Frequency sensor

1. A frequency sensor, comprising:

magnetoresistive nano-oscillator including a magnetic heterostructure of at least a magnetic free layer, a magnetic reference layer and a non-magnetic intermediate layer arranged between the magnetic free layer and the magnetic reference layer;

a coupling arrangement arranged to couple an incoming signal to at least one magnetic mode of said magnetic free layer, and

a frequency estimator configured to:

perform a plurality of voltage measurements across said magnetoresistive nano-oscillator over time;

calculate, based on said plurality of voltage measurements, a time averaged voltage across said magnetoresistive nano-oscillator;

estimate, over a finite range of frequencies, a frequency of the incoming signal as a one-to-one function of the calculated time averaged voltage, and

output a signal representative of said estimated frequency.

2. The frequency sensor of claim 1 ,

wherein the magnetoresistive nano-oscillator is a magnetic tunnel junction, MTJ;

wherein the magnetic free layer is configurable in a state having at least one magnetic vortex core;

wherein the at least one magnetic mode includes a gyrotropic mode of the magnetic vortex core, and

wherein the coupling arrangement comprises at least one field line adjacent to the MTJ for passing the incoming signal through as current to generate a magnetic field, said magnetic field being usable to excite said at least one gyrotropic mode of the magnetic vortex core using the incoming signal.

3. The frequency sensor of claim 2 , wherein the frequency estimator is configured to perform the voltage measurements over a time interval spanning several oscillations of said at least one magnetic vortex core.

4. The frequency sensor of claim 2 , wherein the at least one magnetic mode includes an azimuthal spin wave mode, and wherein the gyrotropic mode of the magnetic vortex core is excited indirectly through said azimuthal spin wave mode.

5. The frequency sensor of claim 1 ,

wherein the magnetoresistive nano-oscillator is a magnetic tunnel junction, MTJ, and

wherein the coupling arrangement comprises at least one conductor for passing the incoming signal as current through the MTJ to modulate a magnetization in the magnetic free layer.

6. The frequency sensor of claim 5 , wherein a magnetization of the magnetic free layer is tilted out of the plane of the MTJ.

7. The frequency sensor of claim 5 , wherein the frequency estimator is configured to perform the voltage measurements over a time interval spanning several periods of the incoming signal.

8. The frequency sensor of claim 3 , wherein the frequency estimator is configured to determine a required length of the time interval based on a desired resolution of the determined frequency of the incoming signal.

9. The frequency sensor of claim 1 , wherein the frequency estimator is configured to measure the voltage across said magnetoresistive nano-oscillator as a rectified voltage.

10. The frequency sensor of claim 1 , further comprising a biasing arrangement for providing a biasing DC current through the magnetoresistive nano-oscillator.

11. The frequency sensor of claim 1 , wherein the magnetoresistive nano-oscillator is provided in the form of a nanopillar.

12. A method of estimating a frequency of an incoming signal, comprising:

coupling the incoming signal to at least one magnetic mode of a free magnetic layer, the free magnetic layer forming part of a magnetoresistive nano-oscillator including a magnetic heterostructure of at least the magnetic free layer, a magnetic reference layer and a non-magnetic intermediate layer arranged between the magnetic free layer and the magnetic reference layer;

performing a plurality of voltage measurements across the magnetoresistive nano-oscillator over time;

calculating, based on the plurality of voltage measurements, a time averaged voltage across the magnetoresistive nano-oscillator, and

estimating, over a finite range of frequencies, a frequency of the incoming signal as a one-to-one function of the calculated time averaged voltage.

13. The method of claim 12 , wherein the magnetoresistive nano-oscillator is a magnetic tunnel junction, MTJ, and wherein the method comprises:

configuring the magnetic free layer in a state having at least one magnetic vortex core, such that the at least one magnetic mode includes a gyrotropic mode of the magnetic vortex core, and

passing the incoming signal as a current through at least one field line adjacent to the MTJ to generate a magnetic field, thereby coupling the incoming signal to the at least one magnetic mode.

14. The method of claim 12 , wherein the magnetoresistive nano-oscillator is a magnetic tunnel junction, MTJ, and wherein the method comprises:

coupling the incoming signal to the at least one magnetic mode by passing the incoming signal as a current through the MTJ.

15. The method of claim 14 , further comprising tilting a magnetization of the magnetic free layer out of the plane of the MTJ.