Power semiconductor device and manufacturing method of the same
An object is to improve the productivity of a power semiconductor device. A power semiconductor device according to the invention includes a circuit portion having a conductor for transmitting a current and a power semiconductor element, a first base portion and a second base portion facing each other with the circuit portion interposed therebetween, and a transfer mold member which is in contact with the conductor and the power semiconductor element and is filled in a space between the first base portion and the second base portion. The first base portion includes a first flat portion that is connected to a peripheral edge of the first base portion, and a first bent portion that connects the first flat portion and another portion of the first base portion and is plastically deformed. The transfer mold member is integrally configured in contact with the first flat portion.
1. A power semiconductor device, comprising:
a circuit portion that includes a conductor for transmitting a current and a power semiconductor element;
a first base portion and a second base portion that face each other with the circuit portion interposed between the first base portion and the second base portion; and
a transfer mold member that is in contact with the conductor and the power semiconductor element and is filled in a space between the first base portion and the second base portion,
wherein the first base portion includes a first flat portion connected to a peripheral edge of the first base portion, and a first bent portion plastically deformed by connecting the first flat portion and another portion of the first base portion,
the transfer mold member is integrally formed in a state of being in contact with the first flat portion, and
the second base portion includes a second flat portion connected to a peripheral edge of the second base portion, and a second bent portion that connects the second flat portion and another portion of the second base portion and is plastically deformed.
2. The power semiconductor device according to claim 1 , wherein the transfer mold member covers an end of the second flat portion.
3. The power semiconductor device according to claim 1 , wherein the transfer mold member covers an end of the first flat portion.
4. The power semiconductor device according to claim 1 , comprising
a flow path member that is connected to the first base portion by metal-melt bonding and forms a flow path,
wherein the first base portion includes a fin base on which a fin is formed, and an intermediate portion provided between the fin base and the bent portion, and
the flow path member is connected in the intermediate portion.
5. The power semiconductor device according to claim 4 , wherein
a thickness of the intermediate portion is formed to be smaller than a thickness of the fin base, and
a surface of the flow path member on a flow path side is flush with a surface of the fin base on which the fin is formed.
6. The power semiconductor device according to claim 1 , wherein a resin thin film is provided between the circuit portion and the transfer mold member, between the first base portion and the transfer mold member, and between the second base portion and the transfer mold member.