and the second oxide and in the opening of the first insulator,
wherein each of the first oxide and the second oxide has crystallinity,
wherein the first oxide includes a region where a c-axis is aligned substantially perpendicularly to a top surface of the first oxide, and
wherein the second oxide includes a region where the c-axis is aligned substantially perpendicularly to the top surface of the first oxide, a region where the c-axis is aligned substantially perpendicularly to a side surface of the first conductor, and a region where the c-axis is aligned substantially perpendicularly to a side surface of the second conductor.
2. The semiconductor device according to claim 1 , further comprising a third insulator over and in contact with the first conductor and the second conductor,
wherein the third insulator has a lower oxygen permeability than the first insulator.
3. The semiconductor device according to claim 1 , wherein an angle formed by the side surface of the first conductor and a bottom surface of the first conductor is greater than or equal to 10° and less than or equal to 80°, and
wherein an angle formed by the side surface of the second conductor and a bottom surface of the second conductor is greater than or equal to 10° and less than or equal to 80°.
4. The semiconductor device according to claim 1 , wherein each of the first oxide and the second oxide contains In, an element M, and Zn, and
wherein the element M is Al, Ga, Y, or Sn.
5. The semiconductor device according to claim 4 , wherein an atomic ratio of In to the element Min the first oxide is higher than an atomic ratio of In to the element M in the second oxide.
6. The semiconductor device according to claim 1 , wherein the c-axis in the first oxide aligned substantially perpendicularly to the top surface of the first oxide and the c-axis in the second oxide aligned substantially perpendicularly to the top surface of the first oxide are substantially continuous.
7. The semiconductor device according to claim 1 , further comprising a third oxide under the first oxide.
8. The semiconductor device according to claim 1 ,
wherein energy of a conduction band minimum of the second oxide is higher than energy of a conduction band minimum of the first oxide.
9. The semiconductor device according to claim 1 ,
wherein the first conductor functions as one of a source electrode and a drain electrode,
wherein the second conductor function as the other of source electrode and the drain electrode,
wherein the third conductor functions as a gate electrode, and
wherein the second insulator functions as a gate insulator.